Bernhard Stampfer
Bernhard Stampfer
Institute for Microelectronics, TU Wien
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Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors
B Stampfer, F Zhang, YY Illarionov, T Knobloch, P Wu, M Waltl, A Grill, ...
ACS nano 12 (6), 5368-5375, 2018
A Physical Model for the Hysteresis in MoS2 Transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, F Schanovsky, B Stampfer, ...
IEEE Journal of the Electron Devices Society 6, 972-978, 2018
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
Toward automated defect extraction from bias temperature instability measurements
D Waldhoer, C Schleich, J Michl, B Stampfer, K Tselios, EG Ioannidis, ...
IEEE Transactions on Electron Devices 68 (8), 4057-4063, 2021
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology?
M Waltl, T Knobloch, K Tselios, L Filipovic, B Stampfer, Y Hernandez, ...
Advanced Materials 34 (48), 2201082, 2022
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
Separation of electron and hole trapping components of PBTI in SiON nMOS transistors
M Waltl, B Stampfer, G Rzepa, B Kaczer, T Grasser
Microelectronics Reliability 114, 113746, 2020
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018
The mysterious bipolar bias temperature stress from the perspective of gate-sided hydrogen release
T Grasser, B Kaczer, B O’Sullivan, G Rzepa, B Stampfer, M Waltl
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
Single-versus multi-step trap assisted tunneling currents—Part I: Theory
C Schleich, D Waldhör, T Knobloch, W Zhou, B Stampfer, J Michl, M Waltl, ...
IEEE Transactions on Electron Devices 69 (8), 4479-4485, 2022
Characterization and modeling of single defects in GaN/AlGaN fin-MIS-HEMTs
A Grill, B Stampfer, M Waltl, KS Im, JH Lee, C Ostermaier, H Ceric, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 3B-5.1-3B-5.5, 2017
Evidence of tunneling driven random telegraph noise in cryo-CMOS
J Michl, A Grill, B Stampfer, D Waldhoer, C Schleich, T Knobloch, ...
2021 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2021
Semi-automated extraction of the distribution of single defects for nMOS transistors
B Stampfer, F Schanovsky, T Grasser, M Waltl
Micromachines 11 (4), 446, 2020
Analysis of single electron traps in nano-scaled MoS2 FETs at cryogenic temperatures
T Knobloch, J Michl, D Waldhör, Y Illarionov, B Stampfer, A Grill, R Zhou, ...
Proceedings of the Device Research Conference (DRC), 52-53, 2020
Advanced electrical characterization of single oxide defects utilizing noise signals
B Stampfer, A Grill, M Waltl
Noise in Nanoscale Semiconductor Devices, 229-257, 2020
Electrostatic coupling and identification of single-defects in GaN/AlGaN Fin-MIS-HEMTs
A Grill, B Stampfer, KS Im, JH Lee, C Ostermaier, H Ceric, M Waltl, ...
Solid-State Electronics 156, 41-47, 2019
Impact of bias temperature instabilities on the performance of logic inverter circuits using different SiC transistor technologies
Y Hernandez, B Stampfer, T Grasser, M Waltl
Crystals 11 (9), 1150, 2021
Impact of single-defects on the variability of CMOS inverter circuits
M Waltl, D Waldhoer, K Tselios, B Stampfer, C Schleich, G Rzepa, ...
Microelectronics Reliability 126, 114275, 2021
On the distribution of single defect threshold voltage shifts in SiON transistors
K Tselios, D Waldhör, B Stampfer, J Michl, EG Ioannidis, H Enichlmair, ...
IEEE Transactions on Device and Materials Reliability 21 (2), 199-206, 2021
Advanced electrical characterization of charge trapping in MOS transistors
B Stampfer
Technische Universität Wien, 2020
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