| High-mobility InSe transistors: the role of surface oxides PH Ho, YR Chang, YC Chu, MK Li, CA Tsai, WH Wang, CH Ho, CW Chen, ... ACS nano 11 (7), 7362-7370, 2017 | 203 | 2017 |
| Surface oxidation doping to enhance photogenerated carrier separation efficiency for ultrahigh gain indium selenide photodetector YR Chang, PH Ho, CY Wen, TP Chen, SS Li, JY Wang, MK Li, CA Tsai, ... ACS Photonics 4 (11), 2930-2936, 2017 | 45 | 2017 |
| Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer. PH Ho, CH Chen, FY Shih, YR Chang, SS Li, WH Wang, MC Shih, ... Advanced Materials (Deerfield Beach, Fla.) 27 (47), 7809-7815, 2015 | 43 | 2015 |
| High-performance InSe transistors with ohmic contact enabled by nonrectifying barrier-type indium electrodes YT Huang, YH Chen, YJ Ho, SW Huang, YR Chang, K Watanabe, ... ACS applied materials & interfaces 10 (39), 33450-33456, 2018 | 41 | 2018 |
| Tunable photoinduced carrier transport of a black phosphorus transistor with extended stability using a light-sensitized encapsulated layer PH Ho, MK Li, R Sankar, FY Shih, SS Li, YR Chang, WH Wang, FC Chou, ... ACS Photonics 3 (6), 1102-1108, 2016 | 24 | 2016 |
| Atomic-step-induced screw-dislocation-driven spiral growth of SnS YR Chang, N Higashitarumizu, H Kawamoto, FH Chu, CJ Lee, ... Chemistry of Materials 33 (1), 186-194, 2020 | 17 | 2020 |
| Thermodynamic perspective on the oxidation of layered materials and surface oxide amelioration in 2D devices YR Chang, T Nishimura, K Nagashio ACS Applied Materials & Interfaces 13 (36), 43282-43289, 2021 | 11 | 2021 |
| Shift‐Current Photovoltaics Based on a Non‐Centrosymmetric Phase in In‐Plane Ferroelectric SnS YR Chang, R Nanae, S Kitamura, T Nishimura, H Wang, Y Xiang, ... Advanced Materials 35 (29), 2301172, 2023 | 6 | 2023 |
| Wavelength dependence of polarization-resolved second harmonic generation from ferroelectric SnS few layers R Moqbel, YR Chang, ZY Li, SH Kung, HY Cheng, CC Lee, K Nagashio, ... 2D Materials 10 (1), 015022, 2022 | 5 | 2022 |
| Performance Enhancement of SnS/h-BN Heterostructure p-Type FET via the Thermodynamically Predicted Surface Oxide Conversion Method YR Chang, T Nishimura, T Taniguchi, K Watanabe, K Nagashio ACS Applied Materials & Interfaces 14 (17), 19928-19937, 2022 | 4 | 2022 |
| Self-assembly nuclei with a preferred orientation at the extended hydrophobic surface toward textured growth of ZnO nanorods in aqueous chemical bath deposition CH Yu, CC Lo, KH Chen, YR Chang, CW Chen, CY Wen Nanotechnology 32 (17), 175603, 2021 | 2 | 2021 |
| Resonant exciton transfer in mixed-dimensional heterostructures for overcoming dimensional restrictions in optical processes N Fang, YR Chang, D Yamashita, S Fujii, M Maruyama, Y Gao, CF Fong, ... Nature communications 14 (1), 8152, 2023 | 1 | 2023 |
| Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures N Fang, YR Chang, S Fujii, D Yamashita, M Maruyama, Y Gao, CF Fong, ... Nature Communications 15 (1), 2871, 2024 | | 2024 |
| Self-aligned hybrid nanocavities using atomically thin materials CF Fong, D Yamashita, N Fang, S Fujii, YR Chang, T Taniguchi, ... arXiv preprint arXiv:2308.10566, 2023 | | 2023 |
| Mobility enhancement of p-SnS/h-BN heterostructure FET by Ti contact reaction YR Chang, T Taniguchi, K Watanabe, T Nishimura, K Nagashio JSAP Annual Meetings Extended Abstracts The 68th JSAP Spring Meeting 2021 …, 2021 | | 2021 |
| Atomic step induced spiral growth in PVD SnS YR Chang, N Higashitarumizu, H Kawamoto, T Nishimura, K Nagashio JSAP Annual Meetings Extended Abstracts The 81st JSAP Autumn Meeting 2020 …, 2020 | | 2020 |
| PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps YR Chang, H Kawamoto, N Higashitarumizu, T Nishimura, K Nagashio JSAP Annual Meetings Extended Abstracts The 67th JSAP Spring Meeting 2020 …, 2020 | | 2020 |
| Contact Engineering of High Performance Tri-layer Indium Selenide Field Effect Transistors: Metal Deposition Induced Surface Oxide Reduction YR Chang | | |
