Nikos Konofaos

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Evangelou EAssociate Prof. of Physics, Dept of Physics, Univ. of IoanninaVerified email at uoi.gr
Stergios LogothetidisΚαθηγητής τμήμα φυσικής αριστοτέλειο πανεπιστήμιο θεσσαλονίκηςVerified email at auth.gr
Agis IliadisProfessor of Electrical and Computer Engineering, University of MarylandVerified email at umd.edu
Maria VasilopoulouResearcher, National Centre for Scientific Research DemokritosVerified email at imel.demokritos.gr
Giorgos PapadimitropoulosResearch Fellow at NCSR DemokritosVerified email at imel.demokritos.gr
Dimitrios BalobasPhd Student, Aristotle University of ThessalonikiVerified email at csd.auth.gr
Panagiotis ArgitisResearch Director, National Center for Scientific Research "Demokritos", GreeceVerified email at imel.demokritos.gr
Nikos PetrellisUniversity of Peloponnese, Electrical and Computer EngineeringVerified email at uop.gr
KENNOU STELLADepartment of Chemical Engineering, University of PatrasVerified email at chemeng.upatras.gr
Konstantinos ProusalisVerified email at csd.auth.gr
George P. AlexiouProfessor of Computer Eng, Universtity of Patras, GreeceVerified email at upatras.gr
Dimitra G. GeorgiadouTheme Lead in Flexible and Organic Electronics, University of Southampton, UKVerified email at soton.ac.uk
Leonidas PalilisAssociate Professor, Department of Physics, University of PatrasVerified email at physics.upatras.gr
Ulf HelmerssonProfessor, Linköping UniversityVerified email at liu.se
Babis DimitriadisDepartment of Physics Aristotle University of Thessaloniki, 54124, GreeceVerified email at physics.auth.gr
L. SygellouInstitute of chemical engineering sciencesVerified email at iceht.forth.gr
Panos PatsalasProfessor of Advanced Materials, School of Physics, Aristotle University of ThessalonikiVerified email at physics.auth.gr
MARIA GIOTIVerified email at physics.auth.gr
Nikolaos A. StathopoulosProfessor of Electrical and Electronics Engineering, University of West AtticaVerified email at uniwa.gr
Mike KokkorisNational Technical University of AthensVerified email at central.ntua.gr

Nikos Konofaos

Professor, Aristotle University of Thessaloniki, Greece

Verified email at csd.auth.gr - Homepage

Microelectronics Nanoelectronics Semiconductor Devices Quantum Computing VLSI


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Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics N Konofaos Microelectronics journal 35 (5), 421-425, 2004	77	2004
Reduced molybdenum oxide as an efficient electron injection layer in polymer light-emitting diodes M Vasilopoulou, LC Palilis, DG Georgiadou, P Argitis, S Kennou, ... Applied Physics Letters 98 (12), 65, 2011	58	2011
Electrical properties of thin films on Si deposited by magnetron sputtering at low temperature Z Wang, V Kugler, U Helmersson, N Konofaos, EK Evangelou, S Nakao, ... Applied Physics Letters 79 (10), 1513-1515, 2001	55	2001
Characterisation of the Interface States between Amorphous Diamond‐Like Carbon Films and (100) Silicon N Konofaos, IP McClean, CB Thomas physica status solidi (a) 161 (1), 111-123, 1997	52	1997
Characterization of heterojunction devices constructed by amorphous diamondlike films on silicon N Konofaos, CB Thomas Journal of applied physics 81 (9), 6238-6245, 1997	50	1997
Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films S Logothetidis, P Patsalas, EK Evangelou, N Konofaos, I Tsiaoussis, ... Materials Science and Engineering: B 109 (1-3), 69-73, 2004	49	2004
Electrical characterization of the SiON/Si interface for applications on optical and MOS devices N Konofaos, EK Evangelou Semiconductor science and technology 18 (1), 56, 2002	48	2002
Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices M Vasilopoulou, LC Palilis, DG Georgiadou, P Argitis, S Kennou, I Kostis, ... Thin Solid Films 519 (17), 5748-5753, 2011	43	2011
Target localization utilizing the success rate in infrared pattern recognition N Petrellis, N Konofaos, GP Alexiou IEEE Sensors Journal 6 (5), 1355-1364, 2006	39	2006
Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices N Konofaos, EK Evangelou, X Aslanoglou, M Kokkoris, R Vlastou Semiconductor science and technology 19 (1), 50, 2003	35	2003
Design of Low-Power High-Performance 2–4 and 4–16 Mixed-Logic Line Decoders D Balobas, N Konofaos IEEE Transactions on Circuits and Systems II: Express Briefs 64 (2), 176 - 180, 2017	31	2017
Characterisation of the BaTiO3/p-Si interface and applications EK Evangelou, N Konofaos, MR Craven, WM Cranton, CB Thomas Applied surface science 166 (1-4), 504-507, 2000	30	2000
Properties of barium titanate (BaTiO3) thin films grown on silicon by rf magnetron sputtering EK Evangelou, N Konofaos, CB Thomas Philosophical Magazine B 80 (3), 395-407, 2000	30	2000
Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors EK Evangelou, G Mavrou, A Dimoulas, N Konofaos Solid-state electronics 51 (1), 164-169, 2007	28	2007
Properties and density of states of the interface between silicon and carbon films rich in bonds S Logothetidis, E Evangelou, N Konofaos Journal of applied physics 82 (10), 5017-5020, 1997	28	1997
Electrical characterisation of SrTiO3/Si interfaces N Konofaos, EK Evangelou, Z Wang, V Kugler, U Helmersson Journal of non-crystalline solids 303 (1), 185-189, 2002	27	2002
Amorphous diamondlike carbon‐silicon heterojunction devices formed by ion implantation N Konofaos, CB Thomas Applied physics letters 61 (23), 2805-2807, 1992	27	1992
Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures Z Wang, V Kugler, U Helmersson, EK Evangelou, N Konofaos, S Nakao, ... Philosophical Magazine B 82 (8), 891-903, 2002	25	2002
Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates M Shahinur Rahman, EK Evangelou, N Konofaos, A Dimoulas Journal of Applied Physics 112 (9), 094501, 2012	24	2012
Highly porous tungsten oxides for electrochromic applications I Kostis, M Vasilopoulou, A Soultati, P Argitis, N Konofaos, AM Douvas, ... Microelectronic engineering 111, 149-153, 2013	18	2013

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