Continuous wave operation of a mid-infrared semiconductor laser at room temperature M Beck, D Hofstetter, T Aellen, J Faist, U Oesterle, M Ilegems, E Gini, ...
science 295 (5553), 301-305, 2002
1187 2002 Infrared lattice vibrations and free-electron dispersion in GaN AS Barker Jr, M Ilegems
Physical Review B 7 (2), 743, 1973
940 1973 Absorption, reflectance, and luminescence of GaN epitaxial layers R Dingle, DD Sell, SE Stokowski, M Ilegems
Physical Review B 4 (4), 1211, 1971
762 1971 Measurement of cavity-polariton dispersion curve from angle-resolved photoluminescence experiments R Houdré, C Weisbuch, RP Stanley, U Oesterle, P Pellandini, M Ilegems
Physical Review Letters 73 (15), 2043, 1994
598 1994 Vacuum-field Rabi splitting in the presence of inhomogeneous broadening: Resolution of a homogeneous linewidth in an inhomogeneously broadened system R Houdré, RP Stanley, M Ilegems
Physical Review A 53 (4), 2711, 1996
386 1996 Donor-acceptor pair recombination in GaN R Dingle, M Ilegems
Solid State Communications 9 (3), 175-180, 1971
368 1971 Phase equilibria in ternary III–V systems MB Panish, M Ilegems
Progress in Solid State Chemistry 7, 39-83, 1972
343 1972 High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN JF Carlin, M Ilegems
Applied physics letters 83 (4), 668-670, 2003
328 2003 Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and Alx Ga1−x As M Ilegems
Journal of Applied Physics 48 (3), 1278-1287, 1977
306 1977 Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons R Houdré, JL Gibernon, P Pellandini, RP Stanley, U Oesterle, ...
Physical Review B 52 (11), 7810, 1995
290 1995 Room-temperature cavity polaritons in a semiconductor microcavity R Houdré, RP Stanley, U Oesterle, M Ilegems, C Weisbuch
Physical Review B 49 (23), 16761, 1994
289 1994 Electrical properties of n-type vapor-grown gallium nitride M Ilegems, HC Montgomery
Journal of Physics and Chemistry of Solids 34 (5), 885-895, 1973
288 1973 Study of electron traps in n ‐GaAs grown by molecular beam epitaxy DV Lang, AY Cho, AC Gossard, M Ilegems, W Wiegmann
Journal of Applied Physics 47 (6), 2558-2564, 1976
251 1976 Luminescence of Be‐and Mg‐doped GaN M Ilegems, R Dingle
Journal of Applied Physics 44 (9), 4234-4235, 1973
223 1973 Luminescence of Zn‐and Cd‐doped GaN M Ilegems, R Dingle, RA Logan
Journal of Applied Physics 43 (9), 3797-3800, 1972
222 1972 Far-infrared electroluminescence in a quantum cascade structure M Rochat, J Faist, M Beck, U Oesterle, M Ilegems
Applied physics letters 73 (25), 3724-3726, 1998
217 1998 Infrared Reflection Spectra of Mixed Crystals M Ilegems, GL Pearson
Physical Review B 1 (4), 1576, 1970
213 1970 Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy M Ilegems, R Dingle, LW Rupp Jr
Journal of Applied Physics 46 (7), 3059-3065, 1975
192 1975 Coupled semiconductor microcavities RP Stanley, R Houdre, U Oesterle, M Ilegems, C Weisbuch
Applied Physics Letters 65 (16), 2093-2095, 1994
188 1994 Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler D Hofstetter, M Beck, T Aellen, J Faist, U Oesterle, M Ilegems, E Gini, ...
Applied Physics Letters 78 (14), 1964-1966, 2001
180 2001