Gwenhivir Wyatt-Moon
Gwenhivir Wyatt-Moon
Research Associate, University of Cambridge
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα
Παρατίθεται από
Παρατίθεται από
Small Molecule/Polymer Blend Organic Transistors with Hole Mobility Exceeding 13 cm2 V−1 s−1
AF Paterson, ND Treat, W Zhang, Z Fei, G Wyatt‐Moon, H Faber, ...
Advanced Materials 28 (35), 7791-7798, 2016
Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron …
I Isakov, H Faber, M Grell, G Wyatt‐Moon, N Pliatsikas, T Kehagias, ...
Advanced Functional Materials 27 (22), 1606407, 2017
Flexible diodes for radio frequency (RF) electronics: a materials perspective
J Semple, DG Georgiadou, G Wyatt-Moon, G Gelinck, TD Anthopoulos
Semiconductor Science and Technology 32 (12), 123002, 2017
Deep ultraviolet copper (I) thiocyanate (CuSCN) photodetectors based on coplanar nanogap electrodes fabricated via adhesion lithography
G Wyatt-Moon, DG Georgiadou, J Semple, TD Anthopoulos
ACS applied materials & interfaces 9 (48), 41965-41972, 2017
Semiconductor-free nonvolatile resistive switching memory devices based on metal nanogaps fabricated on flexible substrates via adhesion lithography
J Semple, G Wyatt-Moon, DG Georgiadou, MA McLachlan, ...
IEEE Transactions on Electron Devices 64 (5), 1973-1980, 2017
Large-area plastic nanogap electronics enabled by adhesion lithography
J Semple, DG Georgiadou, G Wyatt-Moon, M Yoon, A Seitkhan, E Yengel, ...
npj Flexible Electronics 2 (1), 1-10, 2018
Flexible nanogap polymer light-emitting diodes fabricated via adhesion lithography (a-Lith)
G Wyatt-Moon, DG Georgiadou, A Zoladek-Lemanczyk, FA Castro, ...
Journal of Physics: Materials 1 (1), 01LT01, 2018
Nanoscale large-area opto/electronics via adhesion lithography
G Wyatt-Moon
Imperial College London, 2018
Radio frequency diodes and circuits fabricated via adhesion lithography (Conference Presentation)
DG Georgiadou, J Semple, G Wyatt-Moon, TD Anthopoulos
Printed Memory and Circuits II 9945, 99450C, 2016
Air Stable Indium-Gallium-Zinc-Oxide Diodes With a 6.4 GHz Extrinsic Cutoff Frequency Fabricated Using Adhesion Lithography
G Wyatt-Moon, KM Niang, CB Rider, AJ Flewitt
IEEE Electron Device Letters 41 (1), 175-178, 2019
Adhesion lithography for large-area patterning of asymmetric nanogap electrodes
G Wyatt-Moon, A Flewitt
Δεν είναι δυνατή η εκτέλεση της ενέργειας από το σύστημα αυτή τη στιγμή. Προσπαθήστε ξανά αργότερα.
Άρθρα 1–11