Παρακολούθηση
William Stanchina
William Stanchina
Professor Emeritus of Electrical and Computer Engineering, University of Pittsburgh
Η διεύθυνση ηλεκτρονικού ταχυδρομείου έχει επαληθευτεί στον τομέα pitt.edu
Τίτλος
Παρατίθεται από
Παρατίθεται από
Έτος
Maximum power point tracking using model reference adaptive control
R Khanna, Q Zhang, WE Stanchina, GF Reed, ZH Mao
IEEE Transactions on power Electronics 29 (3), 1490-1499, 2013
1542013
100+ GHz static divide-by-2 circuit in InP-DHBT technology
M Mokhtari, C Fields, RD Rajavel, M Sokolich, JF Jensen, WE Stanchina
IEEE Journal of Solid-State Circuits 38 (9), 1540-1544, 2003
812003
Effects of semiconducting and metallic single-walled carbon nanotubes on performance of bulk heterojunction organic solar cells
L Liu, WE Stanchina, G Li
Applied Physics Letters 94 (23), 2009
712009
An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs
WE Stanchina, JF Jensen, RH Walden, M Hafizi, HC Sun, T Liu, ...
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th …, 1995
701995
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
JF Jensen, M Hafizi, WE Stanchina, RA Metzger, DB Rensch
GaAs IC Symposium Technical Digest 1992, 101-104, 1992
701992
Simulation and design of InAlAs/InGaAs pnp heterojunction bipolar transistors
S Datta, S Shi, KP Roenker, MM Cahay, WE Stanchina
IEEE Transactions on Electron Devices 45 (8), 1634-1643, 1998
651998
InP-HBT chip-set for 40-Gb/s fiber optical communication systems operational at 3 V
M Mokhtari, T Swahn, RH Walden, WE Stanchina, M Kardos, T Juhola, ...
IEEE Journal of Solid-State Circuits 32 (9), 1371-1383, 1997
641997
An analytical model for evaluating the influence of device parasitics on Cdv/dt induced false turn-on in SiC MOSFETs
R Khanna, A Amrhein, W Stanchina, G Reed, ZH Mao
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and …, 2013
612013
AlInAs/GaInAs HBT IC Technology
JF Jensen, WE Stanchina, RA Metzger, DB Rensch, RF Lohr, RW Quen, ...
IEEE Journal of Solid-State Circuits 26 (3), 415-421, 1991
611991
High-gain transimpedance amplifier in InP-based HBT technology for the receiver in 40-Gb/s optical-fiber TDM links
J Mullrich, H Thurner, E Mullner, JF Jensen, WE Stanchina, M Kardos, ...
IEEE Journal of Solid-State Circuits 35 (9), 1260-1265, 2000
602000
39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology
M Hafizi, JF Jensen, RA Metzger, WE Stanchina, DB Rensch, YK Allen
IEEE Electron Device Letters 13 (12), 612-614, 1992
461992
Reliability of AlInAs/GaInAs heterojunction bipolar transistors
M Hafizi, WE Stanchina, RA Metzger, JF Jensen, F Williams
IEEE transactions on electron devices 40 (12), 2178-2185, 1993
451993
Smart grid education models for modern electric power system engineering curriculum
GF Reed, WE Stanchina
IEEE PES General Meeting, 1-5, 2010
442010
Temperature dependence of DC and RF characteristics of AlInAs/GaInAs HBT's
M Hafizi, WE Stanchina, RA Metzger, PA Macdonald, F Williams
IEEE transactions on electron devices 40 (9), 1583-1588, 1993
441993
A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology
M Sokolich, DP Docter, YK Brown, AR Kramer, JF Jensen, WE Stanchina, ...
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th …, 1998
421998
Self-aligned AlInAs-GaInAs heterojunction bipolar transistors and circuits
UK Mishra, JF Jensen, DB Rensch, AS Brown, WE Stanchina, RJ Trew, ...
IEEE electron device letters 10 (10), 467-469, 1989
421989
Indium phosphide ICs unleash the high-frequency spectrum
G Raghavan, M Sokolich, WE Stanchina
IEEE Spectrum 37 (10), 47-52, 2000
412000
The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors
M Hafizi, RA Metzger, WE Stanchina, DB Rensch, JF Jensen, WW Hooper
IEEE electron device letters 13 (3), 140-142, 1992
391992
High-speed multiplexers: A 50 Gb/s 4: 1 MUX in InP HBT technology
JP Mattia, R Pullela, G Georgieu, Y Baeyens, HS Tsai, YK Chen, ...
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st …, 1999
381999
Growth and characterization of low temperature AlInAs
RA Metzger, AS Brown, WE Stanchina, M Lui, RG Wilson, TV Kargodorian, ...
Journal of crystal growth 111 (1-4), 445-449, 1991
331991
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