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| Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates M Tapajna, N Killat, J Moereke, T Paskova, KR Evans, J Leach, X Li, ... IEEE electron device letters 33 (8), 1126-1128, 2012 | 21 | 2012 |
| Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability J Möreke, M Ťapajna, MJ Uren, Y Pei, UK Mishra, M Kuball physica status solidi (a) 209 (12), 2646-2652, 2012 | 17 | 2012 |
| Security substrates SD Marchant, P Howland, J Möreke US Patent 9,573,407, 2017 | 12 | 2017 |
| Liquid crystal electrography: Electric field mapping and detection of peak electric field strength in AlGaN/GaN high electron mobility transistors J Möreke, C Hodges, LLE Mears, MJ Uren, RM Richardson, M Kuball Microelectronics Reliability 54 (5), 921-925, 2014 | 10 | 2014 |
| Leakage Current Paths in Isolated AlGaN/GaN Heterostructures J Moereke, E Morvan, W Vandendaele, F Allain, A Torres, M Charles, ... IEEE Transactions of Semiconductor Manufacturing, 2016 | 9 | 2016 |
| Investigation of the GaN-on-GaAs interface for vertical power device applications J Möreke, MJ Uren, SV Novikov, CT Foxon, S Hosseini Vajargah, ... Journal of Applied Physics 116 (1), 2014 | 9 | 2014 |
| IEEE Trans. Electron Devices MJ Uren, J Moreke, M Kuball IEEE Trans. Electron Devices 64 (7), 2826-2834, 2017 | 6 | 2017 |
| Performance Limiting Leakage Current Across Ar-Implantation Isolation in AlGaN/GaN Structures for High Power Applications J Moereke, E Morvan, W Vandendaele, F Allain, A Torres, M Charles, ... CS ManTech 2016, 2016 | 1 | 2016 |
| Reliability limitations due to high electric fields of AIGaN/GaN high electron mobility transistors and novel device designs J Moreke University of Bristol, 2014 | 1 | 2014 |
| Energy from Tidal Creeks J Möreke Department of Physics, University of Bristol, 2010 | | 2010 |
