ANDREAS TSORMPATZOGLOU
ANDREAS TSORMPATZOGLOU
AUTH, Greece
Verified email at auth.gr
Title
Cited by
Cited by
Year
Semi-analytical modeling of short-channel effects in Si and Ge symmetrical double-gate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, Q Rafhay, G Pananakakis, ...
IEEE Transactions on Electron devices 54 (8), 1943-1952, 2007
992007
Threshold voltage model for short-channel undoped symmetrical double-gate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo
IEEE transactions on Electron Devices 55 (9), 2512-2516, 2008
952008
Semianalytical modeling of short-channel effects in lightly doped silicon trigate MOSFETs
A Tsormpatzoglou, CA Dimitriadis, R Clerc, G Pananakakis, G Ghibaudo
IEEE transactions on electron devices 55 (10), 2623-2631, 2008
632008
A compact drain current model of short-channel cylindrical gate-all-around MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Semiconductor science and technology 24 (7), 075017, 2009
562009
Compact model of drain current in short-channel triple-gate FinFETs
N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ...
IEEE transactions on electron devices 59 (7), 1891-1898, 2012
492012
Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs
EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
IEEE transactions on Electron Devices 58 (2), 433-440, 2010
432010
Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise
EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, F Templier, ...
Journal of Applied Physics 108 (10), 106103, 2010
382010
Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Microelectronic Engineering 87 (9), 1764-1768, 2010
352010
Analytical unified threshold voltage model of short-channel FinFETs and implementation
N Fasarakis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, ...
Solid-state electronics 64 (1), 34-41, 2011
332011
Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors
A Tsormpatzoglou, NA Hastas, N Choi, F Mahmoudabadi, MK Hatalis, ...
Journal of Applied Physics 114 (18), 184502, 2013
302013
Compact modeling of nanoscale trapezoidal FinFETs
N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ...
IEEE Transactions on Electron Devices 61 (2), 324-332, 2013
302013
Origin of low-frequency noise in the low drain current range of bottom-gate amorphous IGZO thin-film transistors
CG Theodorou, A Tsormpatzoglou, CA Dimitriadis, SA Khan, MK Hatalis, ...
IEEE electron device letters 32 (7), 898-900, 2011
262011
Analytical drain current compact model in the depletion operation region of short-channel triple-gate junctionless transistors
TA Oproglidis, A Tsormpatzoglou, DH Tassis, TA Karatsori, S Barraud, ...
IEEE Transactions on Electron Devices 64 (1), 66-72, 2016
232016
Symmetrical unified compact model of short-channel double-gate MOSFETs
K Papathanasiou, CG Theodorou, A Tsormpatzoglou, DH Tassis, ...
Solid-state electronics 69, 55-61, 2012
232012
Experimental characterization of the subthreshold leakage current in triple-gate FinFETs
A Tsormpatzoglou, CA Dimitriadis, M Mouis, G Ghibaudo, N Collaert
Solid-state electronics 53 (3), 359-363, 2009
232009
Comparative study of active-over-metal and metal-over-active amorphous IGZO thin-film transistors with low-frequency noise measurements
A Tsormpatzoglou, NA Hastas, S Khan, M Hatalis, CA Dimitriadis
IEEE electron device letters 33 (4), 555-557, 2012
222012
Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, N Collaert, ...
Solid-state electronics 57 (1), 31-34, 2011
202011
Compact capacitance model of undoped or lightly doped ultra-scaled triple-gate FinFETs
N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ...
IEEE transactions on electron devices 59 (12), 3306-3312, 2012
192012
Deep levels in silicon Schottky junctions with embedded arrays of β‐Fe Si 2 nanocrystallites
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, L Dózsa, NG Galkin, ...
Journal of applied physics 100 (7), 074313, 2006
192006
Analytical compact model for lightly doped nanoscale ultrathin-body and box SOI MOSFETs with back-gate control
TA Karatsori, A Tsormpatzoglou, CG Theodorou, EG Ioannidis, ...
IEEE Transactions on Electron Devices 62 (10), 3117-3124, 2015
172015
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