Robert D Richards
Robert D Richards
Research Fellow, University of Sheffield
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα sheffield.ac.uk
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Localization effects and band gap of GaAsBi alloys
AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ...
physica status solidi (b) 251 (6), 1276-1281, 2014
702014
Effects of rapid thermal annealing on GaAs1-xBix alloys
AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ...
Applied Physics Letters 101 (1), 012106, 2012
592012
Experimental and theoretical studies of band gap alignment in GaAs1−xBix/GaAs quantum wells
R Kudrawiec, J Kopaczek, MP Polak, P Scharoch, M Gladysiewicz, ...
Journal of Applied Physics 116 (23), 233508, 2014
532014
Molecular beam epitaxy growth of GaAsBi using As2 and As4
RD Richards, F Bastiman, CJ Hunter, DF Mendes, AR Mohmad, ...
Journal of crystal growth 390, 120-124, 2014
472014
Absorption Characteristics ofDiodes in the Near-Infrared
CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ...
IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012
442012
Demonstration of InAsBi photoresponse beyond 3.5 μm
IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 171109, 2014
412014
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study
J Kopaczek, WM Linhart, M Baranowski, RD Richards, F Bastiman, ...
Semiconductor Science and Technology 30 (9), 094005, 2015
272015
Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
RD Richards, A Mellor, F Harun, JS Cheong, NP Hylton, T Wilson, ...
Solar Energy Materials and Solar Cells 172, 238-243, 2017
262017
Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy
L Dominguez, DF Reyes, F Bastiman, DL Sales, RD Richards, D Mendes, ...
Applied Physics Express 6 (11), 112601, 2013
232013
Assessing the nature of the distribution of localised states in bulk GaAsBi
T Wilson, NP Hylton, Y Harada, P Pearce, D Alonso-Álvarez, A Mellor, ...
Scientific Reports 8 (1), 1-10, 2018
212018
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization
RD Richards, F Bastiman, JS Roberts, R Beanland, D Walker, JPR David
Journal of Crystal Growth 425, 237-240, 2015
192015
Bismuth concentration inhomogeneity in GaAsBi bulk and quantum well structures
AR Mohmad, F Bastiman, CJ Hunter, F Harun, DF Reyes, DL Sales, ...
Semiconductor Science and Technology 30 (9), 094018, 2015
172015
Absorption properties of GaAsBi based p–i–n heterojunction diodes
Z Zhou, DF Mendes, RD Richards, F Bastiman, JPR David
Semiconductor Science and Technology 30 (9), 094004, 2015
142015
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Ł Gelczuk, J Kopaczek, TBO Rockett, RD Richards, R Kudrawiec
Scientific Reports 7 (1), 1-11, 2017
122017
Growth and structural characterization of GaAsBi/GaAs multiple quantum wells
RD Richards, F Bastiman, D Walker, R Beanland, JPR David
Semiconductor Science and Technology 30 (9), 094013, 2015
112015
Influence of growth conditions on the structural and opto-electronic quality of GaAsBi
TBO Rockett, RD Richards, Y Gu, F Harun, Y Liu, Z Zhou, JPR David
Journal of Crystal Growth 477, 139-143, 2017
102017
Telecommunication wavelength GaAsBi light emitting diodes
RD Richards, CJ Hunter, F Bastiman, AR Mohmad, JPR David
IET Optoelectronics 10 (2), 34-38, 2016
102016
Analysis of Bi distribution in epitaxial GaAsBi by aberration-corrected HAADF-STEM
N Baladés, DL Sales, M Herrera, CH Tan, Y Liu, RD Richards, SI Molina
Nanoscale research letters 13 (1), 125, 2018
92018
Optical and spin properties of localized and free excitons in GaBi x As1− x/GaAs multiple quantum wells
MAG Balanta, J Kopaczek, VO Gordo, BHB Santos, AD Rodrigues, ...
Journal of Physics D: Applied Physics 49 (35), 355104, 2016
92016
Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga (As, Bi) layers grown by molecular beam epitaxy
T Walther, RD Richards, F Bastiman
Crystal Research and Technology 50 (1), 38-42, 2015
52015
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