Παρακολούθηση
Mattia Halter
Mattia Halter
Process Engineer, R&D at Lumiphase
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα lumiphase.com
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Παρατίθεται από
Παρατίθεται από
Έτος
A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights
M Halter, L Bégon-Lours, V Bragaglia, M Sousa, B Offrein, S Abel, ...
ACS Applied Materials & Interfaces, 2020
882020
Stabilization of ferroelectric HfxZr1− xO2 films using a millisecond flash lamp annealing technique
É O’Connor, M Halter, F Eltes, M Sousa, A Kellock, S Abel, J Fompeyrine
Apl Materials 6 (12), 2018
602018
Monolithically integrated CMOS-compatible III–V on silicon lasers
M Seifried, G Villares, Y Baumgartner, H Hahn, M Halter, F Horst, D Caimi, ...
IEEE Journal of Selected Topics in Quantum Electronics 24 (6), 1-9, 2018
322018
Reliability aspects of ferroelectric TiN/Hf0. 5Zr0. 5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition
C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, M Halter, ...
Applied Physics Letters 117 (21), 2020
272020
Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware
L Bégon‐Lours, M Halter, FM Puglisi, L Benatti, DF Falcone, Y Popoff, ...
Advanced Electronic Materials 8 (6), 2101395, 2022
252022
Filamentary TaOx/HfO2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
T Stecconi, R Guido, L Berchialla, A La Porta, J Weiss, Y Popoff, M Halter, ...
Advanced Electronic Materials 8 (10), 2200448, 2022
202022
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
L Bégon-Lours, M Halter, M Sousa, Y Popoff, DD Pineda, DF Falcone, ...
Neuromorphic Computing and Engineering 2 (2), 024001, 2022
132022
Analog resistive switching in BEOL, ferroelectric synaptic weights
L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, D Davila, ...
IEEE Journal of the Electron Devices Society 9, 1275-1281, 2021
122021
A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide
M Halter, L Bégon-Lours, M Sousa, Y Popoff, U Drechsler, V Bragaglia, ...
Communications Materials 4 (1), 14, 2023
102023
Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO4/TiOx Junctions
L Bégon-Lours, M Halter, Y Popoff, BJ Offrein
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000524, 2021
102021
A back-end-of-line compatible, ferroelectric analog non-volatile memory
L Bégon-Lours, M Halter, DD Pineda, V Bragaglia, Y Popoff, A La Porta, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
72021
ESSCIRC 2021–IEEE 47th Eur
L Begon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, BJ Offrein
Solid State Circuits Conf. Proc, 87-90, 2021
62021
A BEOL compatible, 2-terminals, ferroelectric analog non-volatile memory
L Bégon-Lours, M Halter, DD Pineda, Y Popoff, V Bragaglia, A La Porta, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
52021
Towards electro-optical integration of hybrid III-V on Si lasers into the BEOL of a CMOS technology
H Hahn, M Seifried, G Villares, Y Baumgartner, M Halter, C Caër, D Caimi, ...
2017 75th Annual Device Research Conference (DRC), 1-2, 2017
52017
Ferroelectric memristors for neuromorphic applications: design, fabrication, and integration
M Halter
ETH Zurich, 2022
32022
Physical modeling of HZO-based ferroelectric field-effect transistors with a WOx channel
X Wen, M Halter, L Bégon-Lours, M Luisier
Frontiers in Nanotechnology 4, 900592, 2022
22022
Back-End, CMOS-Compatible Ferroelectric FinFET for Synaptic Weights
DF Falcone, M Halter, L Bégon-Lours, BJ Offrein
Frontiers in Electronic Materials 2, 8, 2022
22022
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor
L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, BJ Offrein
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 87-90, 2021
22021
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM
T Stecconi, Y Popoff, R Guido, D Falcone, M Halter, M Sousa, F Horst, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
12022
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states
T Stecconi, Y Popoff, R Guido, M Halter, D Falcone, A La Porta, F Horst, ...
2022 Device Research Conference (DRC), 1-2, 2022
12022
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