| Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices G Mavrou, S Galata, P Tsipas, A Sotiropoulos, Y Panayiotatos, ... Journal of Applied Physics 103 (1), 2008 | 141 | 2008 |
| Interface engineering for Ge metal-oxide–semiconductor devices A Dimoulas, DP Brunco, S Ferrari, JW Seo, Y Panayiotatos, ... Thin Solid Films 515 (16), 6337-6343, 2007 | 105 | 2007 |
| Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates G Mavrou, P Tsipas, A Sotiropoulos, S Galata, Y Panayiotatos, ... Applied Physics Letters 93 (21), 2008 | 71 | 2008 |
| Germanium-induced stabilization of a very high-k zirconia phase in ZrO2/GeO2 gate stacks P Tsipas, SN Volkos, A Sotiropoulos, SF Galata, G Mavrou, D Tsoutsou, ... Applied physics letters 93 (8), 2008 | 70 | 2008 |
| The role of La surface chemistry in the passivation of Ge A Dimoulas, D Tsoutsou, Y Panayiotatos, A Sotiropoulos, G Mavrou, ... Applied Physics Letters 96 (1), 2010 | 61 | 2010 |
| Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition D Tsoutsou, G Apostolopoulos, SF Galata, P Tsipas, A Sotiropoulos, ... Journal of Applied Physics 106 (2), 2009 | 45 | 2009 |
| Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium D Tsoutsou, G Apostolopoulos, S Galata, P Tsipas, A Sotiropoulos, ... Microelectronic engineering 86 (7-9), 1626-1628, 2009 | 39 | 2009 |
| Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric G Mavrou, SF Galata, A Sotiropoulos, P Tsipas, Y Panayiotatos, ... Microelectronic engineering 84 (9-10), 2324-2327, 2007 | 34 | 2007 |
| Silicon-based light emitting devices MA Lourenço, M Milosavljevic, S Galata, MSA Siddiqui, G Shao, ... Vacuum 78 (2-4), 551-556, 2005 | 28 | 2005 |
| Atomic scale mechanism for the Ge-induced stabilization of the tetragonal, very high-κ, phase of ZrO2 F Boscherini, F D’Acapito, SF Galata, D Tsoutsou, A Dimoulas Applied Physics Letters 99 (12), 2011 | 26 | 2011 |
| Chemical stability of lanthanum germanate passivating layer on Ge upon high-k deposition: A photoemission study on the role of La in the interface chemistry D Tsoutsou, Y Panayiotatos, A Sotiropoulos, G Mavrou, E Golias, ... Journal of Applied Physics 108 (6), 2010 | 26 | 2010 |
| Anomalous charge trapping dynamics in cerium oxide grown on germanium substrate MS Rahman, EK Evangelou, A Dimoulas, G Mavrou, S Galata Journal of Applied Physics 103 (6), 2008 | 26 | 2008 |
| Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on germanium SF Galata, EK Evangelou, Y Panayiotatos, A Sotiropoulos, A Dimoulas Microelectronics Reliability 47 (4-5), 532-535, 2007 | 21 | 2007 |
| Sb-induced (1× 1) reconstruction on Si (001) JR Power, O Pulci, AI Shkrebtii, S Galata, A Astropekakis, K Hinrichs, ... Physical Review B 67 (11), 115315, 2003 | 16 | 2003 |
| Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate dielectric and the effect of postmetallization anneal SF Galata, G Mavrou, P Tsipas, A Sotiropoulos, Y Panayiotatos, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009 | 13 | 2009 |
| The effect of Se and Se/Al passivation on the oxidation of Ge D Tsoutsou, Y Panayiotatos, S Galata, A Sotiropoulos, G Mavrou, E Golias, ... Microelectronic engineering 88 (4), 407-410, 2011 | 10 | 2011 |
| High performance n+/p and p+/n germanium diodes at low-temperature activation annealing V Ioannou-Sougleridis, SF Galata, E Golias, T Speliotis, A Dimoulas, ... Microelectronic engineering 88 (3), 254-261, 2011 | 10 | 2011 |
| SILC decay in La2O3 gate dielectrics grown on Ge substrates subjected to constant voltage stress MS Rahman, EK Evangelou, II Androulidakis, A Dimoulas, G Mavrou, ... Solid-state electronics 54 (9), 979-984, 2010 | 10 | 2010 |
| Influence of Sn on the optical anisotropy of single-domain Si (001) A Astropekakis, JR Power, K Fleischer, N Esser, S Galata, ... Physical Review B 63 (8), 085317, 2001 | 7 | 2001 |
| Sulphur doped silicon light emitting diodes SF Galata, MA Lourenço, RM Gwilliam, KP Homewod Materials Science and Engineering: B 124, 435-439, 2005 | 6 | 2005 |
