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Markus Jech
Markus Jech
UBIMET
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Cited by
Cited by
Year
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature communications 11 (1), 3385, 2020
3022020
Comphy—A compact-physics framework for unified modeling of BTI
G Rzepa, J Franco, B O’Sullivan, A Subirats, M Simicic, G Hellings, ...
Microelectronics Reliability 85, 49-65, 2018
1632018
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence
W Goes, Y Wimmer, AM El-Sayed, G Rzepa, M Jech, AL Shluger, ...
Microelectronics Reliability 87, 286-320, 2018
1232018
Understanding and modeling the temperature behavior of hot-carrier degradation in SiON nMOSFETs
S Tyaginov, M Jech, J Franco, P Sharma, B Kaczer, T Grasser
IEEE Electron Device Letters 37 (1), 84-87, 2015
802015
treatment of silicon-hydrogen bond rupture at interfaces
M Jech, AM El-Sayed, S Tyaginov, AL Shluger, T Grasser
Physical Review B 100 (19), 195302, 2019
402019
Efficient physical defect model applied to PBTI in high-κ stacks
G Rzepa, J Franco, A Subirats, M Jech, A Chasin, A Grill, M Waltl, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-11.1-XT-11.6, 2017
332017
Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology
A Makarov, SE Tyaginov, B Kaczer, M Jech, A Chasin, A Grill, G Hellings, ...
2017 IEEE International Electron Devices Meeting (IEDM), 13.1. 1-13.1. 4, 2017
312017
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental
B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ...
IEEE Transactions on Electron Devices 66 (1), 232-240, 2018
302018
Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and Peculiarities
M Jech, G Rott, H Reisinger, S Tyaginov, G Rzepa, A Grill, D Jabs, ...
IEEE Transactions on Electron Devices 67 (8), 3315-3322, 2020
222020
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part II: Theory
M Jech, B Ullmann, G Rzepa, S Tyaginov, A Grill, M Waltl, D Jabs, ...
IEEE Transactions on Electron Devices 66 (1), 241-248, 2018
222018
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n-and p-channel LDMOS devices
P Sharma, S Tyaginov, M Jech, Y Wimmer, F Rudolf, H Enichlmair, ...
Solid-State Electronics 115, 185-191, 2016
172016
The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects
B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017
152017
Applicability of Shockley–Read–Hall theory for interface states
B Ruch, M Jech, G Pobegen, T Grasser
IEEE Transactions on Electron Devices 68 (4), 2092-2097, 2021
132021
A compact physics analytical model for hot-carrier degradation
S Tyaginov, A Grill, M Vandemaele, T Grasser, G Hellings, A Makarov, ...
2020 IEEE International Reliability Physics Symposium (IRPS), 1-7, 2020
132020
Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture
C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ...
Microelectronics Reliability 139, 114801, 2022
122022
First–principles parameter–free modeling of n–and p–FET hot–carrier degradation
M Jech, S Tyaginov, B Kaczer, J Franco, D Jabs, C Jungemann, M Waltl, ...
2019 IEEE International Electron Devices Meeting (IEDM), 24.1. 1-24.1. 4, 2019
122019
Mapping of CMOS FET degradation in bias space—Application to dram peripheral devices
B Kaczer, J Franco, S Tyaginov, M Jech, G Rzepa, T Grasser, ...
Journal of Vacuum Science & Technology B 35 (1), 2017
122017
Quantum chemistry treatment of silicon-hydrogen bond rupture by nonequilibrium carriers in semiconductor devices
M Jech, AM El-Sayed, S Tyaginov, D Waldhör, F Bouakline, P Saalfrank, ...
Physical Review Applied 16 (1), 014026, 2021
102021
Bi-modal variability of nFinFET characteristics during hot-carrier stress: A modeling approach
A Makarov, B Kaczer, A Chasin, M Vandemaele, E Bury, M Jech, A Grill, ...
IEEE Electron Device Letters 40 (10), 1579-1582, 2019
102019
Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs
S Tyaginov, AM El-Sayed, A Makarov, A Chasin, H Arimura, ...
2019 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2019
92019
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