| Method of manufacture for an ultraviolet laser diode JW Raring, M McLaurin, P Rudy, PS Hsu, A Sztein US Patent 9,246,311, 2016 | 89 | 2016 |
| Calculated thermoelectric properties of InxGa1− xN, InxAl1− xN, and AlxGa1− xN A Sztein, J Haberstroh, JE Bowers, SP DenBaars, S Nakamura Journal of Applied Physics 113 (18), 2013 | 89 | 2013 |
| Manufacturable laser diode M McLaurin, A Sztein, PS Hsu, E Goutain, D Steigerwald, JW Raring US Patent 9,379,525, 2016 | 82 | 2016 |
| Manufacturable RGB laser diode source M McLaurin, A Sztein, PS Hsu, E Goutain, JW Raring, P Rudy, V Novotny US Patent 9,871,350, 2018 | 81 | 2018 |
| Manufacturable laser diode formed on C-plane gallium and nitrogen material M McLaurin, JW Raring, A Sztein, PS Hsu US Patent 9,368,939, 2016 | 78 | 2016 |
| Manufacturable multi-emitter laser diode D Steigerwald, M McLaurin, E Goutain, A Sztein, PS Hsu, P Rudy, ... US Patent 9,520,697, 2016 | 77 | 2016 |
| GaN-based integrated lateral thermoelectric device for micro-power generation A Sztein, H Ohta, J Sonoda, A Ramu, JE Bowers, SP DenBaars, ... Applied physics express 2 (11), 111003, 2009 | 69 | 2009 |
| Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes JW Raring, M McLaurin, A Sztein, PS Hsu US Patent 10,002,928, 2018 | 65 | 2018 |
| Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes JW Raring, M McLaurin, A Sztein, PS Hsu US Patent 9,653,642, 2017 | 65 | 2017 |
| High temperature thermoelectric properties of optimized InGaN A Sztein, H Ohta, JE Bowers, SP DenBaars, S Nakamura Journal of Applied Physics 110 (12), 2011 | 60 | 2011 |
| Manufacturable thin film gallium and nitrogen containing devices JW Raring, M McLaurin, A Sztein, PS Hsu US Patent 9,666,677, 2017 | 59 | 2017 |
| Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties A Sztein, JE Bowers, SP DenBaars, S Nakamura Applied Physics Letters 104 (4), 2014 | 57 | 2014 |
| Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material A Sztein, M McLaurin, PS Hsu, JW Raring US Patent 9,362,715, 2016 | 52 | 2016 |
| Manufacturable multi-emitter laser diode D Steigerwald, M McLaurin, E Goutain, A Sztein, PS Hsu, P Rudy, ... US Patent 10,566,767, 2020 | 36 | 2020 |
| Gallium and nitrogen containing laser device having confinement region PS Hsu, M McLaurin, JW Raring, A Sztein, B Buller US Patent 9,882,353, 2018 | 34 | 2018 |
| Manufacturable laser diode formed on C-plane gallium and nitrogen material M McLaurin, JW Raring, A Sztein, PS Hsu US Patent 9,774,170, 2017 | 34 | 2017 |
| Manufacturable laser diode M McLaurin, A Sztein, PS Hsu, E Goutain, D Steigerwald, JW Raring US Patent 10,367,334, 2019 | 33 | 2019 |
| Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates M McLaurin, A Sztein, PS Hsu, JW Raring US Patent 9,209,596, 2015 | 30 | 2015 |
| Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material A Sztein, M McLaurin, PS Hsu, JW Raring US Patent 10,141,714, 2018 | 27 | 2018 |
| Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates A Sztein, JE Bowers, SP DenBaars, S Nakamura Journal of Applied Physics 112 (8), 2012 | 27 | 2012 |
