| Homoepitaxial gallium-nitride-based light emitting device and method for producing MP D'evelyn, NA Evers, SF Leboeuf, XA Cao, AP Zhang US Patent 7,053,413, 2006 | 489 | 2006 |
| Resonant cavity light emitting devices and associated method MP D'evelyn, XA Cao, A Zhang, SF Leboeuf, H Hong, DS Park, KJ Narang US Patent 7,582,498, 2009 | 343 | 2009 |
| Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes XA Cao, EB Stokes, PM Sandvik, SF LeBoeuf, J Kretchmer, D Walker IEEE Electron Device Letters 23 (9), 535-537, 2002 | 283 | 2002 |
| Electrical effects of plasma damage in XA Cao, SJ Pearton, AP Zhang, GT Dang, F Ren, RJ Shul, L Zhang, ... Applied physics letters 75 (17), 2569-2571, 1999 | 254 | 1999 |
| Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses XA Cao, PM Sandvik, SF LeBoeuf, SD Arthur Microelectronics Reliability 43 (12), 1987-1991, 2003 | 200 | 2003 |
| Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates MP D'evelyn, XA Cao, A Zhang, SF Leboeuf, H Hong, DS Park, KJ Narang US Patent 7,009,215, 2006 | 188 | 2006 |
| Depth and thermal stability of dry etch damage in GaN Schottky diodes XA Cao, H Cho, SJ Pearton, GT Dang, AP Zhang, F Ren, RJ Shul, ... Applied physics letters 75 (2), 232-234, 1999 | 181 | 1999 |
| High-power and reliable operation of vertical light-emitting diodes on bulk GaN XA Cao, SD Arthur Applied physics letters 85 (18), 3971-3973, 2004 | 177 | 2004 |
| Electrical characteristics of InGaN∕ GaN light-emitting diodes grown on GaN and sapphire substrates XA Cao, JM Teetsov, MP D’evelyn, DW Merfeld, CH Yan Applied Physics Letters 85 (1), 7-9, 2004 | 166 | 2004 |
| Flip-chip light emitting diode EB Stokes, MP D'evelyn, SE Weaver, PM Sandvik, AU Ebong, XA Cao, ... US Patent 7,119,372, 2006 | 165 | 2006 |
| Microstructural origin of leakage current in GaN/InGaN light-emitting diodes XA Cao, JA Teetsov, F Shahedipour-Sandvik, SD Arthur Journal of crystal growth 264 (1-3), 172-177, 2004 | 157 | 2004 |
| Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes Y Yang, XA Cao, C Yan IEEE Transactions on Electron Devices 55 (7), 1771-1775, 2008 | 149 | 2008 |
| Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes XA Cao, SF LeBoeuf, LB Rowland, CH Yan, H Liu Applied Physics Letters 82 (21), 3614-3616, 2003 | 148 | 2003 |
| Blue and near-ultraviolet light-emitting diodes on free-standing GaN substrates XA Cao, SF LeBoeuf, MP D’evelyn, SD Arthur, J Kretchmer, CH Yan, ... Applied physics letters 84 (21), 4313-4315, 2004 | 146 | 2004 |
| GaN electronics for high power, high temperature applications SJ Pearton, F Ren, AP Zhang, G Dang, XA Cao, KP Lee, H Cho, BP Gila, ... Materials Science and Engineering: B 82 (1-3), 227-231, 2001 | 130 | 2001 |
| High voltage GaN schottky rectifiers GT Dang, AP Zhang, F Ren, XA Cao, SJ Pearton, H Cho, J Han, JI Chyi, ... IEEE Transactions on Electron Devices 47 (4), 692-696, 2000 | 119 | 2000 |
| Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor J Han, AG Baca, RJ Shul, CG Willison, L Zhang, F Ren, AP Zhang, ... Applied physics letters 74 (18), 2702-2704, 1999 | 115 | 1999 |
| Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN XA Cao, SJ Pearton, G Dang, AP Zhang, F Ren, JM Van Hove Applied Physics Letters 75 (26), 4130-4132, 1999 | 111 | 1999 |
| Ultrahigh implant activation efficiency in GaN using a high-temperature rapid thermal process system XA Cao, CR Abernathy, RK Singh, SJ Pearton, M Fu, V Sarvepalli, ... Applied physics letters 73 (2), 229-231, 1998 | 93 | 1998 |
| Semiconductor devices and methods of manufacture XA Cao, S Arthur US Patent App. 11/263,163, 2007 | 89 | 2007 |
