Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates E Dimakis, U Jahn, M Ramsteiner, A Tahraoui, J Grandal, X Kong, ...
Nano letters 14 (5), 2604-2609, 2014
135 2014 Self-assisted nucleation and vapor–solid growth of InAs nanowires on bare Si (111) E Dimakis, J Lähnemann, U Jahn, S Breuer, M Hilse, L Geelhaar, ...
Crystal Growth & Design 11 (9), 4001-4008, 2011
116 2011 Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, T Kehagias, P Komninou, ...
Journal of applied physics 97 (11), 113520, 2005
111 2005 Enhanced near-green light emission from InGaN quantum wells by use of tunable plasmonic resonances in silver nanoparticle arrays J Henson, E Dimakis, J DiMaria, R Li, S Minissale, L Dal Negro, ...
Optics express 18 (20), 21322-21329, 2010
81 2010 Active nitrogen species dependence on radiofrequency plasma source operating parameters and their role in GaN growth E Iliopoulos, A Adikimenakis, E Dimakis, K Tsagaraki, G Konstantinidis, ...
Journal of crystal growth 278 (1-4), 426-430, 2005
81 2005 Growth and properties of near‐UV light emitting diodes based on InN/GaN quantum wells E Dimakis, AY Nikiforov, C Thomidis, L Zhou, DJ Smith, J Abell, CK Kao, ...
physica status solidi (a) 205 (5), 1070-1073, 2008
74 2008 Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch L Balaghi, G Bussone, R Grifone, R Hübner, J Grenzer, M Ghorbani-Asl, ...
Nature Communications 10 (1), 2793, 2019
72 2019 Biaxial strain and lattice constants of InN (0001) films grown by plasma-assisted molecular beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Adikimenakis, A Georgakilas
Applied physics letters 88 (19), 191918, 2006
72 2006 InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy E Iliopoulos, A Georgakilas, E Dimakis, A Adikimenakis, K Tsagaraki, ...
physica status solidi (a) 203 (1), 102-105, 2006
71 2006 Control of the polarity of molecular-beam-epitaxy-grown GaN thin films by the surface nitridation of S Mikroulis, A Georgakilas, A Kostopoulos, V Cimalla, E Dimakis, ...
Applied Physics Letters 80 (16), 2886-2888, 2002
67 2002 Physical model of InN growth on Ga-face GaN (0001) by molecular-beam epitaxy E Dimakis, E Iliopoulos, K Tsagaraki, A Georgakilas
Applied Physics Letters 86 (13), 133104, 2005
57 2005 Plasmon-enhanced light emission based on lattice resonances of silver nanocylinder arrays J Henson, J DiMaria, E Dimakis, TD Moustakas, R Paiella
Optics letters 37 (1), 79-81, 2012
51 2012 Energy gaps and bowing parameters of InAlGaN ternary and quaternary alloys M Androulidaki, NT Pelekanos, K Tsagaraki, E Dimakis, E Iliopoulos, ...
physica status solidi c 3 (6), 1866-1869, 2006
51 2006 Shell-doping of GaAs nanowires with Si for n-type conductivity E Dimakis, M Ramsteiner, A Tahraoui, H Riechert, L Geelhaar
Nano Research 5, 796-804, 2012
50 2012 Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy T Kehagias, A Delimitis, P Komninou, E Iliopoulos, E Dimakis, ...
Applied Physics Letters 86 (15), 151905, 2005
48 2005 The role of nucleation temperature in In-face InN-on-GaN (0001) growth by plasma-assisted molecular beam epitaxy E Dimakis, G Konstantinidis, K Tsagaraki, A Adikimenakis, E Iliopoulos, ...
Superlattices and Microstructures 36 (4-6), 497-507, 2004
45 2004 Plasmon enhanced light emission from InGaN quantum wells via coupling to chemically synthesized silver nanoparticles J Henson, JC Heckel, E Dimakis, J Abell, A Bhattacharyya, G Chumanov, ...
Applied Physics Letters 95 (15), 151109, 2009
42 2009 Structural properties of 10 μm thick InN grown on sapphire (0001) E Dimakis, JZ Domagala, A Delimitis, P Komninou, A Adikimenakis, ...
Superlattices and Microstructures 40 (4-6), 246-252, 2006
37 2006 Decoupling the Two Roles of Ga Droplets in the Self-Catalyzed Growth of GaAs Nanowires on SiOx T Tauchnitz, T Nurmamytov, R Hübner, M Engler, S Facsko, ...
Crystal Growth & Design 17 (10), 5276-5282, 2017
36 2017 Correlation of electrical and structural properties of single as-grown GaAs nanowires on Si (111) substrates G Bussone, H Schäfer-Eberwein, E Dimakis, A Biermanns, D Carbone, ...
Nano Letters 15 (2), 981-989, 2015
36 2015 