Stefan Schulz
Stefan Schulz
Senior Staff Researcher, Tyndall National Institute
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα tyndall.ie
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Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
S Schulz, S Schumacher, G Czycholl
Physical Review B 73 (24), 245327, 2006
1272006
Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
S Schulz, MA Caro, C Coughlan, EP O'Reilly
Physical Review B 91, 035439, 2015
922015
Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
MA Caro, S Schulz, EP O’Reilly
Physical Review B 88 (21), 214103, 2013
832013
Theory of reduced built-in polarization field in nitride-based quantum dots
S Schulz, EP O’Reilly
Physical Review B 82 (3), 033411, 2010
752010
Tight-binding model for semiconductor nanostructures
S Schulz, G Czycholl
Physical Review B 72 (16), 165317, 2005
732005
A comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
O Marquardt, D Mourad, S Schulz, T Hickel, G Czycholl, J Neugebauer
Arxiv preprint arXiv:0811.1461, 2008
682008
Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots
N Baer, S Schulz, P Gartner, S Schumacher, G Czycholl, F Jahnke
Physical Review B 76 (7), 075310, 2007
662007
Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
S Schulz, MA Caro, EP O’Reilly, O Marquardt
Physical Review B 84 (12), 125312, 2011
612011
Optical properties of self-organized wurtzite quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
N Baer, S Schulz, S Schumacher, P Gartner, G Czycholl, F Jahnke
Applied Physics Letters 87 (23), 231114, 2005
612005
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
S Schulz, DP Tanner, EP O'Reilly, MA Caro, TL Martin, PAJ Bagot, ...
Physical Review B 92 (23), 235419, 2015
552015
The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys
Journal of Applied Physics 119 (18), 181505, 2016
542016
Polarization fields in nitride-based quantum dots grown on nonpolar substrates
S Schulz, A Berube, EP O’Reilly
Physical Review B 79 (8), 081401, 2009
492009
Electronic and optical properties of nonpolar a-plane GaN quantum wells
S Schulz, TJ Badcock, MA Moram, P Dawson, MJ Kappers, ...
Physical Review B 82 (12), 125318, 2010
462010
Composition dependent band gap and band edge bowing in AlInN: A combined theoretical and experimental study
S Schulz, MA Caro, LT Tan, PJ Parbrook, RW Martin, EP O'Reilly
Applied Physics Express 6, 121001, 2013
452013
Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure
S Schulz, S Schumacher, G Czycholl
The European Physical Journal B 64 (1), 51-60, 2008
422008
Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
MA Caro, S Schulz, EP O'Reilly
Physical Review B 91 (7), 075203, 2015
362015
Hybrid functional study of the elastic and structural properties of wurtzite and zinc-blende group-III nitrides
MA Caro, S Schulz, EP O’Reilly
Physical Review B 86 (1), 014117, 2012
362012
A generalized plane-wave formulation of k· p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
O Marquardt, S Boeck, C Freysoldt, T Hickel, S Schulz, J Neugebauer, ...
Computational materials science 95, 280-287, 2014
322014
Quantum Dot Molecules
J Wu, ZM Wang
Springer New York, 2014
322014
Built-in field control in alloyed c-plane III-N quantum dots and wells
MA Caro, S Schulz, SB Healy, EP O’Reilly
Journal of Applied Physics 109 (8), 084110, 2011
322011
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