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Dimitrios Tassis
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Determination of bulk states and interface states distributions in polycrystalline silicon thin‐film transistors
CA Dimitriadis, DH Tassis, NA Economou, AJ Lowe
Journal of applied physics 74 (4), 2919-2924, 1993
891993
A compact drain current model of short-channel cylindrical gate-all-around MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Semiconductor science and technology 24 (7), 075017, 2009
662009
Compact model of drain current in short-channel triple-gate FinFETs
N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ...
IEEE transactions on electron devices 59 (7), 1891-1898, 2012
652012
On the threshold voltage and channel conductance of polycrystalline silicon thin‐film transistors
CA Dimitriadis, DH Tassis
Journal of applied physics 79 (8), 4431-4437, 1996
611996
Analytical modelling for the current–voltage characteristics of undoped or lightly-doped symmetric double-gate MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
Microelectronic Engineering 87 (9), 1764-1768, 2010
542010
Characteristics of Schottky diodes deposited by reactive magnetron sputtering
CA Dimitriadis, JI Lee, P Patsalas, S Logothetidis, DH Tassis, J Brini, ...
Journal of applied physics 85 (8), 4238-4242, 1999
481999
Analytical unified threshold voltage model of short-channel FinFETs and implementation
N Fasarakis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, ...
Solid-state electronics 64 (1), 34-41, 2011
472011
Effect of localized interface charge on the threshold voltage of short-channel undoped symmetrical double-gate MOSFETs
EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, ...
IEEE transactions on Electron Devices 58 (2), 433-440, 2010
472010
Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise
EG Ioannidis, A Tsormpatzoglou, DH Tassis, CA Dimitriadis, F Templier, ...
Journal of Applied Physics 108 (10), 2010
472010
Infrared spectroscopic and electronic transport properties of polycrystalline semiconducting FeSi2 thin films
DH Tassis, CL Mitsas, TT Zorba, CA Dimitriadis, O Valassiades, ...
Journal of applied physics 80 (2), 962-968, 1996
471996
Compact modeling of nanoscale trapezoidal FinFETs
N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ...
IEEE Transactions on Electron Devices 61 (2), 324-332, 2013
442013
Analytical modeling of threshold voltage and interface ideality factor of nanoscale ultrathin body and buried oxide SOI MOSFETs with back gate control
N Fasarakis, T Karatsori, DH Tassis, CG Theodorou, F Andrieu, O Faynot, ...
IEEE Transactions on Electron Devices 61 (4), 969-975, 2014
432014
Analytical drain current compact model in the depletion operation region of short-channel triple-gate junctionless transistors
TA Oproglidis, A Tsormpatzoglou, DH Tassis, TA Karatsori, S Barraud, ...
IEEE Transactions on Electron Devices 64 (1), 66-72, 2016
332016
On-state drain current modeling of large-grain poly-Si TFTs based on carrier transport through latitudinal and longitudinal grain boundaries
AT Hatzopoulos, DH Tassis, NA Hastas, CA Dimitriadis, G Kamarinos
IEEE transactions on electron devices 52 (8), 1727-1733, 2005
332005
Output characteristics of short‐channel polycrystalline silicon thin‐film transistors
CA Dimitriadis, DH Tassis
Journal of applied physics 77 (5), 2177-2183, 1995
331995
The Meyer–Neldel rule in the conductivity of polycrystalline semiconducting films
DH Tassis, CA Dimitriadis, O Valassiades
Journal of applied physics 84 (5), 2960-2962, 1998
321998
Symmetrical unified compact model of short-channel double-gate MOSFETs
K Papathanasiou, CG Theodorou, A Tsormpatzoglou, DH Tassis, ...
Solid-state electronics 69, 55-61, 2012
312012
An analytical hot-carrier induced degradation model in polysilicon TFTs
AT Hatzopoulos, DH Tassis, NA Hastas, CA Dimitriadis, G Kamarinos
IEEE transactions on electron devices 52 (10), 2182-2187, 2005
292005
Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, G Ghibaudo, N Collaert, ...
Solid-state electronics 57 (1), 31-34, 2011
252011
Deep levels in silicon Schottky junctions with embedded arrays of β‐FeSi2 nanocrystallites
A Tsormpatzoglou, DH Tassis, CA Dimitriadis, L Dózsa, NG Galkin, ...
Journal of applied physics 100 (7), 2006
252006
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