N.Konofaos
TitleCited byYear
Electrical characterisation of SiON/n-Si structures for MOS VLSI electronics
N Konofaos
Microelectronics journal 35 (5), 421-425, 2004
712004
Reduced molybdenum oxide as an efficient electron injection layer in polymer light-emitting diodes
M Vasilopoulou, LC Palilis, DG Georgiadou, P Argitis, S Kennou, ...
Applied Physics Letters 98 (12), 65, 2011
522011
Electrical characterization of the SiON/Si interface for applications on optical and MOS devices
N Konofaos, EK Evangelou
Semiconductor science and technology 18 (1), 56, 2002
482002
Electrical properties of thin films on Si deposited by magnetron sputtering at low temperature
Z Wang, V Kugler, U Helmersson, N Konofaos, EK Evangelou, S Nakao, ...
Applied Physics Letters 79 (10), 1513-1515, 2001
482001
Characterisation of the Interface States between Amorphous Diamond‐Like Carbon Films and (100) Silicon
N Konofaos, IP McClean, CB Thomas
physica status solidi (a) 161 (1), 111-123, 1997
481997
Characterization of heterojunction devices constructed by amorphous diamondlike films on silicon
N Konofaos, CB Thomas
Journal of applied physics 81 (9), 6238-6245, 1997
451997
Dielectric properties and electronic transitions of porous and nanostructured cerium oxide films
S Logothetidis, P Patsalas, EK Evangelou, N Konofaos, I Tsiaoussis, ...
Materials Science and Engineering: B 109 (1-3), 69-73, 2004
392004
Tungsten oxides as interfacial layers for improved performance in hybrid optoelectronic devices
M Vasilopoulou, LC Palilis, DG Georgiadou, P Argitis, S Kennou, I Kostis, ...
Thin Solid Films 519 (17), 5748-5753, 2011
372011
Target localization utilizing the success rate in infrared pattern recognition
N Petrellis, N Konofaos, GP Alexiou
IEEE Sensors Journal 6 (5), 1355-1364, 2006
372006
Dielectric properties of CVD grown SiON thin films on Si for MOS microelectronic devices
N Konofaos, EK Evangelou, X Aslanoglou, M Kokkoris, R Vlastou
Semiconductor science and technology 19 (1), 50, 2003
352003
Properties of barium titanate (BaTiO3) thin films grown on silicon by rf magnetron sputtering
EK Evangelou, N Konofaos, CB Thomas
Philosophical Magazine B 80 (3), 395-407, 2000
312000
Characterisation of the BaTiO3/p-Si interface and applications
EK Evangelou, N Konofaos, MR Craven, WM Cranton, CB Thomas
Applied surface science 166 (1-4), 504-507, 2000
302000
Properties and density of states of the interface between silicon and carbon films rich in bonds
S Logothetidis, E Evangelou, N Konofaos
Journal of applied physics 82 (10), 5017-5020, 1997
271997
Amorphous diamondlike carbon‐silicon heterojunction devices formed by ion implantation
N Konofaos, CB Thomas
Applied physics letters 61 (23), 2805-2807, 1992
261992
Rare earth oxides as high-k dielectrics for Ge based MOS devices: An electrical study of Pt/Gd2O3/Ge capacitors
EK Evangelou, G Mavrou, A Dimoulas, N Konofaos
Solid-state electronics 51 (1), 164-169, 2007
222007
Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates
M Shahinur Rahman, EK Evangelou, N Konofaos, A Dimoulas
Journal of Applied Physics 112 (9), 094501, 2012
212012
Electrical characterisation of SrTiO3/Si interfaces
N Konofaos, EK Evangelou, Z Wang, V Kugler, U Helmersson
Journal of non-crystalline solids 303 (1), 185-189, 2002
192002
Characteristics of SrTiO3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures
Z Wang, V Kugler, U Helmersson, EK Evangelou, N Konofaos, S Nakao, ...
Philosophical Magazine B 82 (8), 891-903, 2002
182002
On the use of fdtd and ray-tracing schemes in the nanonetwork environment
K Kantelis, SA Amanatiadis, CK Liaskos, NV Kantartzis, N Konofaos, ...
IEEE Communications Letters 18 (10), 1823-1826, 2014
162014
Highly porous tungsten oxides for electrochromic applications
I Kostis, M Vasilopoulou, A Soultati, P Argitis, N Konofaos, AM Douvas, ...
Microelectronic Engineering 111, 149-153, 2013
152013
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Articles 1–20