Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) K Hiramatsu, K Nishiyama, M Onishi, H Mizutani, M Narukawa, ...
Journal of Crystal Growth 221 (1-4), 316-326, 2000
551 2000 Recent progress in selective area growth and epitaxial lateral overgrowth of III‐nitrides: effects of reactor pressure in MOVPE growth K Hiramatsu, K Nishiyama, A Motogaito, H Miyake, Y Iyechika, T Maeda
physica status solidi (a) 176 (1), 535-543, 1999
380 1999 Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing H Miyake, CH Lin, K Tokoro, K Hiramatsu
Journal of Crystal Growth 456, 155-159, 2016
291 2016 AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire N Susilo, S Hagedorn, D Jaeger, H Miyake, U Zeimer, C Reich, ...
Applied Physics Letters 112 (4), 2018
206 2018 Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire H Miyake, G Nishio, S Suzuki, K Hiramatsu, H Fukuyama, J Kaur, ...
Applied Physics Express 9 (2), 025501, 2016
202 2016 Search for the Majorana nature of neutrinos in the inverted mass ordering region with KamLAND-Zen S Abe, S Asami, M Eizuka, S Futagi, A Gando, Y Gando, T Gima, A Goto, ...
Physical Review Letters 130 (5), 051801, 2023
168 2023 Effects of sodium on electrical properties in Cu2ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, Y Nose, MA Scarpulla, ...
Applied Physics Letters 104 (15), 2014
149 2014 Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy H Miyake, A Motogaito, K Hiramatsu
Japanese journal of applied physics 38 (9A), L1000, 1999
129 1999 Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0. 6Ga0. 4N films grown on AlN templates by … SF Chichibu, H Miyake, Y Ishikawa, M Tashiro, T Ohtomo, K Furusawa, ...
Journal of Applied Physics 113 (21), 2013
116 2013 Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0. 6Ga0. 4N/AlN/sapphire K Sato, S Yasue, K Yamada, S Tanaka, T Omori, S Ishizuka, S Teramura, ...
Applied Physics Express 13 (3), 031004, 2020
114 2020 Method for fabricating III-V group compound semiconductor K Hiramatsu, H Miyake, S Bohyama, T Maeda, Y Iyechika
US Patent 6,756,246, 2004
105 2004 Optical constants of and T Kawashima, S Adachi, H Miyake, K Sugiyama
Journal of applied physics 84 (9), 5202-5209, 1998
103 1998 Raman scattering spectroscopy of residual stresses in epitaxial AlN films S Yang, R Miyagawa, H Miyake, K Hiramatsu, H Harima
Applied physics express 4 (3), 031001, 2011
96 2011 Preparation of Cu2ZnSnS4 single crystals from Sn solutions A Nagaoka, K Yoshino, H Taniguchi, T Taniyama, H Miyake
Journal of Crystal Growth 341 (1), 38-41, 2012
95 2012 Improvement mechanism of sputtered AlN films by high-temperature annealing S Xiao, R Suzuki, H Miyake, S Harada, T Ujihara
Journal of Crystal Growth 502, 41-44, 2018
93 2018 Sharp band edge photoluminescence of high-purity single crystals K Yoshino, T Ikari, S Shirakata, H Miyake, K Hiramatsu
Applied Physics Letters 78 (6), 742-744, 2001
93 2001 Correlation between intrinsic defects and electrical properties in the high-quality Cu2ZnSnS4 single crystal A Nagaoka, H Miyake, T Taniyama, K Kakimoto, K Yoshino
Applied Physics Letters 103 (11), 2013
91 2013 Group III-V compound semiconductor and method of producing the same K Hiramatsu, H Miyake, T Maeda, Y Iyechika
US Patent 6,503,610, 2003
87 2003 Optical and crystalline properties of epitaxial-lateral-overgrown-GaN using tungsten mask by hydride vapor phase epitaxy HSH Sone, SNS Nambu, YKY Kawaguchi, MYM Yamaguchi, ...
Japanese journal of applied physics 38 (4A), L356, 1999
80 1999 Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures K Uesugi, Y Hayashi, K Shojiki, H Miyake
Applied Physics Express 12 (6), 065501, 2019
77 2019