| High-speed scalable silicon-MoS2 PN heterojunction photodetectors V Dhyani, S Das Scientific reports 7 (1), 1-9, 2017 | 138 | 2017 |
| Self-powered room temperature broadband infrared photodetector based on MoSe2/germanium heterojunction with 35 A/W responsivity at 1550 nm V Dhyani, M Das, W Uddin, PK Muduli, S Das Applied Physics Letters 114 (12), 2019 | 46 | 2019 |
| Optically Pumped Broadband Terahertz Modulator Based on Nanostructured PtSe2 Thin Films A Jakhar, P Kumar, A Moudgil, V Dhyani, S Das Advanced Optical Materials 8 (7), 1901714, 2020 | 42 | 2020 |
| Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das Nanotechnology 31 (45), 455208, 2020 | 40 | 2020 |
| High performance broadband photodetector based on MoS2/porous silicon heterojunction V Dhyani, P Dwivedi, S Dhanekar, S Das Applied Physics Letters 111 (19), 2017 | 34 | 2017 |
| High speed efficient ultraviolet photodetector based on 500 nm width multiple WO3 nanowires A Moudgil, V Dhyani, S Das Applied Physics Letters 113 (10), 2018 | 28 | 2018 |
| Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors JW John, V Dhyani, S Singh, A Jakhar, A Sarkar, S Das, SK Ray Nanotechnology 32 (31), 315205, 2021 | 23 | 2021 |
| Size-dependent photoresponse of germanium nanocrystals-metal oxide semiconductor photodetector V Dhyani, G Ahmad, N Kumar, S Das IEEE Transactions on Electron Devices 67 (2), 558-565, 2020 | 19 | 2020 |
| High speed MSM photodetector based on Ge nanowires network V Dhyani, S Das Semiconductor Science and Technology 32 (5), 055008, 2017 | 18 | 2017 |
| Integration of Nanometer-Thick 1T-TaS2 Films with Silicon for an Optically Driven Wide-Band Terahertz Modulator A Jakhar, P Kumar, S Husain, V Dhyani, S Das ACS Applied Nano Materials 3 (11), 10767-10777, 2020 | 16 | 2020 |
| High sensitivity silicon single nanowire junctionless phototransistor S Das, V Dhyani, YM Georgiev, DA Williams Applied Physics Letters 108 (6), 2016 | 15 | 2016 |
| Ultrahigh negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping JW John, V Dhyani, YM Georgiev, AS Gangnaik, S Biswas, JD Holmes, ... ACS Applied Electronic Materials 2 (7), 1934-1942, 2020 | 9 | 2020 |
| Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor V Dhyani, A Jakhar, S Das Journal of Physics D: Applied Physics 52 (42), 425103, 2019 | 9 | 2019 |
| Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET W Uddin, MS Pasha, V Dhyani, S Maity, S Das Semiconductor Science and Technology 34 (3), 035026, 2019 | 8 | 2019 |
| Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity A Jakhar, V Dhyani, S Das Semiconductor Science and Technology 35 (12), 125020, 2020 | 6 | 2020 |
| Bilayer MoS2 on silicon for higher terahertz amplitude modulation A Jakhar, P Kumar, S Husain, V Dhyani, A Chouksey, PK Rai, JS Rawat, ... Nano Express 2 (4), 040004, 2021 | 3 | 2021 |
| Low cost flexible 1.1 μm-1.6 μm photodetector fabricated by hydrothermal grown large area MoSe2 nanostructures V Dhyani, P Kumari, S Maity, S Das Optical Sensors 2019 11028, 396-404, 2019 | 3 | 2019 |
| Sidewall Transfer Patterning-Based Nano-Crystalline MoS2 Sensing Element for Stress and Optical MEMS Sensor V Rana, A Singh, A Ramesh, V Dhyani, S Das, P Singh 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems …, 2019 | 3 | 2019 |
| Black-arsenic/germanium-on-insulator heterostructure field effect transistor for ultrafast polarization sensitive short-wave infrared photodetection JW John, V Dhyani, A Jakhar, HK Sandhu, S Dewan, SK Ray, S Das IEEE Electron Device Letters 43 (9), 1495-1498, 2022 | 2 | 2022 |
| Photo-Induced Negative Differential Transconductance in Back-Gated Layered MoSe2/p-Ge Heterojunction Field Effect Transistors W Uddin, V Dhyani, G Ahmad, V Kumar, PK Muduli, S Das ACS Applied Electronic Materials 2 (6), 1567-1573, 2020 | 2 | 2020 |
