Yu-Chuan Lin
Yu-Chuan Lin
Assistant Research Professor, Pennsylvania State University
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα psu.edu - Αρχική σελίδα
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Παρατίθεται από
Παρατίθεται από
Έτος
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
KK Liu, W Zhang, YH Lee, YC Lin, MT Chang, CY Su, CS Chang, H Li, ...
Nano letters 12 (3), 1538-1544, 2012
18492012
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
YC Lin, W Zhang, JK Huang, KK Liu, YH Lee, CT Liang, CW Chu, LJ Li
Nanoscale 4 (20), 6637-6641, 2012
6502012
Two-dimensional gallium nitride realized via graphene encapsulation
ZY Al Balushi, K Wang, RK Ghosh, RA Vilá, SM Eichfeld, JD Caldwell, ...
Nature materials 15 (11), 1166-1171, 2016
4292016
Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ...
Nature Communications 6, 7311, 2015
3282015
Highly Scalable, Atomically Thin WSe2 grown via Metal-Organic Chemical Vapor Deposition
SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ...
ACS nano 9 (2), 2080-2087, 2015
3152015
Direct synthesis of van der Waals solids
YC Lin, N Lu, N Perea-Lopez, J Li, Z Lin, X Peng, CH Lee, C Sun, ...
ACS nano 8 (4), 3715-3723, 2014
2682014
Magnetic brightening and control of dark excitons in monolayer WSe2
XX Zhang, T Cao, Z Lu, YC Lin, F Zhang, Y Wang, Z Li, JC Hone, ...
Nature Nanotechnology 12, 883-888, 2017
2592017
Atomically Thin Heterostructures based on Single-Layer Tungsten Diselenide and Graphene
YC Lin, CYS Chang, RK Ghosh, J Li, H Zhu, R Addou, B Diaconescu, ...
Nano letters 14 (12), 6936–6941, 2014
1462014
Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
YC Lin, B Jariwala, BM Bersch, K Xu, Y Nie, B Wang, SM Eichfeld, ...
ACS nano 12 (2), 965-975, 2018
1292018
The Impact of Graphene Properties on GaN and AlN Nucleation
ZY Al Balushi, T Miyagi, YC Lin, K Wang, L Calderin, G Bhimanapati, ...
Surface Science 634, 81-88, 2015
742015
Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2–WSe2 Heterobilayers
Y Pan, S Fölsch, Y Nie, D Waters, YC Lin, B Jariwala, K Zhang, K Cho, ...
Nano Letters 18 (3), 1849-1855, 2018
582018
Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry
SM Eichfeld, CM Eichfeld, YC Lin, L Hossain, JA Robinson
APL Materials 2 (9), 092508, 2014
562014
Impact of Post-Lithography Polymer Residue on the Electrical Characteristics of MoS2 and WSe2 Field Effect Transistors
J Liang, K Xu, B Toncini, B Bersch, B Jariwala, YC Lin, JA Robinson, ...
Advanced Materials Interfaces 6 (3), 1801321, 2018
412018
Excitonic effects in tungsten disulfide monolayers on two-layer graphene
CE Giusca, I Rungger, V Panchal, C Melios, Z Lin, YC Lin, E Kahn, ...
ACS nano 10 (8), 7840-7846, 2016
412016
One dimensional metallic edges in atomically thin WSe2 induced by air exposure
R Addou, CM Smyth, JY Noh, YC Lin, Y Pan, S Eichfeld, S Fölsch, ...
2D Materials 5 (2), 025017, 2018
362018
Large-area synthesis of WSe2 from WO3 by selenium–oxygen ion exchange
P Browning, S Eichfeld, K Zhang, L Hossain, YC Lin, K Wang, N Lu, ...
2D Materials 2 (1), 014003, 2015
342015
Two‐Dimensional Palladium Diselenide with Strong In‐Plane Optical Anisotropy and High Mobility Grown by Chemical Vapor Deposition
Y Gu, H Cai, J Dong, Y Yu, AN Hoffman, C Liu, AD Oyedele, YC Lin, Z Ge, ...
Advanced Materials 32 (19), 1906238, 2020
302020
Selective-area growth and controlled substrate coupling of transition metal dichalcogenides
BM Bersch, SM Eichfeld, YC Lin, K Zhang, GR Bhimanapati, AF Piasecki, ...
2D Materials 4, 025083, 2017
302017
Low Energy Implantation into Transition Metal Dichalcogenide Monolayers to Form Janus Structures
YC Lin, C Liu, Y Yu, E Zarkadoula, M Yoon, AA Puretzky, L Liang, X Kong, ...
ACS nano 14 (4), 3896-3906, 2020
282020
Synthesis and emerging properties of 2D layered III–VI metal chalcogenides
H Cai, Y Gu, YC Lin, Y Yu, DB Geohegan, K Xiao
Applied Physics Reviews 6 (4), 041312, 2019
272019
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