Compact MOSFET models for VLSI design AB Bhattacharyya John Wiley & Sons, 2009 | 128 | 2009 |
Electrical Characteristics of Lithium‐Doped ZnO Films JK Srivastava, L Agarwal, AB Bhattacharyya Journal of The Electrochemical Society 136 (11), 3414-3417, 1989 | 44 | 1989 |
Matching properties of linear MOS capacitors R Singh, AB Bhattacharyya Solid-State Electronics 32 (4), 299-306, 1989 | 42 | 1989 |
Interface-state characteristics of GaN/GaAs MIS capacitors E Lakshmi, AB Bhattacharyya Solid-State Electronics 25 (8), 811-815, 1982 | 34 | 1982 |
SPICE simulation of surface acoustic wave interdigital transducers AB Bhattacharyya, S Tuli, S Majurndar Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on 42 …, 1995 | 29 | 1995 |
Effect of structure on properties of aromatic polyamides IK Varma, R Kumar, AB Bhattacharyya Journal of Applied Polymer Science 40 (3‐4), 531-542, 1990 | 27 | 1990 |
Extended-Sakurai-Newton MOSFET model for ultra-deep-submicrometer CMOS digital design N Chandra, A Kumar Yati, AB Bhattacharyya VLSI Design, 2009 22nd International Conference on, 247-252, 2009 | 26 | 2009 |
Delay-time sensitivity in linear RC tree N Jain, VC Prasad, AB Bhattacharyya Circuits and Systems, IEEE Transactions on 34 (4), 443-445, 1987 | 25 | 1987 |
The nature of intrinsic hole traps in thermal silicon dioxide L Manchanda, J Vasi, AB Bhattacharyya Journal of Applied Physics 52 (7), 4690-4696, 1981 | 25 | 1981 |
Modifield C-2C ladder voltage divider for application in PCM A/D convertors SP Singh, A Prabhakar, AB Bhattacharyya Electronics Letters 19 (19), 788-789, 1983 | 22* | 1983 |
C-2C ladder voltage dividers for application in all-MOS A/D convertors SP Singh, A Prabhakar, AB Bhattacharyya Electronics Letters 18 (12), 537-537, 1982 | 21 | 1982 |
Single-section lumped models for integrated circuit resistors AB Bhattacharyya, ML Gupta Solid-State Electronics 16 (12), 1506-1509, 1973 | 15 | 1973 |
Drift-field photovoltaic cell performance with bulk and surface recombinations† RB Gangadhar, AB Bhattacharyya International Journal of Electronics 25 (1), 17-26, 1968 | 15 | 1968 |
Switching properties of epitaxial planar transistors operating in saturation AB Bhattacharyya, A Srivastava, R Kumar Solid-State Electronics 18 (3), 277-286, 1975 | 14 | 1975 |
Approximation to impurity atom distribution from a two-step diffusion process AB Bhattacharyya, TN Basavaraj Electron Devices, IEEE Transactions on 20 (5), 509-510, 1973 | 14 | 1973 |
On-line extraction of model parameters of a long buried-channel MOSFET AB Bhattacharyya, P Ratnam, D Nagchoudhuri, SC Rustagi Electron Devices, IEEE Transactions on 32 (3), 545-550, 1985 | 13 | 1985 |
A micropower analog hearing aid on low voltage CMOS digital process AB Bhattacharyya, RS Rana, SK Guha, R Bahl, S Anand, MJ Zarabi, ... VLSI Design, 1996. Proceedings., Ninth International Conference on, 85-89, 1996 | 12 | 1996 |
Hole traps in thermal silicon dioxide introduced by chlorine L Manchanda, J Vasi, AB Bhattacharyya Applied Physics Letters 37 (8), 744-747, 1980 | 11 | 1980 |
Tunnel-diode transient analysis SL Sarnot, AB Bhattacharyya Electronics Letters 5 (12), 275-277, 1969 | 11 | 1969 |
Low-frequency gain-enhanced CMOS operational amplifier S Aggarwal, AB Bhattacharyya IEE Proceedings G (Circuits, Devices and Systems) 138 (2), 170-174, 1991 | 10 | 1991 |