| Silicon/insulator heteroepitaxial structures formed by vacuum deposition of CaF2 and Si H Ishiwara, T Asano Applied Physics Letters 40 (1), 66-68, 1982 | 201 | 1982 |
| In situ observation of nickel metal-induced lateral crystallization of amorphous silicon thin films M Miyasaka, K Makihira, T Asano, E Polychroniadis, J Stoemenos Applied physics letters 80 (6), 944-946, 2002 | 152 | 2002 |
| Heteroepitaxial growth of group-IIa-fluoride films on Si substrates T Asano, H Ishiwara, N Kaifu Japanese journal of applied physics 22 (10R), 1474, 1983 | 133 | 1983 |
| Epitaxial relations in group‐IIa fluoride/Si (111) heterostructures T Asano, H Ishiwara Applied Physics Letters 42 (6), 517-519, 1983 | 121 | 1983 |
| Epitaxial growth of Si films on CaF2/Si structures with thin Si layers predeposited at room temperature T Asano, H Ishiwara Journal of applied physics 55 (10), 3566-3570, 1984 | 112 | 1984 |
| An epitaxial Si/insulator/Si structure prepared by vacuum deposition of CaF2 and silicon T Asana, H Ishiwara Thin Solid Films 93 (1-2), 143-150, 1982 | 102 | 1982 |
| Effect of oxygen plasma exposure of porous spin-on-glass films E Kondoh, T Asano, A Nakashima, M Komatu Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 99 | 2000 |
| Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems T Otsuji, YM Meziani, T Nishimura, T Suemitsu, W Knap, E Sano, T Asano, ... Journal of Physics: Condensed Matter 20 (38), 384206, 2008 | 96 | 2008 |
| Ni-imprint induced solid-phase crystallization in Si1− xGex (x: 0–1) on insulator K Toko, H Kanno, A Kenjo, T Sadoh, T Asano, M Miyao Applied Physics Letters 91 (4), 2007 | 66 | 2007 |
| Reduction of the floating body effect in SOI MOSFETs by using Schottky source/drain contacts MNM Nishisaka, TAT Asano Japanese journal of applied physics 37 (3S), 1295, 1998 | 66 | 1998 |
| Field emission from ion‐milled diamond films on Si T Asano, Y Oobuchi, S Katsumata Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995 | 65 | 1995 |
| Fabrication of back-side illuminated complementary metal oxide semiconductor image sensor using compliant bump N Watanabe, I Tsunoda, T Takao, K Tanaka, T Asano Japanese journal of applied physics 49 (4S), 04DB01, 2010 | 64 | 2010 |
| Single crystalline silicide formation S Saitoh, H Ishiwara, T Asano, S Furukawa Japanese Journal of Applied Physics 20 (9), 1649, 1981 | 64 | 1981 |
| Enhanced nucleation in solid-phase crystallization of amorphous Si by imprint technology K Makihira, T Asano Applied Physics Letters 76 (25), 3774-3776, 2000 | 61 | 2000 |
| Development and characterization of a flat laminate vapor chamber K Mizuta, R Fukunaga, K Fukuda, S Nii, T Asano Applied Thermal Engineering 104, 461-471, 2016 | 58 | 2016 |
| Supramolecular hybrid of gold nanoparticles and semiconducting single-walled carbon nanotubes wrapped by a porphyrin–fluorene copolymer H Ozawa, X Yi, T Fujigaya, Y Niidome, T Asano, N Nakashima Journal of the American Chemical Society 133 (37), 14771-14777, 2011 | 58 | 2011 |
| Formation of GaAs-on-insulator structures on Si substrates by heteroepitaxial growth of CaF2 and GaAs T Asano, H Ishiwara, HC Lee, K Tsutsui, S Furukawa Japanese journal of applied physics 25 (2A), L139, 1986 | 57 | 1986 |
| Electron-beam exposure (EBE) and epitaxy of GaAs films on CaF2/Si structures HC Lee, T Asano, H Ishiwara, S Furukawa Japanese journal of applied physics 27 (9R), 1616, 1988 | 54 | 1988 |
| Fabrication of MOSFETs in Si/CaF2/Si heteroepitaxial structures T Asano, Y Kuriyama, H Ishiwara Electronics Letters 21, 386, 1985 | 54 | 1985 |
| Lithium niobate ridged waveguides with smooth vertical sidewalls fabricated by an ultra-precision cutting method R Takigawa, E Higurashi, T Kawanishi, T Asano Optics express 22 (22), 27733-27738, 2014 | 53 | 2014 |
