| Large negative differential resistance behavior in arsenene nanoribbons induced by vacant defects WH Xiao, F Xie, XJ Zhang, YF Chu, JP Liu, HY Wang, ZQ Fan, MQ Long, ... Physics Letters A 383 (14), 1629-1635, 2019 | 15 | 2019 |
| Stacking-and strain-dependent magnetism in Janus CrSTe bilayer QQ Li, WW Liu, ZK Ding, H Pan, XH Cao, WH Xiao, NN Luo, J Zeng, ... Applied Physics Letters 122 (12), 2023 | 5 | 2023 |
| Exceptionally high hole mobilities in monolayer group-IV monochalcogenides GeTe and SnTe WH Xiao, B Zeng, ZK Ding, H Pan, WW Liu, QQ Li, K Yang, N Luo, J Zeng, ... Applied Physics Letters 123 (1), 2023 | 4 | 2023 |
| XMoSiN2 (X= S, Se, Te): A novel 2D Janus semiconductor with ultra-high carrier mobility and excellent thermoelectric performance CH Ding, ZF Duan, ZK Ding, H Pan, J Wang, WH Xiao, WP Liu, QQ Li, ... Europhysics Letters 143 (1), 16002, 2023 | 1 | 2023 |
| GaInX3(X = S; Se; Te): ultra-low thermal conductivity and excellent thermoelectric performance ZF Duan, CH Ding, ZK Ding, WH Xiao, F Xie, NN Luo, J Zeng, LM Tang, ... Chinese Physics B, 2024 | | 2024 |
| High-mobility two-dimensional ( = Mo, W; = Si, Ge) family for transistors WH Xiao, K Yang, R D'Agosta, HR Xu, G Ouyang, G Zhou, KQ Chen, ... Physical Review B 109 (11), 115427, 2024 | | 2024 |
