Christian Koller
Christian Koller
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Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN
C Koller, G Pobegen, C Ostermaier, D Pogany
IEEE Transactions on Electron Devices 65 (12), 5314-5321, 2018
The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers
C Koller, G Pobegen, C Ostermaier, M Huber, D Pogany
Applied Physics Letters 111 (3), 2017
Evidence of defect band in carbon-doped GaN controlling leakage current and trapping dynamics
C Koller, G Pobegen, C Ostermaier, D Pogany
2017 IEEE International Electron Devices Meeting (IEDM), 33.4. 1-33.4. 4, 2017
Mechanism leading to semi-insulating property of carbon-doped GaN: Analysis of donor acceptor ratio and method for its determination
C Koller,C. and Lymperakis,L. and Pogany,D. and Pobegen,G. and Ostermaier
Journal of Applied Physics 130 (18), 185702, 2021
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes
A Nardo, C De Santi, C Koller, C Ostermaier, I Daumiller, G Meneghesso, ...
Microelectronics Reliability 126, 114255, 2021
Drain field plate impact on the hard-switching performance of AlGaN/GaN HEMTs
A Minetto, N Modolo, L Sayadi, C Koller, C Ostermaier, M Meneghini, ...
IEEE Transactions on Electron Devices 68 (10), 5003-5008, 2021
Trap‐Related Breakdown and Filamentary Conduction in Carbon Doped GaN
C Koller, G Pobegen, C Ostermaier, G Hecke, R Neumann, M Holzbauer, ...
physica status solidi (b) 256 (6), 1800527, 2019
Method to distinguish between buffer and surface trapping in stressed normally-ON GaN GITs using the gate-voltage dependence of recovery time constants
B Butej, V Padovan, D Pogany, G Pobegen, C Ostermaier, C Koller
IEEE Transactions on Electron Devices 69 (6), 3087-3093, 2022
Reliability issues in GaN electronic devices
M Ťapajna, C Koller
Nitride Semiconductor Technology: Power Electronics and optoelectronic†…, 2020
Charge Trapping in GaN Power Transistors: Challenges and Perspectives
M Meneghini, N Modolo, A Nardo, C De Santi, A Minetto, L Sayadi, ...
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and†…, 2021
Stress and recovery dynamics of drain current in GaN HD-GITs submitted to DC semi-ON stress
V Padovan, C Koller, G Pobegen, C Ostermaier, D Pogany
Microelectronics Reliability 100, 113482, 2019
Investigation of surface oxidation of III-N materials by AES
C Koller
Relevance of Threading Dislocations for the Thermal Oxidation of GaN (0001)
M Reiner, C Koller, K Pekoll, R Pietschnig, C Ostermaier
MRS Online Proceedings Library (OPL) 1792, mrss15-2133138, 2015
The Role of Carbon in creating insulating behavior in GaN-on-Si buffers: a physical model
C Koller
Technische Universitšt Wien, 2018
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