Munaf Rahimo
Munaf Rahimo
MTAL GmbH
Verified email at mtal.ch
Title
Cited by
Cited by
Year
Freewheeling diode reverse-recovery failure modes in IGBT applications
MT Rahimo, NYA Shammas
IEEE Transactions on industry applications 37 (2), 661-670, 2001
1182001
The Bi-mode Insulated Gate Transistor (BiGT) A potential technology for higher power applications
M Rahimo, A Kopta, U Schlapbach, J Vobecky, R Schnell, S Klaka
2009 21st International Symposium on Power Semiconductor Devices & IC's, 283-286, 2009
1102009
Novel enhanced-planar IGBT technology rated up to 6.5 kV for lower losses and higher SOA capability
M Rahimo, A Kopta, S Linder
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
932006
4.5 kV press pack IGBT designed for ruggedness and reliability
S Eicher, M Rahimo, E Tsyplakov, D Schneider, A Kopta, U Schlapbach, ...
Conference Record of the 2004 IEEE Industry Applications Conference, 2004á…, 2004
872004
Switching-Self-Clamping-Mode “SSCM”, a breakthrough in SOA performance for high voltage IGBTs and Diodes
M Rahimo, A Kopta, S Eicher, U Schlapbach, S Linder
Proc. ISPSD 4, 437-440, 2004
822004
Characterization of a silicon IGBT and silicon carbide MOSFET cross-switch hybrid
M Rahimo, F Canales, RA Minamisawa, C Papadopoulos, U Vemulapati, ...
IEEE Transactions on Power Electronics 30 (9), 4638-4642, 2015
702015
Characterization of 6.5 kV IGBTs for high-power medium-frequency soft-switched applications
D Dujic, GK Steinke, M Bellini, M Rahimo, L Storasta, JK Steinke
IEEE Transactions on power electronics 29 (2), 906-919, 2013
692013
A high current 3300V module employing reverse conducting IGBTs setting a new benchmark in output power capability
M Rahimo, U Schlapbach, A Kopta, J Vobecky, D Schneider, ...
2008 20th International Symposium on Power Semiconductor Devices and IC's, 68-71, 2008
642008
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
A Kopta, M Rahimo
Proceedings. ISPSD'05. The 17th International Symposium on Powerá…, 2005
642005
Limitation of the short-circuit ruggedness of high-voltage IGBTs
A Kopta, M Rahimo, U Schlapbach, N Kaminski, D Silber
2009 21st International Symposium on Power Semiconductor Devices & IC's, 33-36, 2009
572009
A comparison of charge dynamics in the reverse-conducting RC IGBT and bi-mode insulated gate transistor BiGT
L Storasta, A Kopta, M Rahimo
2010 22nd International Symposium on Power Semiconductor Devices & IC'sá…, 2010
552010
The radial layout design concept for the bi-mode insulated gate transistor
L Storasta, M Rahimo, M Bellini, A Kopta, UR Vemulapati, N Kaminski
2011 IEEE 23rd International Symposium on Power Semiconductor Devices andá…, 2011
542011
1MW bi-directional DC solid state circuit breaker based on air cooled reverse blocking-IGCT
F Agostini, U Vemulapati, D Torresin, M Arnold, M Rahimo, A Antoniazzi, ...
2015 IEEE Electric Ship Technologies Symposium (ESTS), 287-292, 2015
512015
Optimization of the reverse recovery behavior of fast power diodes using injection efficiency and lifetime control techniques
MT Rahimo
EPE'97, 2.099-2.104, 1997
511997
Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
B Backlund, M Rahimo, S Klaka, J Siefken
2009 IEEE Power Electronics and Machines in Wind Applications, 1-6, 2009
492009
The corrugated P-base IGCT-a new benchmark for large area SQA scaling
T Wikstrom, T Stiasny, M Rahimo, D Cottet, P Streit
Proceedings of the 19th International Symposium on Power Semiconductorá…, 2007
492007
1200V IGBTs operating at 200░ C? An investigation on the potentials and the design constraints
U Schlapbach, M Rahimo, C Von Arx, A Mukhitdinov, S Linder
Proceedings of the 19th International Symposium on Power Semiconductorá…, 2007
472007
2.5 kV–6.5 kV industry standard IGBT modules setting a new benchmark in SOA capability
M Rahimo, A Kopta, R Schnell, U Schlapbach, R Zehringer, S Linder
Proc. PCIM, Nuremberg 200, 2004
472004
Recent progress and current issues in SiC semiconductor devices for power applications
CM Johnson, NG Wright, MJ Uren, KP Hilton, M Rahimo, DA Hinchley, ...
IEE Proceedings-Circuits, Devices and Systems 148 (2), 101-108, 2001
402001
Exploring the silicon design limits of thin wafer IGBT technology: The controlled punch through (CPT) IGBT
J Vobecky, M Rahimo, A Kopta, S Linder
2008 20th International Symposium on Power Semiconductor Devices and IC's, 76-79, 2008
392008
The system can't perform the operation now. Try again later.
Articles 1–20