AlGaN deep-ultraviolet light-emitting diodes J Zhang, X Hu, A Lunev, J Deng, Y Bilenko, TM Katona, MS Shur, ...
Japanese journal of applied physics 44 (10R), 7250, 2005
149 2005 Radiative and nonradiative processes in strain-free films studied by time-resolved photoluminescence and positron annihilation techniques T Onuma, SF Chichibu, A Uedono, T Sota, P Cantu, TM Katona, ...
Journal of applied physics 95 (5), 2495-2504, 2004
119 2004 Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation A Uedono, S Ishibashi, S Keller, C Moe, P Cantu, TM Katona, DS Kamber, ...
Journal of Applied Physics 105 (5), 2009
89 2009 10 milliwatt pulse operation of 265 nm AlGaN light emitting diodes Y Bilenko, A Lunev, X Hu, J Deng, TM Katona, J Zhang, R Gaska, ...
Japanese journal of applied physics 44 (1L), L98, 2004
76 2004 Power light emitting diode and method with current density operation TM Katona, JW Raring, MP D'evelyn, MR Krames
US Patent 8,502,465, 2013
71 2013 High Voltage Device and Method for Optical Devices D Feezell, R Sharma, A Chakraborty, TA Trottier, T Katona, M D'evelyn
US Patent App. 13/179,346, 2012
67 2012 Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% P Waltereit, H Sato, C Poblenz, DS Green, JS Brown, M McLaurin, ...
Applied physics letters 84 (15), 2748-2750, 2004
65 2004 Deep ultraviolet light‐emitting diodes X Hu, J Deng, JP Zhang, A Lunev, Y Bilenko, T Katona, MS Shur, R Gaska, ...
physica status solidi (a) 203 (7), 1815-1818, 2006
55 2006 Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates TM Katona, MD Craven, PT Fini, JS Speck, SP DenBaars
Applied Physics Letters 79 (18), 2907-2909, 2001
51 2001 Maskless lateral epitaxial overgrowth of high-aluminum-content TM Katona, P Cantu, S Keller, Y Wu, JS Speck, SP DenBaars
Applied physics letters 84 (24), 5025-5027, 2004
49 2004 Critical fluctuations and lowest-Landau-level scaling of the specific heat of high-temperature superconductors SW Pierson, TM Katona, Z Tes̆anović, OT Valls
Physical Review B 53 (13), 8638, 1996
48 1996 Robust 290 nm emission light emitting diodes over pulsed laterally overgrown AlN V Adivarahan, Q Fareed, M Islam, T Katona, B Krishnan, A Khan
Japanese Journal of Applied Physics 46 (10L), L877, 2007
47 2007 Robust 285 nm deep UV light emitting diodes over metal organic hydride vapor phase epitaxially grown AlN/sapphire templates V Adivarahan, Q Fareed, S Srivastava, T Katona, M Gaevski, A Khan
Japanese journal of applied physics 46 (6L), L537, 2007
37 2007 Deep-ultraviolet light-emitting diodes for frequency domain measurements of fluorescence lifetime in basic biofluorophores P Vita, N Kurilčik, S Juršėnas, A Žukauskas, A Lunev, Y Bilenko, J Zhang, ...
Applied Physics Letters 87 (8), 2005
32 2005 247 nm ultra-violet light emitting diodes J Deng, Y Bilenko, A Lunev, X Hu, TM Katona, J Zhang, MS Shur, ...
Japanese journal of applied physics 46 (4L), L263, 2007
31 2007 University startup accelerators: startup launchpads or vehicles for entrepreneurial learning? LE Metcalf, TM Katona, JL York
Entrepreneurship Education and Pedagogy 4 (4), 666-701, 2021
30 2021 Shatalov., M.; Khan, A X Hu, J Deng, JP Zhang, A Lunev, Y Bilenko, T Katona, MS Shur, R Gaska
Phys. Status Solidi A 203, 1815, 2006
30 2006 Status of solid state lighting product development and future trends for general illumination TM Katona, PM Pattison, S Paolini
Annual Review of Chemical and Biomolecular Engineering 7, 263-281, 2016
28 2016 Back-end processes for substrates re-use FTC Shum, TM Katona, MR Krames
US Patent 8,153,475, 2012
28 2012 Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy TM Katona, JS Speck, SP DenBaars
Applied Physics Letters 81 (19), 3558-3560, 2002
28 2002