| TCAD RF performance investigation of transparent gate recessed channel MOSFET A Kumar, N Gupta, R Chaujar Microelectronics Journal 49, 36-42, 2016 | 57 | 2016 |
| Optimization of high-k and gate metal workfunction for improved analog and intermodulation performance of Gate Stack (GS)-GEWE-SiNW MOSFET N Gupta, R Chaujar Superlattice and Microstructures, 2016 | 53 | 2016 |
| Analysis of novel transparent gate recessed channel (TGRC) MOSFET for improved analog behaviour A Kumar, N Gupta, R Chaujar Microsystem technologies 22, 2665-2671, 2016 | 47 | 2016 |
| Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET N Gupta, A Kumar, R Chaujar Journal of Computational Electronics 14, 798-810, 2015 | 39 | 2015 |
| Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design A Kumar, N Gupta, SK Tripathi, MM Tripathi, R Chaujar AEU-International Journal of Electronics and Communications 115, 153052, 2020 | 38 | 2020 |
| Investigation of temperature variations on analog/RF and linearity performance of stacked gate GEWE-SiNW MOSFET for improved device reliability N Gupta, R Chaujar Microelectronics Reliability 64, 235-241, 2016 | 35 | 2016 |
| Power gain assessment of ITO based transparent gate recessed channel (TGRC) MOSFET for RF/wireless applications A Kumar, N Gupta, R Chaujar Superlattices and Microstructures 91, 290-301, 2016 | 33 | 2016 |
| Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers N Gupta, R Chaujar Applied Physics A 122, 1-9, 2016 | 30 | 2016 |
| thin-film transistors (TFTs) for highly sensitive biosensing applications: a review A Kumar, AK Goyal, N Gupta ECS Journal of Solid State Science and Technology 9 (11), 115022, 2020 | 29 | 2020 |
| Increased efficiency of 23% for CIGS solar cell by using ITO as front contact A Kumar, AK Goyal, U Gupta, N Gupta, R Chaujar Materials Today: Proceedings 28, 361-365, 2020 | 23 | 2020 |
| Numerical assessment of high-k spacer on symmetric S/D underlap GAA junctionless accumulation mode silicon nanowire MOSFET for RFIC design N Gupta, A Kumar Applied Physics A 127 (1), 76, 2021 | 21 | 2021 |
| Simulation of perovskite solar cell employing ZnO as electron transport layer (ETL) for improved efficiency A Kumar, U Gupta, R Chaujar, MM Tripathi, N Gupta Materials Today: Proceedings 46, 1684-1687, 2021 | 21 | 2021 |
| Dielectric modulated transparent gate thin film transistor for biosensing applications A Kumar, M Roy, N Gupta, MM Tripathi, R Chaujar Materials Today: Proceedings 28, 141-145, 2020 | 16 | 2020 |
| Analysis of structural parameters on sensitivity of black phosphorus junctionless recessed channel MOSFET for biosensing application A Kumar, N Gupta, MM Tripathi, R Chaujar Microsystem Technologies 26, 2227-2233, 2020 | 15 | 2020 |
| Assessment of high-k gate stack on sub-10 nm SOI-FinFET for high-performance analog and RF applications perspective N Gupta, A Kumar ECS Journal of Solid State Science and Technology 9 (12), 123009, 2020 | 14 | 2020 |
| Oxide bound impact on hot-carrier degradation for gate electrode workfunction engineered (GEWE) silicon nanowire MOSFET N Gupta, A Kumar, R Chaujar Microsystem Technologies 22, 2655-2664, 2016 | 14 | 2016 |
| 20 nm GAA-GaN/Al2O3 nanowire MOSFET for improved analog/linearity performance metrics and suppressed distortion N Gupta, A Jain, A Kumar Applied Physics A 127 (7), 530, 2021 | 13 | 2021 |
| Effect of structured parameters on the hot-carrier immunity of transparent gate recessed channel (TGRC) MOSFET A Kumar, N Gupta, R Chaujar Microsystem Technologies 23 (9), 4057-4064, 2017 | 13 | 2017 |
| Implications of transport models on the analog performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET N Gupta, R Chaujar 2014 2nd International Conference on Devices, Circuits and Systems (ICDCS), 1-5, 2014 | 11 | 2014 |
| Highly efficient tin oxide‐based colloidal lead sulfide quantum dot solar cell A Kumar, P Gahlaut, N Gupta Energy Storage 5 (2), e331, 2023 | 9 | 2023 |
Dr. Ajay Kumar, SMIEEEJaypee Institute of Information Technology, NoidaΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα jiit.ac.in
