| TCAD assessment of device design technologies for enhanced performance of nanoscale DG MOSFET RK Sharma, M Gupta, RS Gupta IEEE Transactions on Electron Devices 58 (9), 2936-2943, 2011 | 101 | 2011 |
| Dual-material double-gate SOI n-MOSFET: gate misalignment analysis RK Sharma, R Gupta, M Gupta, RS Gupta IEEE transactions on electron devices 56 (6), 1284-1291, 2009 | 58 | 2009 |
| Device design engineering for optimum analog/RF performance of nanoscale DG MOSFETs RK Sharma, M Bucher IEEE Transactions on Nanotechnology 11 (5), 992-998, 2012 | 55 | 2012 |
| CMOS small-signal and thermal noise modeling at high frequencies A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ... IEEE transactions on electron devices 60 (11), 3726-3733, 2013 | 46 | 2013 |
| Impact of electron irradiation on the ON-state characteristics of a 4H–SiC JBS diode J Vobecký, P Hazdra, S Popelka, RK Sharma IEEE Transactions on Electron Devices 62 (6), 1964-1969, 2015 | 34 | 2015 |
| The effect of light ion irradiation on 4H-SiC MPS power diode characteristics: Experiment and simulation RK Sharma, P Hazdra, S Popelka IEEE Transactions on Nuclear Science 62 (2), 534-541, 2015 | 23 | 2015 |
| A comprehensive analysis of nanoscale single-and multi-gate MOSFETs RK Sharma, CA Dimitriadis, M Bucher Microelectronics journal 52, 66-72, 2016 | 21 | 2016 |
| Graded channel architecture: the solution for misaligned DG FD SOI n-MOSFETs RK Sharma, R Gupta, M Gupta, RS Gupta Semiconductor science and technology 23 (7), 075041, 2008 | 21 | 2008 |
| Effect of neutron irradiation on high voltage 4H-SiC vertical JFET characteristics: characterization and modeling S Popelka, P Hazdra, R Sharma, V Zahlava, J Vobecký IEEE Transactions on Nuclear Science 61 (6), 3030-3036, 2014 | 19 | 2014 |
| Two-dimensional analytical subthreshold model of graded channel DG FD SOI n-MOSFET with gate misalignment effect RK Sharma, M Gupta, RS Gupta Superlattices and Microstructures 45 (3), 91-104, 2009 | 16 | 2009 |
| Optimization and Analysis of the Dual n/p-LDMOS Device S Poli, S Reggiani, RK Sharma, M Denison, E Gnani, A Gnudi, ... IEEE transactions on electron devices 59 (3), 745-753, 2011 | 15 | 2011 |
| Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect RK Sharma, R Gupta, M Gupta, RS Gupta Microelectronics Reliability 49 (7), 699-706, 2009 | 15 | 2009 |
| CMOS RF noise, scaling, and compact modeling for RFIC design A Antonopoulos, M Bucher, K Papathanasiou, N Makris, RK Sharma, ... 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 53-56, 2013 | 14 | 2013 |
| Charge-based modeling of long-channel symmetric double-gate junction FETs—Part I: Drain current and transconductances N Makris, F Jazaeri, JM Sallese, RK Sharma, M Bucher IEEE Transactions on Electron Devices 65 (7), 2744-2750, 2018 | 11 | 2018 |
| Ultra-low voltage drain-bulk connected MOS transistors in weak and moderate inversion A Dimakos, M Bucher, RK Sharma, I Chlis 2012 19th IEEE International Conference on Electronics, Circuits, and …, 2012 | 10 | 2012 |
| Analog/RF figures of merit of advanced DG MOSFETs RK Sharma, A Antonopoulos, N Mavredakis, M Bucher 2012 8th International Caribbean Conference on Devices, Circuits and Systems …, 2012 | 9 | 2012 |
| Optimization of 1700V 4H-SiC JBS diode parameters RK Sharma, P Hazdra, S Popelka, A Mihaila, H Bartolf Materials Science Forum 858, 782-785, 2016 | 6 | 2016 |
| Pulsed laser deposition of high-transparency molybdenum oxide thin films J Holovský, E Horynová, L Horák, K Ridzoňová, Z Remeš, L Landová, ... Vacuum 194, 110613, 2021 | 5 | 2021 |
| Effect of UV Irradiation on the Growth of ZnO: Er Nanorods and Their Intrinsic Defects M Buryi, K Ridzoňová, N Neykova, L Landová, F Hájek, V Babin, K Děcká, ... Chemosensors 11 (3), 156, 2023 | 4 | 2023 |
| The Effect of proton and carbon irradiation on 4H-SiC 1700V MPS diode characteristics P Hazdra, RK Sharma, S Popelka Materials Science Forum 821, 612-615, 2015 | 4 | 2015 |
Matthias BucherSchool of Electrical & Computer Engineering, Technical University of Crete (TUC), Chania, GreeceVerified email at electronics.tuc.gr
