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Dr. Aminul Islam
Dr. Aminul Islam
Associate Professor, Birla Institute of Technology (Deemed to be University), Mesra, Ranchi, India
Verified email at ieee.org - Homepage
Title
Cited by
Cited by
Year
Leakage characterization of 10T SRAM cell
A Islam, M Hasan
IEEE transactions on electron devices 59 (3), 631-638, 2012
1882012
Variation tolerant differential 8T SRAM cell for ultralow power applications
S Pal, A Islam
IEEE transactions on computer-aided design of integrated circuits and …, 2015
1372015
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell
A Islam, M Hasan
Microelectronics Reliability 52 (2), 405-411, 2012
1162012
9-T SRAM cell for reliable ultralow-power applications and solving multibit soft-error issue
S Pal, A Islam
IEEE Transactions on Device and Materials Reliability 16 (2), 172-182, 2016
932016
Optimized design of a 32-nm CNFET-based low-power ultrawideband CCII
A Imran, M Hasan, A Islam, SA Abbasi
IEEE transactions on Nanotechnology 11 (6), 1100-1109, 2012
702012
Variability aware low leakage reliable SRAM cell design technique
A Islam, M Hasan
Microelectronics reliability 52 (6), 1247-1252, 2012
622012
Characterization of half-select free write assist 9T SRAM cell
S Pal, S Bose, WH Ki, A Islam
IEEE transactions on electron devices 66 (11), 4745-4752, 2019
592019
Half-select-free low-power dynamic loop-cutting write assist SRAM cell for space applications
S Pal, S Bose, WH Ki, A Islam
IEEE Transactions on Electron Devices 67 (1), 80-89, 2019
502019
Highly stable low power radiation hardened memory-by-design SRAM for space applications
S Pal, DD Sri, WH Ki, A Islam
IEEE Transactions on Circuits and Systems II: Express Briefs 68 (6), 2147-2151, 2020
472020
A highly stable reliable SRAM cell design for low power applications
S Pal, S Bose, WH Ki, A Islam
Microelectronics Reliability 105, 113503, 2020
452020
Design of power-and variability-aware nonvolatile RRAM cell using memristor as a memory element
S Pal, S Bose, WH Ki, A Islam
IEEE Journal of the Electron Devices Society 7, 701-709, 2019
452019
Design of soft-error-aware SRAM with multi-node upset recovery for aerospace applications
S Pal, S Mohapatra, WH Ki, A Islam
IEEE Transactions on Circuits and Systems I: Regular Papers 68 (6), 2470-2480, 2021
432021
Transmission gate‐based 9T SRAM cell for variation resilient low power and reliable internet of things applications
S Pal, V Gupta, WH Ki, A Islam
IET Circuits, Devices & Systems 13 (5), 584-595, 2019
422019
A 2.5 GHz Low Power, High- , Reliable Design of Active Bandpass Filter
V Kumar, R Mehra, A Islam
IEEE Transactions on Device and Materials Reliability 17 (1), 229-244, 2017
422017
Soft-error resilient read decoupled SRAM with multi-node upset recovery for space applications
S Pal, DD Sri, WH Ki, A Islam
IEEE Transactions on Electron Devices 68 (5), 2246-2254, 2021
412021
Variation resilient subthreshold SRAM cell design technique
A Islam, M Hasan, T Arslan
International Journal of Electronics 99 (9), 1223-1237, 2012
412012
Circuit‐level design technique to mitigate impact of process, voltage and temperature variations in complementary metal‐oxide semiconductor full adder cells
V Dokania, A Islam
IET Circuits, Devices & Systems 9 (3), 204-212, 2015
402015
Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands
R Mehra, V Kumar, A Islam
AEU-International Journal of Electronics and Communications 83, 1-10, 2018
362018
Optimization of SiC UMOSFET structure for improvement of breakdown voltage and ON-resistance
D Bharti, A Islam
IEEE Transactions on Electron Devices 65 (2), 615-621, 2017
352017
Characterization of AlGaN/GaN and AlGaN/AlN/GaN HEMTs in terms of mobility and subthreshold slope
S Prasad, AK Dwivedi, A Islam
Journal of Computational Electronics 15 (1), 172-180, 2016
312016
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