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Dr. Aminul Islam
Dr. Aminul Islam
Associate Professor, Birla Institute of Technology (Deemed to be University), Mesra, Ranchi, India
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
Leakage characterization of 10T SRAM cell
A Islam, M Hasan
IEEE transactions on electron devices 59 (3), 631-638, 2012
1672012
Variation Tolerant Differential 8T SRAM Cell for Ultralow Power Application
S Pal, A Islam
IEEE, 2016
1082016
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell
A Islam, M Hasan
Microelectronics Reliability 52 (2), 405-411, 2012
1002012
9-T SRAM cell for reliable ultralow-power applications and solving multibit soft-error issue
S Pal, A Islam
IEEE Transactions on Device and Materials Reliability 16 (2), 172-182, 2016
792016
Optimized design of a 32-nm CNFET-based low-power ultrawideband CCII
A Imran, M Hasan, A Islam, SA Abbasi
IEEE transactions on Nanotechnology 11 (6), 1100-1109, 2012
612012
Variability aware low leakage reliable SRAM cell design technique
A Islam, M Hasan
Microelectronics reliability 52 (6), 1247-1252, 2012
492012
Circuit-level design technique to mitigate impact of process, voltage and temperature variations in complementary metal-oxide semiconductor full adder cells
V Dokania, A Islam
IET Circuits, Devices & Systems 9 (3), 204-212, 2015
392015
A 2.5 GHz Low Power, High- , Reliable Design of Active Bandpass Filter
V Kumar, R Mehra, A Islam
IEEE Transactions on Device and Materials Reliability 17 (1), 229-244, 2017
362017
Variation resilient subthreshold SRAM cell design technique
A Islam, M Hasan, T Arslan
International Journal of Electronics 99 (9), 1223-1237, 2012
332012
Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands
R Mehra, V Kumar, A Islam
AEU-International Journal of Electronics and Communications 83, 1-10, 2018
292018
Variability analysis and FinFET-based design of XOR and XNOR circuit
A Islam, A Imran, M Hasan
2011 2nd international conference on computer and communication technology …, 2011
272011
Optimization of SiC UMOSFET structure for improvement of breakdown voltage and ON-resistance
D Bharti, A Islam
IEEE Transactions on Electron Devices 65 (2), 615-621, 2017
262017
Variability analysis of 6t and 7t sram cell in sub-45nm technology
A Islam, M Hasan
IIUM Engineering Journal 12 (1), 13-30, 2011
252011
Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in Terms of Mobility and Subthreshold Slope
S Prasad, AK Dwivedi, A Islam
Journal of Computational Electronics, 1-9, 2016
222016
Design of 10T full adder cell for ultralow-power applications
V Dokania, R Verma, M Guduri, A Islam
Ain Shams Engineering Journal 9 (4), 2363-2372, 2018
202018
Variability immune finFET-based full adder design in subthreshold region
A Islam, MW Akram, M Hasan
2011 International Conference on Devices and Communications (ICDeCom), 1-5, 2011
202011
Comparative Study of CMOS-and FinFET-based 10T SRAM Cell in Subthreshold regime
S Pal, A Bhattacharya, A Islam
IEEE International Conference on Advanced Communications, Control and …, 2014
182014
Comparative Analysis of D Flip-Flops in Terms of Delay and its Variability
H Kumar, A Kumar, A Islam
IEEE Int. conf. on Reliability, Infocom technologies and Optimization …, 2015
162015
Robust subthreshold full adder design technique
A Islam, A Imran, M Hasan
2011 International Conference on Multimedia, Signal Processing and …, 2011
152011
Energy efficient and process tolerant full adder design in near threshold region using finfet
A Islam, MW Akram, A Imran, M Hasan
2010 International Symposium on Electronic System Design, 56-60, 2010
152010
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