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G.B. Stringfellow
G.B. Stringfellow
Verified email at coe.utah.edu
Title
Cited by
Cited by
Year
Organometallic vapor-phase epitaxy: theory and practice
GB Stringfellow
Elsevier, 1999
24641999
Solid phase immiscibility in GaInN
I Ho, GB Stringfellow
Applied Physics Letters 69 (18), 2701-2703, 1996
13291996
Calculation of ternary and quaternary III–V phase diagrams
GB Stringfellow
Journal of Crystal Growth 27, 21-34, 1974
5541974
Miscibility gaps in quaternary III/V alloys
GB Stringfellow
Journal of Crystal Growth 58 (1), 194-202, 1982
4371982
Photoluminescence of InSb, InAs, and InAsSb grown by organometallic vapor phase epitaxy
ZM Fang, KY Ma, DH Jaw, RM Cohen, GB Stringfellow
Journal of Applied Physics 67 (11), 7034-7039, 1990
4301990
The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystals
GB Stringfellow
Journal of Applied Physics 43 (8), 3455-3460, 1972
3731972
Materials issues in high-brightness light-emitting diodes
GB Stringfellow
Semiconductors and semimetals 48, 1-45, 1997
3501997
Effect of mismatch strain on band gap in III‐V semiconductors
CP Kuo, SK Vong, RM Cohen, GB Stringfellow
Journal of Applied Physics 57 (12), 5428-5432, 1985
3331985
Ordered structures in GaAs0. 5Sb0. 5 alloys grown by organometallic vapor phase epitaxy
HR Jen, MJ Cherng, GB Stringfellow
Applied physics letters 48 (23), 1603-1605, 1986
2701986
Calculation of ternary phase diagrams of III–V systems
GB Stringfellow
Journal of Physics and Chemistry of Solids 33 (3), 665-677, 1972
2331972
A critical appraisal of growth mechanisms in MOVPE
GB Stringfellow
Journal of Crystal Growth 68 (1), 111-122, 1984
2321984
Electronic processes in the photo-crystallization of vitreous selenium
J Dresner, GB Stringfellow
Journal of Physics and Chemistry of Solids 29 (2), 303-311, 1968
2261968
Microstructures produced during the epitaxial growth of InGaN alloys
GB Stringfellow
Journal of Crystal Growth 312 (6), 735-749, 2010
2192010
Fundamental issues in heteroepitaxy—A department of energy, council on materials science panel report
EG Bauer, BW Dodson, DJ Ehrlich, LC Feldman, CP Flynn, MW Geis, ...
Journal of Materials Research 5 (4), 852-894, 1990
2101990
Photoelectronic properties of ZnSe crystals
GB Stringfellow, RH Bube
Physical Review 171 (3), 903, 1968
2041968
Spinodal decomposition and clustering in III/V alloys
GB Stringfellow
Journal of Electronic Materials 11 (5), 903-918, 1982
2011982
Calculation of iii–v ternary phase diagrams: In-Ga-As and In-As-Sb
GB Stringfellow, PE Greene
Journal of Physics and Chemistry of Solids 30 (7), 1779-1791, 1969
1851969
Atomic ordering in III/V semiconductor alloys
GB Stringfellow, GS Chen
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991
1801991
Solubility of nitrogen in binary III–V systems
I Ho, GB Stringfellow
Journal of Crystal Growth 178 (1-2), 1-7, 1997
1791997
Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAs
CA Larsen, NI Buchan, GB Stringfellow
Applied physics letters 52 (6), 480-482, 1988
1751988
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