Follow
Wei-Ting Hsu
Wei-Ting Hsu
Department of Physics, National Tsing Hua University
Verified email at phys.nthu.edu.tw - Homepage
Title
Cited by
Cited by
Year
Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
YH Chang, W Zhang, Y Zhu, Y Han, J Pu, JK Chang, WT Hsu, JK Huang, ...
ACS nano 8 (8), 8582-8590, 2014
5472014
Bandgap tunability at single-layer molybdenum disulphide grain boundaries
YL Huang, Y Chen, W Zhang, SY Quek, CH Chen, LJ Li, WT Hsu, ...
Nature communications 6 (1), 6298, 2015
4152015
Second harmonic generation from artificially stacked transition metal dichalcogenide twisted bilayers
WT Hsu, ZA Zhao, LJ Li, CH Chen, MH Chiu, PS Chang, YC Chou, ...
ACS nano 8 (3), 2951-2958, 2014
4052014
Spectroscopic Signatures for Interlayer Coupling in MoS2–WSe2 van der Waals Stacking
MH Chiu, MY Li, W Zhang, WT Hsu, WH Chang, M Terrones, H Terrones, ...
ACS nano 8 (9), 9649-9656, 2014
3012014
Multidirection Piezoelectricity in Mono- and Multilayered Hexagonal α-In2Se3
F Xue, J Zhang, W Hu, WT Hsu, A Han, SF Leung, JK Huang, Y Wan, ...
ACS nano 12 (5), 4976-4983, 2018
1802018
Room‐Temperature Ferroelectricity in Hexagonally Layered α‐In2Se3 Nanoflakes down to the Monolayer Limit
F Xue, W Hu, KC Lee, LS Lu, J Zhang, HL Tang, A Han, WT Hsu, S Tu, ...
Advanced Functional Materials 28 (50), 1803738, 2018
1792018
Optically initialized robust valley-polarized holes in monolayer WSe2
WT Hsu, YL Chen, CH Chen, PS Liu, TH Hou, LJ Li, WH Chang
Nature communications 6 (1), 8963, 2015
1702015
Band Gap‐Tunable Molybdenum Sulfide Selenide Monolayer Alloy
SH Su, YT Hsu, YH Chang, MH Chiu, CL Hsu, WT Hsu, WH Chang, JH He, ...
small 10 (13), 2589-2594, 2014
1212014
Layered MoS2 grown on c ‐sapphire by pulsed laser deposition
YT Ho, CH Ma, TT Luong, LL Wei, TC Yen, WT Hsu, WH Chang, YC Chu, ...
physica status solidi (RRL)–Rapid Research Letters 9 (3), 187-191, 2015
1202015
Evidence of indirect gap in monolayer WSe2
WT Hsu, LS Lu, D Wang, JK Huang, MY Li, TR Chang, YC Chou, ...
Nature communications 8 (1), 929, 2017
1112017
Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys
SH Su, WT Hsu, CL Hsu, CH Chen, MH Chiu, YC Lin, WH Chang, ...
Frontiers in Energy Research 2, 27, 2014
1032014
Negative circular polarization emissions from WSe2/MoSe2 commensurate heterobilayers
WT Hsu, LS Lu, PH Wu, MH Lee, PJ Chen, PY Wu, YC Chou, HT Jeng, ...
Nature communications 9 (1), 1356, 2018
972018
Band alignment of 2D transition metal dichalcogenide heterojunctions
MH Chiu, WH Tseng, HL Tang, YH Chang, CH Chen, WT Hsu, WH Chang, ...
Advanced Functional Materials 27 (19), 1603756, 2017
752017
Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
A Aljarb, JH Fu, CC Hsu, CP Chuu, Y Wan, M Hakami, DR Naphade, ...
Nature Materials 19 (12), 1300-1306, 2020
742020
Phonon renormalization in reconstructed MoS2 moiré superlattices
J Quan, L Linhart, ML Lin, D Lee, J Zhu, CY Wang, WT Hsu, J Choi, ...
Nature materials 20 (8), 1100-1105, 2021
722021
Carrier Dynamics of Type-II InAs/GaAs Quantum Dots Covered by a Thin GaAs1-xSbx Layer
WH Chang, YA Liao, WT Hsu, MC Lee, PC Chiu, JI Chyi
Applied Physics Letters 93 (3), 033107, 2008
57*2008
Moiré potential impedes interlayer exciton diffusion in van der Waals heterostructures
J Choi, WT Hsu, LS Lu, L Sun, HY Cheng, MH Lee, J Quan, K Tran, ...
Science advances 6 (39), eaba8866, 2020
562020
Tailoring excitonic states of van der Waals bilayers through stacking configuration, band alignment, and valley spin
WT Hsu, BH Lin, LS Lu, MH Lee, MW Chu, LJ Li, W Yao, WH Chang, ...
Science advances 5 (12), eaax7407, 2019
542019
Effects of Thermal Annealing on the Emission Properties of Type-II InAs/GaAsSb Quantum Dots
YA Liao, WT Hsu, PC Chiu, JI Chyi, WH Chang
Applied Physics Letters 94 (5), 053101, 2009
522009
Dielectric impact on exciton binding energy and quasiparticle bandgap in monolayer WS2 and WSe2
WT Hsu, J Quan, CY Wang, LS Lu, M Campbell, WH Chang, LJ Li, X Li, ...
2D Materials 6 (2), 025028, 2019
412019
The system can't perform the operation now. Try again later.
Articles 1–20