Simon Hammersley
Simon Hammersley
Research Associate, University of Manchester
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα manchester.ac.uk
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, TJ Badcock, ...
Journal of Applied Physics 111 (8), 083512, 2012
1122012
Effects of quantum well growth temperature on the recombination efficiency of InGaN/GaN multiple quantum wells that emit in the green and blue spectral regions
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
Appl. Phys. Lett. 107, 132106, 2015
382015
Investigation of unintentional indium incorporation into GaN barriers of InGaN/GaN quantum well structures
FCP Massabuau, MJ Davies, WE Blenkhorn, S Hammersley, MJ Kappers, ...
physica status solidi (b) 252 (5), 928-935, 2015
202015
Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells
MJ Davies, P Dawson, S Hammersley, T Zhu, MJ Kappers, CJ Humphreys, ...
Applied Physics Letters 108 (25), 252101, 2016
132016
Study of efficiency droop and carrier localisation in an InGaN/GaN quantum well structure
S Hammersley, TJ Badcock, D Watson‐Parris, MJ Godfrey, P Dawson, ...
physica status solidi c 8 (7‐8), 2194-2196, 2011
132011
Supplemental Blue LED Lighting Array to Improve the Signal Quality in Hyperspectral Imaging of Plants
AK Mahlein, S Hammersley, EC Oerke, HW Dehne, H Goldbach, B Grieve
Sensors 15 (6), 12834-12840, 2015
122015
A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers
MJ Davies, S Hammersley, FCP Massabuau, P Dawson, RA Oliver, ...
Journal of Applied Physics 119 (5), 055708, 2016
112016
Photoluminescence studies of cubic GaN epilayers
SA Church, S Hammersley, PW Mitchell, MJ Kappers, SL Sahonta, ...
physica status solidi (b) 254 (8), 1600733, 2017
102017
Carrier density dependent localization and consequences for efficiency droop in InGaN/GaN quantum well structures
TJ Badcock, S Hammersley, D Watson-Parris, P Dawson, MJ Godfrey, ...
Japanese Journal of Applied Physics 52 (8S), 08JK10, 2013
102013
Diatom frustules as a biomineralized scaffold for the growth of molybdenum disulfide nanosheets
EA Lewis, DJ Lewis, AA Tedstone, G Kime, S Hammersley, P Dawson, ...
Chemistry of Materials 28 (16), 5582-5586, 2016
92016
Localized multispectral crop imaging sensors: Engineering & validation of a cost effective plant stress and disease sensor
B Grieve, S Hammersley, AK Mahlein, EC Oerke, H Goldbach
2015 IEEE Sensors Applications Symposium (SAS), 1-6, 2015
82015
Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells
GM Christian, S Hammersley, MJ Davies, P Dawson, MJ Kappers, ...
physica status solidi (c) 13 (5‐6), 248-251, 2016
72016
Effect of QW growth temperature on the optical properties of blue and green InGaN/GaN QW structures
S Hammersley, MJ Kappers, FCP Massabuau, SL Sahonta, P Dawson, ...
physica status solidi (c) 13 (5‐6), 209-213, 2016
52016
On the origin of blue‐green emission from heteroepitaxial nonpolar a‐plane InGaN quantum wells
MJ Kappers, TJ Badcock, R Hao, MA Moram, S Hammersley, P Dawson, ...
physica status solidi c 9 (3‐4), 465-468, 2012
52012
Optical and structural properties of dislocations in InGaN
FCP Massabuau, MK Horton, E Pearce, S Hammersley, P Chen, ...
Journal of Applied Physics 125 (16), 165701, 2019
42019
Carrier dynamics in non‐polar GaN/AlGaN quantum wells intersected by basal‐plane stacking faults
TJ Badcock, S Hammersley, MJ Kappers, CJ Humphreys, P Dawson
physica status solidi c 7 (7‐8), 1894-1896, 2010
42010
Carrier distributions in InGaN/GaN light‐emitting diodes
S Hammersley, MJ Davies, P Dawson, RA Oliver, MJ Kappers, ...
physica status solidi (b) 252 (5), 890-894, 2015
32015
Processing online crop disease warning information via sensor networks using ISA ontologies
P Jackman, AJG Gray, A Brass, R Stevens, M Shi, D Scuffell, ...
Agricultural Engineering International: CIGR Journal 15 (3), 243-251, 2013
32013
Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength
GM Christian, S Schulz, S Hammersley, MJ Kappers, M Frentrup, ...
Japanese Journal of Applied Physics 58 (SC), SCCB09, 2019
22019
Optical studies of Group III-nitride semiconductors
S Hammersley
PQDT-UK & Ireland, 2012
22012
Δεν είναι δυνατή η εκτέλεση της ενέργειας από το σύστημα αυτή τη στιγμή. Προσπαθήστε ξανά αργότερα.
Άρθρα 1–20