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Oleg Penzin
Oleg Penzin
Verified email at synopsys.com
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Cited by
Year
Exploring the limits of stress-enhanced hole mobility
L Smith, V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, ...
IEEE Electron Device Letters 26 (9), 652-654, 2005
862005
MOSFET degradation kinetics and its simulation
O Penzin, A Haggag, W McMahon, E Lyumkis, K Hess
IEEE Transactions on Electron Devices 50 (6), 1445-1450, 2003
732003
Random dopant fluctuation modelling with the impedance field method
A Wettstein, O Penzin, E Lyumkis, W Fichtner
International Conference on Simulation of Semiconductor Processes and …, 2003
652003
14 nm FinFET stress engineering with epitaxial SiGe source/drain
M Choi, V Moroz, L Smith, O Penzin
2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012
382012
Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code
JL Leray, P Paillet, V Ferlet-Cavrois, C Tavernier, K Belhaddad, O Penzin
IEEE Transactions on Nuclear Science 47 (3), 620-626, 2000
292000
Kinetic velocity model to account for ballistic effects in the drift-diffusion transport approach
O Penzin, L Smith, A Erlebach, M Choi, KH Lee
IEEE Transactions on Electron Devices 64 (11), 4599-4606, 2017
252017
Nonparabolic multivalley quantum correction model for InGaAs double-gate structures
O Penzin, G Paasch, L Smith
IEEE transactions on electron devices 60 (7), 2246-2250, 2013
192013
Integration of the density gradient model into a general purpose device simulator
A Wettstein, O Penzin, E Lyumkis
VLSI Design 15, 751-759, 2002
192002
Extended Quantum Correction Model Applied to Six-BandValence Bands Near Silicon/Oxide Interfaces
O Penzin, G Paasch, FO Heinz, L Smith
IEEE transactions on electron devices 58 (6), 1614-1619, 2011
162011
SOI related simulation challenges with moment based BTE solvers
JL Egley, B Polsky, B Min, E Lyumkis, O Penzin, M Foisy
2000 International Conference on Simulation Semiconductor Processes and …, 2000
122000
On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors
B Polsky, O Penzin, KE Sayed, A Schenk, A Wettstein, W Fichtner
IEEE transactions on electron devices 52 (4), 500-506, 2005
112005
DESSIS 5.0 Manual
R Escoffier, W Fichtner, D Fokkema, E Lyumkis, O Penzin, B Polsky, ...
ISE Integrated Systems Engineering AG, CH-Zürich, 1996
111996
Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model
E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed, A Wettstein, ...
International conference on simulation of semiconductor processes and …, 2002
102002
Numerical analysis of electron tunneling through heterointerfaces and schottky barriers in heterostructure devices
E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd …, 2000
92000
Layer thickness and stress-dependent correction for InGaAs low-field mobility in TCAD applications
O Penzin, L Smith, A Erlebach, KH Lee
IEEE Transactions on Electron Devices 62 (2), 493-500, 2015
72015
Density gradient transport model for the simulations of ultrathin, ultrashort SOI under non-equilibrium conditions
E Sayed
2002 IEEE International SOI Conference, 143-144, 2002
62002
Quasi-ballistic drift-diffusion simulation of SiGe nanowire MOSFETs using the kinetic velocity model
KH Lee, A Erlebach, O Penzin, L Smith
IEEE Journal of the Electron Devices Society 9, 387-392, 2021
52021
Elec. Dev. Let
L Smith, V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, ...
Elec. Dev. Let., IEEE 26, 652-654, 2005
52005
Simulations of quantum transport in HEMT using density gradient model
E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed, A Wettstein, ...
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002
52002
Three-dimensional TCAD process and device simulations
I Avci, P Balasingam, K El Sayed, J Gharib, MD Johnson, K Kells, ...
2006 16th Biennial University/Government/Industry Microelectronics Symposium …, 2006
42006
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