| Method to improve the step coverage and pattern loading for dielectric films M Balseanu, LQ Xia, MY Shek, H M'saad US Patent 7,780,865, 2010 | 687 | 2010 |
| High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films N Rajagopalan, LQ Xia, M Balseanu, T Nowak, R Shah, H Xu, C Peterson, ... US Patent App. 10/981,430, 2006 | 531 | 2006 |
| Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure M Balseanu, V Nguyen, LQ Xia, DR Witty, H M'saad, MY Shek, I Roflox US Patent 8,138,104, 2012 | 508 | 2012 |
| Method for critical dimension shrink using conformal pecvd films LQ Xia, M Balseanu, M Shek, SY Li, Z Cui, MB Naik, MD Armacost, ... US Patent App. 12/257,137, 2009 | 474 | 2009 |
| Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure M Balseanu, MS Cox, LQ Xia, MY Shek, J Lee, V Zubkov, TF Huang, ... US Patent 8,129,290, 2012 | 461 | 2012 |
| Method to increase the compressive stress of PECVD silicon nitride films M Balseanu, LQ Xia, V Zubkov, MY Shek, I Rolfox, H M'saad US Patent 7,732,342, 2010 | 458 | 2010 |
| Method And Apparatus For Low Temperature ALD Deposition M Mahajani, SD Marcus, LQ Xia, M Balseanu, V Nguyen, N Li, J Liu, ... US Patent App. 13/948,492, 2014 | 431 | 2014 |
| Post-Deposition Treatment Methods For Silicon Nitride V Nguyen, I Roflox, M Balseanu, LQ Xia, H Pan, W Liu, MJ Bevan, ... US Patent App. 14/212,425, 2014 | 427 | 2014 |
| Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ uv cure M Balseanu, V Nguyen, LQ Xia, DR Witty, H M'saad, MY Shek, I Roflox US Patent App. 13/365,226, 2012 | 398 | 2012 |
| Selective deposition of silicon nitride films for spacer applications N Li, M Balseanu, LQ Xia US Patent 10,319,583, 2019 | 372 | 2019 |
| Gapfill improvement with low etch rate dielectric liners YS Kwon, B Jang, A Wang, YS Lee, M Balseanu, LQ Xia, JH Jeon US Patent 7,910,491, 2011 | 300 | 2011 |
| Seamless gap-fill with spatial atomic layer deposition N Li, V Nguyen, M Balseanu, LQ Xia, SD Marcus, H Yang, K Tanaka US Patent App. 14/630,757, 2015 | 299 | 2015 |
| Method for forming an air gap in multilevel interconnect structure LQ Xia, H Xu, M Balseanu, DR Witty, H M'Saad US Patent App. 11/869,409, 2009 | 287 | 2009 |
| Boron nitride and boron nitride-derived materials deposition method JU Huh, M Balseanu, LQ Xia, VT Nguyen, DR Witty, H M'saad US Patent App. 11/765,257, 2008 | 276 | 2008 |
| Methods and apparatus for selective dry etch N Li, M Balseanu, LQ Xia, D Yang, A Wang US Patent 10,134,581, 2018 | 187 | 2018 |
| Tensile and compressive stressed materials for semiconductors M Balseanu, K Jung, L Huang, LQ Xia, R Wang, D Witty, L Stern, ... US Patent App. 11/055,936, 2006 | 140 | 2006 |
| Method to improve the step coverage and pattern loading for dielectric films M Balseanu, M Shek, LQ Xia, H M'saad US Patent 7,601,651, 2009 | 136 | 2009 |
| Boron film interface engineering M Balseanu, LQ Xia, DR Witty, Y Chen US Patent 8,563,090, 2013 | 93 | 2013 |
| Methods and systems for forming at least one dielectric layer LQ Xia, M Balseanu, V Nguyen, DR Witty, H M'saad, H Yang, X Lu, ... US Patent 7,871,926, 2011 | 82 | 2011 |
| Boron nitride and boron-nitride derived materials deposition method M Balseanu, CD Bencher, Y Chen, LY Miao, V Nguyen, I Roflox, LQ Xia, ... US Patent 8,148,269, 2012 | 77 | 2012 |
