| Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors S Maimon, E Finkman, G Bahir, SE Schacham, JM Garcia, PM Petroff Applied Physics Letters 73 (14), 2003-2005, 1998 | 362 | 1998 |
| Gain mechanism in GaN Schottky ultraviolet detectors O Katz, V Garber, B Meyler, G Bahir, J Salzman Applied physics letters 79 (10), 1417-1419, 2001 | 343 | 2001 |
| Passivation of mercury cadmium telluride surfaces Y Nemirovsky, G Bahir Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (2 …, 1989 | 202 | 1989 |
| Measured and calculated radiative lifetime and optical absorption of quantum structures E Berkowicz, D Gershoni, G Bahir, E Lakin, D Shilo, E Zolotoyabko, ... Physical Review B 61 (16), 10994, 2000 | 181 | 2000 |
| Near infrared quantum cascade detector in GaN∕ AlGaN∕ AlN heterostructures A Vardi, G Bahir, F Guillot, C Bougerol, E Monroy, SE Schacham, ... Applied Physics Letters 92 (1), 2008 | 164 | 2008 |
| Formation of InAs self-assembled quantum rings on InP T Raz, D Ritter, G Bahir Applied physics letters 82 (11), 1706-1708, 2003 | 147 | 2003 |
| Persistent photocurrent and surface trapping in GaN Schottky ultraviolet detectors O Katz, G Bahir, J Salzman Applied physics letters 84 (20), 4092-4094, 2004 | 144 | 2004 |
| GaN/AlGaN intersubband optoelectronic devices H Machhadani, P Kandaswamy, S Sakr, A Vardi, A Wirtmüller, L Nevou, ... New Journal of Physics 11 (12), 125023, 2009 | 119 | 2009 |
| Electron mobility in an AlGaN/GaN two-dimensional electron gas. I. Carrier concentration dependent mobility O Katz, A Horn, G Bahir, J Salzman IEEE Transactions on electron devices 50 (10), 2002-2008, 2003 | 113 | 2003 |
| A model for the trap-assisted tunneling mechanism in diffused np and implanted n/sup+/-p HgCdTe photodiodes D Rosenfeld, G Bahir IEEE Transactions on Electron Devices 39 (7), 1638-1645, 1992 | 110 | 1992 |
| Room temperature demonstration of GaN∕ AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength A Vardi, N Akopian, G Bahir, L Doyennette, M Tchernycheva, L Nevou, ... Applied physics letters 88 (14), 2006 | 97 | 2006 |
| On the extraction of linear and nonlinear physical parameters in nonideal diodes V Mikhelashvili, G Eisenstein, V Garber, S Fainleib, G Bahir, D Ritter, ... Journal of Applied Physics 85 (9), 6873-6883, 1999 | 93 | 1999 |
| Polarized front-illumination response in intraband quantum dot infrared photodetectors at 77 E Finkman, S Maimon, V Immer, G Bahir, SE Schacham, F Fossard, ... Physical Review B 63 (4), 045323, 2001 | 87 | 2001 |
| ION-BEAM MILLING EFFECT ON ELECTRICAL-PROPERTIES OF HG1-XCDXTE E Bahir, G, Finkman JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 7 (2 …, 1989 | 86 | 1989 |
| GaN/AlGaN waveguide quantum cascade photodetectors at λ≈ 1.55 μm with enhanced responsivity and∼ 40 GHz frequency bandwidth S Sakr, P Crozat, D Gacemi, Y Kotsar, A Pesach, P Quach, N Isac, ... Applied Physics Letters 102 (1), 2013 | 76 | 2013 |
| Structure of ion‐implanted and annealed Hg1− xCdxTe G Bahir, R Kalish Journal of Applied Physics 54 (6), 3129-3140, 1983 | 72 | 1983 |
| Anisotropy in detectivity of GaN Schottky ultraviolet detectors: Comparing lateral and vertical geometry O Katz, V Garber, B Meyler, G Bahir, J Salzman Applied physics letters 80 (3), 347-349, 2002 | 70 | 2002 |
| Electronic bound states in the continuum above (Ga, In)(As, N)/(Al, Ga) As quantum wells A Albo, D Fekete, G Bahir Physical Review B 85 (11), 115307, 2012 | 59 | 2012 |
| Approximations for carrier density in nonparabolic semiconductors V Ariel-Altschul, E Finkman, G Bahir IEEE transactions on electron devices 39 (6), 1312-1316, 1992 | 57 | 1992 |
| Optical evidence for lack of polarization in (112¯ 0) oriented GaN∕(AlGa) N quantum structures N Akopian, G Bahir, D Gershoni, MD Craven, JS Speck, SP DenBaars Applied Physics Letters 86 (20), 2005 | 56 | 2005 |
