Amit K. Tiwari
Title
Cited by
Cited by
Year
Calculated electron affinity and stability of halogen-terminated diamond
AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ...
Physical Review B 84 (24), 245305, 2011
582011
Electronic and structural properties of diamond (001) surfaces terminated by selected transition metals
AK Tiwari, JP Goss, P Briddon, NG Wright, AB Horsfall
Physical Review B 86 (15), 155301, 2012
222012
First-principles studies of the effect of (001) surface terminations on the electronic properties of the negatively charged nitrogen-vacancy defect in diamond
H Pinto, R Jones, DW Palmer, JP Goss, AK Tiwari, PR Briddon, NG Wright, ...
Physical Review B 86 (4), 045313, 2012
222012
Unexpected change in the electron affinity of diamond caused by the ultra-thin transition metal oxide films
AK Tiwari, JP Goss, PR Briddon, AB Horsfall, NG Wright, R Jones, ...
EPL (Europhysics Letters) 108 (4), 46005, 2014
152014
Surface-state dependent optical properties of OH-, F-, and H-terminated 4H-SiC quantum dots
M Rashid, AK Tiwari, JP Goss, MJ Rayson, PR Briddon, AB Horsfall
Physical Chemistry Chemical Physics 18 (31), 21676-21685, 2016
102016
Effect of different surface coverages of transition metals on the electronic and structural properties of diamond
AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, MJ Rayson
physica status solidi (a) 209 (9), 1697-1702, 2012
102012
Bromine functionalisation of diamond: An ab initio study
AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, MJ Rayson
physica status solidi (a) 209 (9), 1703-1708, 2012
92012
Thermodynamic stability and electronic properties of F‐and Cl‐terminated diamond
AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ...
physica status solidi (a) 209 (9), 1709-1714, 2012
82012
>10kV 4H-SiC n-IGBTs for Elevated Temperature Environments
S Perkins, M Antoniou, AK Tiwari, A Arvanitopoulos, T Trajkovic, F Udrea, ...
The 14th International Seminar on Power Semiconductors (ISPS 2018) - Prague …, 2018
52018
Operation of ultra-high voltage (> 10kV) SiC IGBTs at elevated temperatures: benefits & constraints
AK Tiwari, F Udrea, N Lophitis, M Antoniou
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
22019
Performance improvement of> 10kV SiC IGBTs with retrograde p-well
AK Tiwari, M Antoniou, N Lophitis, S Perkins, T Trajkovic, F Udrea
Materials Science Forum 963, 639-642, 2019
22019
Retrograde p-well for 10-kV class SiC IGBTs
AK Tiwari, M Antoniou, N Lophitis, S Perkin, T Trajkovic, F Udrea
IEEE Transactions on Electron Devices 66 (7), 3066-3072, 2019
12019
High-Mobility SiC MOSFETs Using a Thin-SiO2/Al2O3 Gate Stack
J Urresti, F Arith, K Vassilevski, AK Tiwari, S Olsen, NG Wright, AG O'Neill
Materials Science Forum 924, 494-497, 2018
12018
A Comparative Study Between X-rays and Gamma-Rays Irradiation on Electrical Characteristics of Bipolar Junction Transistors (BJTs)
FP Chee, AK Tiwari, A Alias, S Salleh, HFA Amir
Advanced Science Letters 23 (2), 1416-1421, 2017
12017
Collision Cascade and Spike Effects of X-ray Irradiation on Optoelectronic Devices.
S Salleh, HFA Amir, AK Tiwari, F CHEE
Acta Physica Polonica, A. 130 (1), 2016
12016
SiC current limiting devices for surge protection
AK Tiwari, AB Horsfall, NG Wright, P Wallace, L Mills, DT Clark, RA Young, ...
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
12015
Tuning Optoelectronic Properties of 4H-SiC QDs Using-H,-OH and-F Surface Functionalisation
M Rashid, AK Tiwari, N Wood, P Briddon, JP Goss, MJ Rayson, N Wright, ...
Materials Science Forum 821, 375-378, 2015
12015
Realization of SiC-current limiting devices for serial protection of aircraft electronics
AK Tiwari, AB Horsfall, NG Wright, DT Clark, RA Young, P Wallace, L Mills, ...
Device Research Conference (DRC) 73, 165-166, 2015
12015
Diamond-based thermo-tunnel devices for hostile environments
AK Tiwari
Newcastle Uuniversity, 2013
12013
Transient Performance of> 10kV SiC IGBT with an Optimized Retrograde p-Well
AK Tiwari, M Antoniou, T Trajkovic, T Dai, PM Gammon, F Udrea
Materials Science Forum 1004, 917-922, 2020
2020
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