Mike Jennings
Mike Jennings
Associate Professor, Swansea University
Verified email at swansea.ac.uk
Title
Cited by
Cited by
Year
Field-effect mobility temperature modeling of metal-oxide-semiconductor transistors
A Pérez-Tomás, P Brosselard, P Godignon, J Millán, N Mestres, ...
Journal of applied physics 100 (11), 114508, 2006
1062006
P-type β-gallium oxide: A new perspective for power and optoelectronic devices
E Chikoidze, A Fellous, A Perez-Tomas, G Sauthier, T Tchelidze, ...
Materials Today Physics 3, 118-126, 2017
862017
Modelling the inhomogeneous SiC Schottky interface
PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ...
Journal of Applied Physics 114 (22), 223704, 2013
662013
Characterization and modeling of heterojunction diodes
A Pérez-Tomás, MR Jennings, M Davis, JA Covington, PA Mawby, ...
Journal of applied physics 102 (1), 014505, 2007
532007
Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN
A Fontserč, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Applied Physics Letters 99 (21), 213504, 2011
482011
Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC
MR Jennings, A Pérez-Tomás, M Davies, D Walker, L Zhu, P Losee, ...
Solid-state electronics 51 (5), 797-801, 2007
422007
Si∕ SiC heterojunctions fabricated by direct wafer bonding
MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ...
Electrochemical and Solid State Letters 11 (11), H306, 2008
312008
Enhanced field effect mobility on 4H-SiC by oxidation at 1500 C
SM Thomas, YK Sharma, MA Crouch, CA Fisher, A Perez-Tomas, ...
IEEE Journal of the Electron Devices Society 2 (5), 114-117, 2014
272014
High doped MBE Si p–n and n–n heterojunction diodes on 4H-SiC
A Pérez-Tomás, MR Jennings, M Davis, V Shah, T Grasby, JA Covington, ...
Microelectronics Journal 38 (12), 1233-1237, 2007
272007
Analysis of inhomogeneous Ge/SiC heterojunction diodes
PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ...
Journal of Applied Physics 106 (9), 093708, 2009
262009
Si/SiC bonded wafer: A route to carbon free on SiC
A Pérez-Tomás, M Lodzinski, OJ Guy, MR Jennings, M Placidi, J Llobet, ...
Applied Physics Letters 94 (10), 103510, 2009
262009
Impact of the oxidation temperature on the interface trap density in 4H-SiC MOS capacitors
SM Thomas, MR Jennings, YK Sharma, CA Fisher, PA Mawby
Materials Science Forum 778, 599-602, 2014
252014
Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET
A Fontserč, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ...
Microelectronic engineering 88 (10), 3140-3144, 2011
232011
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET With Reduced Self Heating
SAO Russell, A Pérez-Tomás, CF McConville, CA Fisher, DP Hamilton, ...
IEEE Journal of the Electron Devices Society 5 (4), 256-261, 2017
222017
Study of a novel Si/SiC hetero-junction MOSFET
L Chen, OJ Guy, MR Jennings, P Igic, SP Wilks, PA Mawby
Solid-state electronics 51 (5), 662-666, 2007
222007
On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts
MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ...
Materials Science Forum 778, 693-696, 2014
192014
Interface characteristics of and Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition
PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ...
Journal of Applied Physics 107 (12), 124512, 2010
192010
Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC
A Pérez-Tomás, A Fontserč, MR Jennings, PM Gammon
Materials science in semiconductor processing 16 (5), 1336-1345, 2013
182013
Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors
A Fontsere, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ...
Nanotechnology 23 (39), 395204, 2012
182012
Silicon carbide Schottky diodes and MOSFETs: solutions to performance problems
OJ Guy, M Lodzinski, A Castaing, PM Igic, A Perez-Tomas, MR Jennings, ...
2008 13th International Power Electronics and Motion Control Conference …, 2008
172008
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