Philomela Komninou
Philomela Komninou
Verified email at
Cited by
Cited by
Direct comparison of catalyst-free and catalyst-induced GaN nanowires
C Chèze, L Geelhaar, O Brandt, WM Weber, H Riechert, S Münch, ...
Nano Research 3, 528-536, 2010
Properties of GaN nanowires grown by molecular beam epitaxy
L Geelhaar, C Cheze, B Jenichen, O Brandt, C Pfüller, S Münch, ...
IEEE Journal of Selected Topics in Quantum Electronics 17 (4), 878-888, 2011
High-quality, large-area MoSe 2 and MoSe 2/Bi 2 Se 3 heterostructures on AlN (0001)/Si (111) substrates by molecular beam epitaxy
E Xenogiannopoulou, P Tsipas, KE Aretouli, D Tsoutsou, SA Giamini, ...
Nanoscale 7 (17), 7896-7905, 2015
Synthesis, characterization and thermal properties of polymer/magnetite nanocomposites
P Dallas, V Georgakilas, D Niarchos, P Komninou, T Kehagias, D Petridis
Nanotechnology 17 (8), 2046, 2006
Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy
T Kehagias, GP Dimitrakopulos, J Kioseoglou, H Kirmse, C Giesen, ...
Applied Physics Letters 95 (7), 071905, 2009
Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires
T Kehagias, GP Dimitrakopulos, P Becker, J Kioseoglou, F Furtmayr, ...
Nanotechnology 24 (43), 435702, 2013
Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy
SL Sahonta, GP Dimitrakopulos, T Kehagias, J Kioseoglou, ...
Applied Physics Letters 95 (2), 021913, 2009
A modified empirical potential for energetic calculations of planar defects in GaN
J Kioseoglou, HM Polatoglou, L Lymperakis, G Nouet, P Komninou
Computational materials science 27 (1-2), 43-49, 2003
Dislocation core investigation by geometric phase analysis and the dislocation density tensor
J Kioseoglou, GP Dimitrakopulos, P Komninou, T Karakostas, EC Aifantis
Journal of Physics D: Applied Physics 41 (3), 035408, 2008
Observation of Surface Dirac Cone in High-Quality Ultrathin Epitaxial Bi2Se3 Topological Insulator on AlN(0001) Dielectric
P Tsipas, E Xenogiannopoulou, S Kassavetis, D Tsoutsou, E Golias, ...
Acs Nano 8 (7), 6614-6619, 2014
Atomic structures and energies of partial dislocations in wurtzite GaN
J Kioseoglou, GP Dimitrakopulos, P Komninou, T Karakostas
Physical Review B 70 (3), 035309, 2004
Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN
GP Dimitrakopulos, P Komninou, J Kioseoglou, T Kehagias, ...
Physical Review B 64 (24), 245325, 2001
Nano Res. 3, 528 (2010)
C Chèze, L Geelhaar, O Brandt, W Weber, H Riechert, S Münch, ...
Understanding the role of defects in Silicon Nitride-based resistive switching memories through oxygen doping
N Vasileiadis, P Karakolis, P Mandylas, V Ioannou-Sougleridis, ...
IEEE Transactions on Nanotechnology 20, 356-364, 2021
Effect of edge threading dislocations on the electronic structure of InN
E Kalesaki, J Kioseoglou, L Lymperakis, P Komninou, T Karakostas
Applied Physics Letters 98 (7), 072103, 2011
Analysis of partial dislocations in wurtzite GaN using gradient elasticity
J Kioseoglou, GP Dimitrakopulos, P Komninou, T Karakostas, ...
physica status solidi (a) 203 (9), 2161-2166, 2006
Partial dislocations in wurtzite GaN
P Komninou, J Kioseoglou, GP Dimitrakopulos, T Kehagias, T Karakostas
physica status solidi (a) 202 (15), 2888-2899, 2005
Morphology and strain of self-assembled semipolar GaN quantum dots in AlN
GP Dimitrakopulos, E Kalesaki, J Kioseoglou, T Kehagias, A Lotsari, ...
Journal of Applied Physics 108 (10), 104304, 2010
Silver nanoparticles and graphitic carbon through thermal decomposition of a silver/acetylenedicarboxylic salt
P Dallas, AB Bourlinos, P Komninou, M Karakassides, D Niarchos
Nanoscale research letters 4, 1358-1364, 2009
Interatomic potential calculations of III (Al, In)–N planar defects with a III‐species environment approach
J Kioseoglou, P Komninou, T Karakostas
physica status solidi (b) 245 (6), 1118-1124, 2008
The system can't perform the operation now. Try again later.
Articles 1–20