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Hyung-Seok Lee
Hyung-Seok Lee
Massachusetts Institute of Technology
Verified email at etri.re.kr
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Year
AlGaN/GaN high-electron-mobility transistors fabricated through a Au-Free technology
HS Lee, DS Lee, T Palacios
Electron Device Letters, IEEE 32 (5), 623-625, 2011
1642011
Electrothermal simulation and thermal performance study of GaN vertical and lateral power transistors
Y Zhang, M Sun, Z Liu, D Piedra, HS Lee, F Gao, T Fujishima, T Palacios
Electron Devices, IEEE Transactions on 60 (7), 2224-2230, 2013
1442013
3000-V 4.3-InAlN/GaN MOSHEMTs With AlGaN Back Barrier
HS Lee, D Piedra, M Sun, X Gao, S Guo, T Palacios
Electron Device Letters, IEEE 33 (7), 982-984, 2012
1352012
Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit
WE Hoke, RV Chelakara, JP Bettencourt, TE Kazior, JR LaRoche, ...
Journal of Vacuum Science & Technology B 30 (2), 02B101, 2012
1002012
Geometrical effects in high current gain 1100-V 4H-SiC BJTs
M Domeij, HS Lee, E Danielsson, CM Zetterling, M Ostling, A Schoner
Electron Device Letters, IEEE 26 (10), 743-745, 2005
762005
1200-V 5.2-mΩ· cm 2 4H-SiC BJTs with a high common-emitter current gain
HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ...
Electron Device Letters, IEEE 28 (11), 1007-1009, 2007
732007
Wafer-level heterogeneous integration of GaN HEMTs and Si (100) MOSFETs
HS Lee, K Ryu, M Sun, T Palacios
Electron Device Letters, IEEE 33 (2), 200-202, 2012
622012
Ultrathin Strained-Ge Channel P-MOSFETs With High-/Metal Gate and Sub-1-nm Equivalent Oxide Thickness
P Hashemi, W Chern, HS Lee, JT Teherani, Y Zhu, J Gonsalvez, ...
Electron Device Letters, IEEE 33 (7), 943-945, 2012
532012
Formation of low resistance ohmic contacts in GaN-based high electron mobility transistors with BCl3 surface plasma treatment
T Fujishima, S Joglekar, D Piedra, HS Lee, Y Zhang, A Uedono, ...
Applied Physics Letters 103 (8), 083508, 2013
492013
High performance mixed signal and RF circuits enabled by the direct monolithic heterogeneous integration of GaN HEMTs and Si CMOS on a silicon substrate
TE Kazior, R Chelakara, W Hoke, J Bettencourt, T Palacios, HS Lee
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011 IEEE, 1-4, 2011
492011
Fabrication of 2700-V 12-Non Ion-Implanted 4H-SiC BJTs With Common-Emitter Current Gain of 50
R Ghandi, HS Lee, M Domeij, B Buono, CM Zetterling, M Ostling
Electron Device Letters, IEEE 29 (10), 1135-1137, 2008
492008
Comparative breakdown study of mesa-and ion-implantation-isolated AlGaN/GaN high-electron-mobility transistors on Si substrate
M Sun, HS Lee, B Lu, D Piedra, T Palacios
Applied Physics Express 5 (7), 074202, 2012
452012
AlGaN/AlN/GaN High-Electron-Mobility Transistors Fabricated with Au-Free Technology
Z Liu, M Sun, HS Lee, M Heuken, T Palacios
Applied Physics Express 6 (9), 096502, 2013
412013
Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
HS Lee, M Domeij, CM Zetterling, M Ostling, F Allerstam, ...
Applied Physics Letters 92 (8), 082113-082113-3, 2008
392008
High-current-gain SiC BJTs with regrown extrinsic base and etched JTE
HS Lee, M Domeij, R Ghandi, CM Zetterling, M Ostling
Electron Devices, IEEE Transactions on 55 (8), 1894-1898, 2008
282008
Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation (vol 55, pg 1907, 2008)
HS Lee, M Domeij, CM Zetterling, M Oestling
IEEE TRANSACTIONS ON ELECTRON DEVICES 55 (9), 2531-2531, 2008
16*2008
Low-forward-voltage-drop 4H-SiC BJTs without base contact implantation
HS Lee, M Domeij, CM Zetterling, M Ostling
Electron Devices, IEEE Transactions on 55 (8), 1907-1911, 2008
162008
1200 V 4H-SiC BJTs with a common emitter current gain of 60 and low on-resistance
HS Lee, M Domeij, CM Zetterling, R Ghandi, M Östling, F Allerstam, ...
Materials Science Forum 600, 1151-1154, 2009
142009
Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
HS Lee
KTH, 2008
122008
Current gain of 4H-SiC bipolar transistors including the effect of interface states
M Domeij, E Danielsson, HS Lee, CM Zetterling, M Östling
Materials Science Forum 483, 889-892, 2005
102005
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