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Alexander Grill
Alexander Grill
Researcher, imec
Verified email at imec.be
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Cited by
Year
The role of charge trapping in MoS2/SiO2 and MoS2/hBN field-effect transistors
YY Illarionov, G Rzepa, M Waltl, T Knobloch, A Grill, MM Furchi, T Mueller, ...
2D Materials 3 (3), 035004, 2016
2062016
Physical model of low-temperature to cryogenic threshold voltage in MOSFETs
A Beckers, F Jazaeri, A Grill, S Narasimhamoorthy, B Parvais, C Enz
IEEE Journal of the Electron Devices Society 8, 780-788, 2020
722020
Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
602018
Reliability and variability of advanced CMOS devices at cryogenic temperatures
A Grill, E Bury, J Michl, S Tyaginov, D Linten, T Grasser, B Parvais, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
362020
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
332017
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
312017
Superior NBTI in High- SiGe Transistors–Part I: Experimental
M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ...
IEEE Transactions on Electron Devices 64 (5), 2092-2098, 2017
312017
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities
M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ...
IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020
222020
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory
M Jech, B Ullmann, G Rzepa, S Tyaginov, A Grill, M Waltl, D Jabs, ...
IEEE Transactions on Electron Devices 66 (1), 241-248, 2018
222018
Millikelvin temperature cryo-CMOS multiplexer for scalable quantum device characterisation
A Potočnik, S Brebels, J Verjauw, R Acharya, A Grill, D Wan, M Mongillo, ...
Quantum Science and Technology 7 (1), 015004, 2021
182021
Superior NBTI in high-k SiGe transistors–part II: Theory
M Waltl, G Rzepa, A Grill, W Goes, J Franco, B Kaczer, L Witters, J Mitard, ...
IEEE Transactions on Electron Devices 64 (5), 2099-2105, 2017
152017
The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects
B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017
152017
Characterization of interface defects with distributed activation energies in GaN-based MIS-HEMTs
R Stradiotto, G Pobegen, C Ostermaier, M Waltl, A Grill, T Grasser
IEEE Transactions on Electron Devices 64 (3), 1045-1052, 2017
142017
A compact physics analytical model for hot-carrier degradation
S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
132020
Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures
R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi
IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023
122023
Hot-electron-induced punch-through (HEIP) effect in p-MOSFET enhanced by mechanical stress
K Lee, B Kaczer, A Kruv, M Gonzalez, R Degraeve, S Tyaginov, A Grill, ...
IEEE Electron Device Letters 42 (10), 1424-1427, 2021
122021
Nanoscale evidence for the superior reliability of SiGe high-k pMOSFETs
M Waltl, A Grill, G Rzepa, W Goes, J Franco, B Kaczer, J Mitard, T Grasser
2016 IEEE International Reliability Physics Symposium (IRPS), XT-02-1-XT-02-6, 2016
122016
Comphy v3. 0—a compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices
D Waldhoer, C Schleich, J Michl, A Grill, D Claes, A Karl, T Knobloch, ...
Microelectronics Reliability 146, 115004, 2023
112023
Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
A Grill, B Stampfer, M Waltl, KS Im, JH Lee, C Ostermaier, H Ceric, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 3B-5.1-3B-5.5, 2017
112017
Evidence of tunneling driven random telegraph noise in cryo-CMOS
J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ...
2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021
102021
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