Παρακολούθηση
Haflidi Petur Gislason
Haflidi Petur Gislason
Professor of Experimental Physics, Science Institute, University of Iceland
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα hi.is
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Παρατίθεται από
Παρατίθεται από
Έτος
Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions
B Monemar, O Lagerstedt, HP Gislason
Journal of Applied Physics 51 (1), 625-639, 1980
2111980
Vacancy defects as compensating centers in Mg-doped GaN
S Hautakangas, J Oila, M Alatalo, K Saarinen, L Liszkay, D Seghier, ...
Physical review letters 90 (13), 137402, 2003
1572003
Vacancy defect-induced d0 ferromagnetism in undoped ZnO nanostructures: Controversial origin and challenges
B Qi, S Ólafsson, HP Gíslason
Progress in Materials Science 90, 45-74, 2017
932017
Frequency-dependent conductivity in lithium-diffused and annealed GaAs
JT Gudmundsson, HG Svavarsson, S Gudjonsson, HP Gislason
Physica B: Condensed Matter 340, 324-328, 2003
772003
Shifting photoluminescence bands in high-resistivity Li-compensated GaAs
HP Gislason, BH Yang, M Linnarsson
Physical Review B 47 (15), 9418, 1993
761993
Photoluminescence studies of the 1.911-eV Cu-related complex in GaP
HP Gislason, B Monemar, PJ Dean, DC Herbert, S Depinna, BC Cavenett, ...
Physical Review B 26 (2), 827, 1982
761982
Optical properties of the Cu-related characteristic-orange-luminescence center in GaP
B Monemar, HP Gislason, PJ Dean, DC Herbert
Physical Review B 25 (12), 7719, 1982
641982
Optical detection of magnetic resonance of the zinc vacancy in ZnSe via magnetic circular dichroism
DY Jeon, HP Gislason, GD Watkins
Physical Review B 48 (11), 7872, 1993
571993
Properties of Zn‐doped VPE‐grown GaN. II. Optical cross sections
B Monemar, HP Gislason, O Lagerstedt
Journal of Applied Physics 51 (1), 640-649, 1980
571980
Acceptor associates and bound excitons in GaAs: Cu
ZG Wang, HP Gislason, B Monemar
Journal of applied physics 58 (1), 230-239, 1985
541985
Paramagnetism in Mn/Fe implanted ZnO
HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ...
Applied Physics Letters 97 (14), 2010
482010
Determination of the antisite structure in InP by optically detected electron-nuclear double resonance
DY Jeon, HP Gislason, JF Donegan, GD Watkins
Physical Review B 36 (2), 1324, 1987
471987
Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN: Mg
D Seghier, HP Gislason
Journal of Applied Physics 88 (11), 6483-6487, 2000
412000
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.306 eV
HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, A Kana, ...
Physical Review B 31 (6), 3774, 1985
351985
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy
D Seghier, HP Gislason
Journal of Materials Science: Materials in Electronics 19, 687-691, 2008
332008
Properties of GaN tunneling MIS light‐emitting diodes
O Lagerstedt, B Monemar, H Gislason
Journal of Applied Physics 49 (5), 2953-2957, 1978
291978
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.242 eV
HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, S Depinna, ...
Physical Review B 32 (6), 3958, 1985
251985
Lattice locations and properties of Fe in Co/Fe co-implanted ZnO
HP Gunnlaugsson, K Johnston, TE Mølholt, G Weyer, R Mantovan, ...
Applied Physics Letters 100 (4), 2012
242012
Gallium and nitrogen vacancies in GaN: Impurity decoration effects
S Hautakangas, V Ranki, I Makkonen, MJ Puska, K Saarinen, L Liszkay, ...
Physica B: Condensed Matter 376, 424-427, 2006
242006
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.172 eV
HP Gislason, B Monemar, ME Pistol, A Kana’ah, BC Cavenett
Physical Review B 33 (2), 1233, 1986
241986
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