Παρακολούθηση
Ching-Lien Hsiao
Ching-Lien Hsiao
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα liu.se - Αρχική σελίδα
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Παρατίθεται από
Παρατίθεται από
Έτος
Self-assembled vertical GaN nanorods grown by molecular-beam epitaxy
LW Tu, CL Hsiao, TW Chi, I Lo, KY Hsieh
Applied Physics Letters 82 (10), 1601-1603, 2003
1592003
Generation of electricity in GaN nanorods induced by piezoelectric effect
WS Su, YF Chen, CL Hsiao, LW Tu
Applied Physics Letters 90 (6), 2007
1252007
A free‐standing high‐output power density thermoelectric device based on structure‐ordered PEDOT: PSS
Z Li, H Sun, CL Hsiao, Y Yao, Y Xiao, M Shahi, Y Jin, A Cruce, X Liu, ...
Advanced Electronic Materials 4 (2), 1700496, 2018
1102018
Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy
CL Hsiao, LW Tu, TW Chi, M Chen, TF Young, CT Chia, YM Chang
Applied Physics Letters 90 (4), 2007
892007
Specular scattering probability of acoustic phonons in atomically flat interfaces
YC Wen, CL Hsieh, KH Lin, HP Chen, SC Chin, CL Hsiao, YT Lin, ...
Physical review letters 103 (26), 264301, 2009
702009
Electronic-grade GaN (0001)/Al2O3 (0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
M Junaid, CL Hsiao, J Palisaitis, J Jensen, PO Persson, L Hultman, ...
Applied Physics Letters 98 (14), 2011
642011
Hydrogen in InN: A ubiquitous phenomenon in molecular beam epitaxy grown material
V Darakchieva, K Lorenz, NP Barradas, E Alves, B Monemar, M Schubert, ...
Applied Physics Letters 96 (8), 2010
502010
Photoluminescence spectroscopy of nearly defect-free InN microcrystals exhibiting nondegenerate semiconductor behaviors
CL Hsiao, HC Hsu, LC Chen, CT Wu, CW Chen, M Chen, LW Tu, ...
Applied Physics Letters 91 (18), 2007
422007
Review of GaN thin film and nanorod growth using magnetron sputter epitaxy
A Prabaswara, J Birch, M Junaid, EA Serban, L Hultman, CL Hsiao
Applied Sciences 10 (9), 3050, 2020
402020
Polycrystalline to single-crystalline InN grown on Si (111) substrates by plasma-assisted molecular-beam epitaxy
CL Hsiao, LW Tu, M Chen, ZW Jiang, NW Fan, YJ Tu, KR Wang
Japanese journal of applied physics 44 (8L), L1076, 2005
392005
Effect of strain on low-loss electron energy loss spectra of group-III nitrides
J Palisaitis, CL Hsiao, M Junaid, J Birch, L Hultman, POÅ Persson
Physical Review B 84 (24), 245301, 2011
372011
Energy relaxation of InN thin films
DJ Jang, GT Lin, CL Wu, CL Hsiao, LW Tu, ME Lee
Applied Physics Letters 91 (9), 2007
372007
High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment
CL Hsiao, TW Liu, CT Wu, HC Hsu, GM Hsu, LC Chen, WY Shiao, ...
Applied Physics Letters 92 (11), 2008
362008
Polarization-resolved fine-structure splitting of zero-dimensional InGaN excitons
S Amloy, YT Chen, KF Karlsson, KH Chen, HC Hsu, CL Hsiao, LC Chen, ...
Physical Review B 83 (20), 201307, 2011
342011
Auger recombination in InN thin films
DJ Jang, GT Lin, CL Hsiao, LW Tu, ME Lee
Applied Physics Letters 92 (4), 2008
342008
Structural anisotropy of nonpolar and semipolar InN epitaxial layers
V Darakchieva, MY Xie, N Franco, F Giuliani, B Nunes, E Alves, CL Hsiao, ...
Journal of Applied Physics 108 (7), 2010
332010
Electron accumulation at nonpolar and semipolar surfaces of wurtzite InN from generalized infrared ellipsometry
V Darakchieva, M Schubert, T Hofmann, B Monemar, CL Hsiao, TW Liu, ...
Applied Physics Letters 95 (20), 2009
332009
Epitaxial GaN nanorods free from strain and luminescent defects
HW Seo, QY Chen, MN Iliev, LW Tu, CL Hsiao, JK Mean, WK Chu
Applied physics letters 88 (15), 2006
322006
Room-temperature heteroepitaxy of single-phase Al1− xInxN films with full composition range on isostructural wurtzite templates
CL Hsiao, J Palisaitis, M Junaid, POÅ Persson, J Jensen, QX Zhao, ...
Thin Solid Films 524, 113-120, 2012
312012
Buffer controlled GaN nanorods growth on Si (111) substrates by plasma-assisted molecular beam epitaxy
CL Hsiao, LW Tu, TW Chi, HW Seo, QY Chen, WK Chu
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
312006
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