| Influence of Scaling and Emitter Layout on the Thermal Behavior of Toward-THz SiGe: C HBTs V drAlessandro, G Sasso, N Rinaldi, K Aufinger IEEE, 2014 | 40 | 2014 |
| Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions GG Fischer, G Sasso Microelectronics Reliability, 2015 | 33 | 2015 |
| Analysis of the thermal behavior of AlGaN/GaN HEMTs S Russo, V d’Alessandro, M Costagliola, G Sasso, N Rinaldi Materials Science and Engineering: B 177 (15), 1343-1351, 2012 | 29 | 2012 |
| Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit T Jacquet, G Sasso, A Chakravorty, N Rinaldi, K Aufinger, T Zimmer, ... Microelectronics Reliability, 2015 | 22 | 2015 |
| Accurate mobility and energy relaxation time models for SiGe HBTs numerical simulation G Sasso, G Matz, C Jungemann, N Rinaldi International conference on simulation of semiconductor processes and …, 2009 | 21 | 2009 |
| Avalanche multiplication and pinch-in models for simulating electrical instability effects in SiGe HBTs G Sasso, M Costagliola, N Rinaldi Microelectronics Reliability 50 (9), 1577-1580, 2010 | 19 | 2010 |
| Analytical models of effective DOS, saturation velocity and high-field mobility for SiGe HBTs numerical simulation G Sasso, N Rinaldi, G Matz, C Jungemann Simulation of Semiconductor Processes and Devices (SISPAD), 2010 …, 2010 | 18 | 2010 |
| Advanced thermal resistance simulation of SiGe HBTs including backend cooling effect A Magnani, G Sasso, V d'Alessandro, L Codecasa, N Rinaldi, K Aufinger Thermal Investigations of ICs and Systems (THERMINIC), 2015 21st …, 2015 | 10 | 2015 |
| TCAD simulation and development within the European DOTFIVE project on 500GHz SiGe: C HBT's M Al-Sa'di, V d'Alessandro, S Fregonese, SM Hong, C Jungemann, ... Microwave Integrated Circuits Conference (EuMIC), 2010 European, 29-32, 2010 | 9 | 2010 |
| Experimental DC Extraction of the Base Resistance of Bipolar Transistors: Application to SiGe: C HBTs V d'Alessandro, G Sasso, N Rinaldi, K Aufinger IEEE, 0 | 9 | |
| Transport models and advanced numerical simulation of silicon-germanium heterojunction bipolar transistors G Sasso Università degli studi di Napoli Federico II, 2010 | 5 | 2010 |
| Evaluation and Modeling of Voltage Stress-Induced Hot Carrier Effects in High-Speed SiGe HBTs G Sasso, C Maneux, J Boeck, V d'Alessandro, K Aufinger, T Zimmer, ... Compound Semiconductor Integrated Circuit Symposium (CSICs), 2014 IEEE, 1-4, 2014 | 3 | 2014 |
| Degradation and recovery of high-speed SiGe HBTs under very high reverse EB stress conditions G Sasso, N Rinaldi, GG Fischer, B Heinemann Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014 IEEE, 41-44, 2014 | 3 | 2014 |
| A microcontroller-based pulse generator for isothermal I–V measurements M Costagliola, V d'Alessandro, G Sasso, N Rinaldi Microelectronics (ICM), 2012 24th International Conference on, 1-4, 2012 | 3 | 2012 |
| Impact of scaling on the DC/RF thermal behavior of SiGe HBTs for high-frequency applications G Sasso, V d’Alessandro, M Costagliola, S Russo, N Rinaldi Materials Science and Engineering: B 177 (15), 1233-1238, 2012 | 2 | 2012 |
| Scaling influence on the thermal behavior of toward-THz SiGe: C HBTs V d'Alessandro, G Sasso, N Rinaldi, K Aufinger Journal of Physics: Conference Series 494 (1), 012002, 2014 | 1 | 2014 |
| Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs G Sasso, V d'Alessandro, M Costagliola, N Rinaldi Microelectronics (ICM), 2012 24th International Conference on, 1-4, 2012 | 1 | 2012 |
| Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit T Zimmer, N Rinaldi, K Aufinger, C Maneux, T Jacquet, A Chakravorty, ... Elsevier Ltd, 2015 | | 2015 |
| close to the SOA limit T Jacquet, G Sasso, A Chakravorty, N Rinaldi, K Aufinger, T Zimmer, ... | | |
| Impact of Scaling on the DC/RF Thermal Behavior of Terahertz SiGe HBTs G Sasso, V d’Alessandro, M Costagliola, S Russo, C Jungemann, ... | | |
