Defect-Induced Magnetic Structure in PA Korzhavyi, IA Abrikosov, EA Smirnova, L Bergqvist, P Mohn, ...
Physical review letters 88 (18), 187202, 2002
138 2002 Influence of defects on the lattice constant of GaMnAs J Sadowski, JZ Domagala
Physical Review B 69 (7), 075206, 2004
105 2004 ZnTe nanowires grown on GaAs (100) substrates by molecular beam epitaxy E Janik, J Sadowski, P Dłużewski, S Kret, LT Baczewski, A Petroutchik, ...
Applied physics letters 89 (13), 2006
95 2006 Catalytic growth of ZnTe nanowires by molecular beam epitaxy: structural studies E Janik, P Dłużewski, S Kret, A Presz, H Kirmse, W Neumann, ...
Nanotechnology 18 (47), 475606, 2007
84 2007 Structural and magnetic properties of GaMnAs layers with high Mn-content grown by migration-enhanced epitaxy on GaAs (100) substrates J Sadowski, R Mathieu, P Svedlindh, JZ Domagała, J Bak-Misiuk, ...
Applied Physics Letters 78 (21), 3271-3273, 2001
83 2001 Structural and magnetic properties of molecular beam epitaxy grown GaMnAs layers J Sadowski, JZ Domagała, J Bak-Misiuk, S Koleśnik, M Sawicki, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
83 2000 Postgrowth annealing of (Ga, Mn) As under As capping: An alternative way to increase TC M Adell, L Ilver, J Kanski, V Stanciu, P Svedlindh, J Sadowski, ...
Applied Physics Letters 86 (11), 2005
80 2005 Weak localization in ferromagnetic (Ga, Mn) As nanostructures D Neumaier, K Wagner, S Geißler, U Wurstbauer, J Sadowski, ...
Physical review letters 99 (11), 116803, 2007
76 2007 Structure and optical anisotropy of vertically correlated submonolayer InAs/GaAs quantum dots Z Xu, D Birkedal, JM Hvam, Z Zhao, Y Liu, K Yang, A Kanjilal, J Sadowski
Applied physics letters 82 (22), 3859-3861, 2003
76 2003 Magnetization reversal in GaMnAs layers studied by Kerr effect D Hrabovsky, E Vanelle, AR Fert, DS Yee, JP Redoules, J Sadowski, ...
Applied physics letters 81 (15), 2806-2808, 2002
74 2002 Electron correlations in Mnx 1–x As as seen by resonant electron spectroscopy and dynamical mean field theory I Di Marco, P Thunström, MI Katsnelson, J Sadowski, K Karlsson, ...
Nature Communications 4 (1), 2645, 2013
71 2013 GaAs: Mn nanowires grown by molecular beam epitaxy of (Ga, Mn) As at MnAs segregation conditions J Sadowski, P Dłużewski, S Kret, E Janik, E Łusakowska, J Kanski, ...
Nano Letters 7 (9), 2724-2728, 2007
67 2007 Hybrid devices from single wall carbon nanotubes epitaxially grown into a semiconductor heterostructure A Jensen, JR Hauptmann, J Nygård, J Sadowski, PE Lindelof
Nano Letters 4 (2), 349-352, 2004
67 2004 Structure and magnetism of MnAs nanocrystals embedded in GaAs as a function of post-growth annealing temperature A Kwiatkowski, D Wasik, M Kamińska, R Bożek, J Szczytko, A Twardowski, ...
Journal of applied physics 101 (11), 2007
58 2007 Single ion anisotropy of Mn-doped GaAs measured by electron paramagnetic resonance OM Fedorych, EM Hankiewicz, Z Wilamowski, J Sadowski
Physical Review B 66 (4), 045201, 2002
55 2002 Ferromagnetism of GaMnAs studied by polarized neutron reflectometry H Kȩpa, J Kutner-Pielaszek, A Twardowski, CF Majkrzak, J Sadowski, ...
Physical Review B 64 (12), 121302, 2001
53 2001 Ga sublattice defects in (Ga, Mn) As: Thermodynamical and kinetic trends F Tuomisto, K Pennanen, K Saarinen, J Sadowski
Physical review letters 93 (5), 055505, 2004
52 2004 Electronic and structural properties of Ga As (100)(2× 4) and In As (100)(2× 4) surfaces studied by core-level photoemission and scanning tunneling microscopy P Laukkanen, M Kuzmin, RE Perälä, M Ahola, S Mattila, IJ Väyrynen, ...
Physical Review B 72 (4), 045321, 2005
50 2005 Effect of annealing on carrier density and Curie temperature in epitaxial (Ga, Mn) As thin films BS Sørensen, PE Lindelof, J Sadowski, R Mathieu, P Svedlindh
Applied physics letters 82 (14), 2287-2289, 2003
50 2003 Oxidized In-containing III-V (100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces MPJ Punkkinen, P Laukkanen, J Lång, M Kuzmin, M Tuominen, ...
Physical Review B 83 (19), 195329, 2011
47 2011 
Jaroslaw Z. DomagalaInstitute of Physics, Polish Academy of Science, Warsaw, PolandΗ διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα ifpan.edu.pl
