| The rectenna device: From theory to practice (a review) E Donchev, JS Pang, PM Gammon, A Centeno, F Xie, PK Petrov, ... MRS Energy & Sustainability 1, 2014 | 71 | 2014 |
| Modelling the inhomogeneous SiC Schottky interface PM Gammon, A Pérez-Tomás, VA Shah, O Vavasour, E Donchev, ... Journal of Applied Physics 114 (22), 223704, 2013 | 68 | 2013 |
| Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN A Fontserč, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Applied Physics Letters 99 (21), 213504, 2011 | 48 | 2011 |
| Si∕ SiC heterojunctions fabricated by direct wafer bonding MR Jennings, A Pérez-Tomás, OJ Guy, R Hammond, SE Burrows, ... Electrochemical and Solid State Letters 11 (11), H306, 2008 | 33 | 2008 |
| Analysis of inhomogeneous Ge/SiC heterojunction diodes PM Gammon, A Pérez-Tomás, VA Shah, GJ Roberts, MR Jennings, ... Journal of Applied Physics 106 (9), 093708, 2009 | 28 | 2009 |
| Si/SiC bonded wafer: A route to carbon free on SiC A Pérez-Tomás, M Lodzinski, OJ Guy, MR Jennings, M Placidi, J Llobet, ... Applied Physics Letters 94 (10), 103510, 2009 | 26 | 2009 |
| Silicon and the wide bandgap semiconductors, shaping the future power electronic device market P Gammon 2013 14th International Conference on Ultimate Integration on Silicon (ULIS …, 2013 | 25 | 2013 |
| Temperature dependence of Al/Ti-based Ohmic contact to GaN devices: HEMT and MOSFET A Fontserč, A Pérez-Tomás, M Placidi, P Fernández-Martínez, N Baron, ... Microelectronic engineering 88 (10), 3140-3144, 2011 | 25 | 2011 |
| On the Ti3SiC2 metallic phase formation for robust p-type 4H-SiC ohmic contacts MR Jennings, CA Fisher, D Walker, A Sanchez, A Pérez-Tomás, ... Materials Science Forum 778, 693-696, 2014 | 19 | 2014 |
| Modeling the effect of thin gate insulators (SiO2, SiN, Al2O3 and HfO2) on AlGaN/GaN HEMT forward characteristics grown on Si, sapphire and SiC A Pérez-Tomás, A Fontserč, MR Jennings, PM Gammon Materials science in semiconductor processing 16 (5), 1336-1345, 2013 | 19 | 2013 |
| Interface characteristics of and Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition PM Gammon, A Pérez-Tomás, MR Jennings, VA Shah, SA Boden, ... Journal of Applied Physics 107 (12), 124512, 2010 | 19 | 2010 |
| Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors A Fontsere, A Pérez-Tomás, M Placidi, J Llobet, N Baron, S Chenot, ... Nanotechnology 23 (39), 395204, 2012 | 18 | 2012 |
| Investigation of parasitic turn-ON in silicon IGBT and Silicon Carbide MOSFET devices: A technology evaluation S Jahdi, O Alatise, J Ortiz-Gonzalez, P Gammon, L Ran, P Mawby 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015 | 14 | 2015 |
| On the Schottky barrier height lowering effect of Ti3SiC2 in ohmic contacts to P-Type 4H-SiC CA Fisher, MR Jennings, YK Sharma, A Sanchez-Fuentes, D Walker, ... International Journal of Fundamental Physical Sciences 4 (3), 95-100, 2014 | 14 | 2014 |
| A study of temperature-related non-linearity at the metal-silicon interface PM Gammon, E Donchev, A Pérez-Tomás, VA Shah, JS Pang, PK Petrov, ... Journal of Applied Physics 112 (11), 114513, 2012 | 14 | 2012 |
| Improved performance of 4H-SiC PiN diodes using a novel combined high temperature oxidation and annealing process CA Fisher, MR Jennings, YK Sharma, DP Hamilton, PM Gammon, ... IEEE Transactions on Semiconductor Manufacturing 27 (3), 443-451, 2014 | 13 | 2014 |
| Gate traps inducing band-bending fluctuations on AlGaN/GaN heterojunction transistors A Pérez-Tomás, A Fontsere, S Sánchez, MR Jennings, PM Gammon, ... Applied Physics Letters 102 (2), 023511, 2013 | 13 | 2013 |
| Analysis of linear-doped Si/SiC power LDMOSFETs based on device simulation C Chan, PA Mawby, PM Gammon IEEE Transactions on Electron Devices 63 (6), 2442-2448, 2016 | 12 | 2016 |
| Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC A Pérez-Tomás, A Fontserč, M Placidi, MR Jennings, PM Gammon Modelling and Simulation in Materials Science and Engineering 21 (3), 035004, 2013 | 12 | 2013 |
| High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry VA Shah, SD Rhead, JE Halpin, O Trushkevych, E Chávez-Ángel, ... Journal of Applied Physics 115 (14), 144307, 2014 | 11 | 2014 |
phil mawbyprofessor of power electronics, School of Engineering, university of warwick, UKVerified email at warwick.ac.uk
