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Houqiang Fu
Houqiang Fu
Assistant Professor, School of ECEE, Arizona State University
Verified email at asu.edu
Title
Cited by
Cited by
Year
Toward ultimate efficiency: Progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
Y Zhao, H Fu, GT Wang, S Nakamura
Advances in Optics and Photonics 10 (1), 246-308, 2018
1032018
A Comparative Study on the Electrical Properties of Vertical () and (010)-Ga2O3Schottky Barrier Diodes on EFG Single-Crystal Substrates
H Fu, H Chen, X Huang, I Baranowski, J Montes, TH Yang, Y Zhao
IEEE Transactions on Electron Devices 65 (8), 3507-3513, 2018
672018
Ultra-low turn-on voltage and on-resistance vertical GaN-on-GaN Schottky power diodes with high mobility double drift layers
H Fu, X Huang, H Chen, Z Lu, I Baranowski, Y Zhao
Applied Physics Letters 111 (15), 152102, 2017
672017
Demonstration of AlN Schottky barrier diodes with blocking voltage over 1 kV
H Fu, I Baranowski, X Huang, H Chen, Z Lu, J Montes, X Zhang, Y Zhao
IEEE Electron Device Letters 38 (9), 1286-1289, 2017
552017
Investigation of GaN-on-GaN vertical p-n diode with regrown p-GaN by metalorganic chemical vapor deposition
K Fu, H Fu, H Liu, SR Alugubelli, TH Yang, X Huang, H Chen, ...
Applied Physics Letters 113 (23), 233502, 2018
492018
Effect of buffer layer design on vertical GaN-on-GaN pn and Schottky power diodes
H Fu, X Huang, H Chen, Z Lu, X Zhang, Y Zhao
IEEE Electron Device Letters 38 (6), 763-766, 2017
492017
Demonstration of 1.27 kV Etch-Then-Regrow GaN - Junctions With Low Leakage for GaN Power Electronics
K Fu, H Fu, X Huang, H Chen, TH Yang, J Montes, C Yang, J Zhou, ...
IEEE Electron Device Letters 40 (11), 1728-1731, 2019
462019
High performance vertical GaN-on-GaN pn power diodes with hydrogen-plasma-based edge termination
H Fu, K Fu, X Huang, H Chen, I Baranowski, TH Yang, J Montes, Y Zhao
IEEE Electron Device Letters 39 (7), 1018-1021, 2018
452018
Active tracking system for visible light communication using a GaN-based micro-LED and NRZ-OOK
Z Lu, P Tian, H Chen, I Baranowski, H Fu, X Huang, J Montes, Y Fan, ...
Optics express 25 (15), 17971-17981, 2017
442017
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor
G Seryogin, F Alema, N Valente, H Fu, E Steinbrunner, AT Neal, S Mou, ...
Applied Physics Letters 117 (26), 262101, 2020
422020
Nonpolar and semipolar InGaN/GaN multiple-quantum-well solar cells with improved carrier collection efficiency
X Huang, H Fu, H Chen, X Zhang, Z Lu, J Montes, M Iza, SP DenBaars, ...
Applied Physics Letters 110 (16), 161105, 2017
372017
Analysis of low efficiency droop of semipolar InGaN quantum well light-emitting diodes by modified rate equation with weak phase-space filling effect
H Fu, Z Lu, Y Zhao
AIP Advances 6 (6), 065013, 2016
372016
Demonstration of mechanically exfoliated β-Ga2O3/GaN p-n heterojunction
J Montes, C Yang, H Fu, TH Yang, K Fu, H Chen, J Zhou, X Huang, ...
Applied Physics Letters 114 (16), 162103, 2019
342019
Low loss GaN waveguides at the visible spectral wavelengths for integrated photonics applications
H Chen, H Fu, X Huang, X Zhang, TH Yang, JA Montes, I Baranowski, ...
Optics express 25 (25), 31758-31773, 2017
342017
High voltage vertical GaN pn diodes with hydrogen-plasma based guard rings
H Fu, K Fu, SR Alugubelli, CY Cheng, X Huang, H Chen, TH Yang, ...
IEEE Electron Device Letters 41 (1), 127-130, 2019
322019
Crystal orientation dependent intersubband transition in semipolar AlGaN/GaN single quantum well for optoelectronic applications
H Fu, Z Lu, X Huang, H Chen, Y Zhao
Journal of Applied Physics 119 (17), 174502, 2016
322016
Study of Low-Efficiency Droop in Semipolar ( ) InGaN Light-Emitting Diodes by Time-Resolved Photoluminescence
H Fu, Z Lu, XH Zhao, YH Zhang, SP DenBaars, S Nakamura, Y Zhao
Journal of Display Technology 12 (7), 736-741, 2016
322016
Optical properties of highly polarized InGaN light-emitting diodes modified by plasmonic metallic grating
H Chen, H Fu, Z Lu, X Huang, Y Zhao
Optics express 24 (10), A856-A867, 2016
302016
Non-uniform Mg distribution in GaN epilayers grown on mesa structures for applications in GaN power electronics
H Liu, H Fu, K Fu, SR Alugubelli, PY Su, Y Zhao, FA Ponce
Applied Physics Letters 114 (8), 082102, 2019
292019
Characterizations of the nonlinear optical properties for (010) and (2 01) beta-phase gallium oxide
H Chen, H Fu, X Huang, JA Montes, TH Yang, I Baranowski, Y Zhao
Optics express 26 (4), 3938-3946, 2018
292018
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