| The advanced unified defect model for Schottky barrier formation WE Spicer, Z Liliental‐Weber, E Weber, N Newman, T Kendelewicz, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1988 | 497 | 1988 |
| Can EDA combat the rise of electronic counterfeiting? F Koushanfar, S Fazzari, C McCants, W Bryson, M Sale, P Song, ... Proceedings of the 49th Annual Design Automation Conference, 133-138, 2012 | 96 | 2012 |
| The advanced unified defect model and its applications WE Spicer, T Kendelewicz, N Newman, R Cao, C McCants, K Miyano, ... Applied Surface Science 33, 1009-1029, 1988 | 77 | 1988 |
| Surface shifts in the In 4d and P 2p core-level spectra of InP(110) T Kendelewicz, PH Mahowald, KA Bertness, CE McCants, I Lindau, ... Physical Review B 36 (12), 6543, 1987 | 49 | 1987 |
| Experimental results examining various models of Schottky barrier formation on GaAs WE Spicer, N Newman, T Kendelewicz, WG Petro, MD Williams, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 45 | 1985 |
| Annealing of intimate Ag, Al, and Au–GaAs Schottky barriers N Newman, KK Chin, WG Petro, T Kendelewicz, MD Williams, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 3 (3 …, 1985 | 43 | 1985 |
| Kinetic study of Schottky barrier formation of In on GaAs (110) surface KK Chin, T Kendelewicz, C McCants, R Cao, K Miyano, I Lindau, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 4 (3 …, 1986 | 28 | 1986 |
| Photoenhancement mechanism for oxygen chemisorption on GaAs (110) using visible light KA Bertness, PH Mahowald, CE McCants, AK Wahi, T Kendelewicz, ... Applied Physics A 47, 219-228, 1988 | 26 | 1988 |
| Comparative uptake kinetics of N2O and O2 chemisorption on GaAs (110) KA Bertness, TT Chiang, CE McCants, PH Mahowald, AK Wahi, ... Surface science 185 (3), 544-558, 1987 | 25 | 1987 |
| Chemical and electrical properties at the annealed Ti/GaAs (110) interface CE McCants, T Kendelewicz, PH Mahowald, KA Bertness, MD Williams, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3 …, 1988 | 22 | 1988 |
| Cr on GaAs (110): The effect of electronegativity on the Schottky barrier height MD Williams, T Kendelewicz, RS List, N Newman, CE McCants, I Lindau, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985 | 18 | 1985 |
| Chemical and electronic properties of the Pt/GaAs (110) interface CE McCants, T Kendelewicz, KA Bertness, PH Mahowald, MD Williams, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 15 | 1987 |
| Temperature‐dependent pinning at the Al/n‐GaAs (110) interface T Kendelewicz, MD Williams, KK Chin, CE McCants, RS List, I Lindau, ... Applied physics letters 48 (14), 919-921, 1986 | 15 | 1986 |
| Chemical reaction and Schottky barrier formation at the Ti/InP (110) and Sn/InP (110) interfaces: Reactive versus nonreactive cases T Kendelewicz, PH Mahowald, CE McCants, KA Bartness, I Lindau, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 13 | 1987 |
| Metallization and Metal-Semiconductor Interfaces WE Spicer, R Cao, K Miyano, C McCants, TT Chiang, CJ Spindt, ... NATO Advance Study Institute, Series B Physics 195, 1989 | 11 | 1989 |
| Al on GaAs (110) revisited: Kinetic considerations MD Williams, KK Chin, CE McCants, PH Mahowald, WE Spicer Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1986 | 11 | 1986 |
| Fermi‐level movement at metal/HgCdTe contacts formed at low temperature GP Carey, AK Wahi, DJ Friedman, CE McCants, WE Spicer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989 | 9 | 1989 |
| Technologies for photonic sensor systems RF Leheny, CE McCants Proceedings of the IEEE 97 (6), 957-970, 2009 | 8 | 2009 |
| Chemical reactions at the Si/GaAs (110) and Si/InP (110) interfaces: Effects on valence‐band discontinuity measurements RS List, T Kendelewicz, MD Williams, CE McCants, I Lindau, WE Spicer Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6 (3 …, 1988 | 8 | 1988 |
| Valence‐band discontinuity at the Ge/InP (110) interface PH Mahowald, T Kendelewicz, KA Bertness, CE McCants, MD Williams, ... Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987 | 6 | 1987 |
