Exploring the limits of stress-enhanced hole mobility L Smith, V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, ... IEEE Electron Device Letters 26 (9), 652-654, 2005 | 86 | 2005 |
MOSFET degradation kinetics and its simulation O Penzin, A Haggag, W McMahon, E Lyumkis, K Hess IEEE Transactions on Electron Devices 50 (6), 1445-1450, 2003 | 73 | 2003 |
Random dopant fluctuation modelling with the impedance field method A Wettstein, O Penzin, E Lyumkis, W Fichtner International Conference on Simulation of Semiconductor Processes and …, 2003 | 65 | 2003 |
14 nm FinFET stress engineering with epitaxial SiGe source/drain M Choi, V Moroz, L Smith, O Penzin 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM), 1-2, 2012 | 38 | 2012 |
Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code JL Leray, P Paillet, V Ferlet-Cavrois, C Tavernier, K Belhaddad, O Penzin IEEE Transactions on Nuclear Science 47 (3), 620-626, 2000 | 29 | 2000 |
Kinetic velocity model to account for ballistic effects in the drift-diffusion transport approach O Penzin, L Smith, A Erlebach, M Choi, KH Lee IEEE Transactions on Electron Devices 64 (11), 4599-4606, 2017 | 25 | 2017 |
Nonparabolic multivalley quantum correction model for InGaAs double-gate structures O Penzin, G Paasch, L Smith IEEE transactions on electron devices 60 (7), 2246-2250, 2013 | 19 | 2013 |
Integration of the density gradient model into a general purpose device simulator A Wettstein, O Penzin, E Lyumkis VLSI Design 15, 751-759, 2002 | 19 | 2002 |
Extended Quantum Correction Model Applied to Six-BandValence Bands Near Silicon/Oxide Interfaces O Penzin, G Paasch, FO Heinz, L Smith IEEE transactions on electron devices 58 (6), 1614-1619, 2011 | 16 | 2011 |
SOI related simulation challenges with moment based BTE solvers JL Egley, B Polsky, B Min, E Lyumkis, O Penzin, M Foisy 2000 International Conference on Simulation Semiconductor Processes and …, 2000 | 12 | 2000 |
On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors B Polsky, O Penzin, KE Sayed, A Schenk, A Wettstein, W Fichtner IEEE transactions on electron devices 52 (4), 500-506, 2005 | 11 | 2005 |
DESSIS 5.0 Manual R Escoffier, W Fichtner, D Fokkema, E Lyumkis, O Penzin, B Polsky, ... ISE Integrated Systems Engineering AG, CH-Zürich, 1996 | 11 | 1996 |
Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed, A Wettstein, ... International conference on simulation of semiconductor processes and …, 2002 | 10 | 2002 |
Numerical analysis of electron tunneling through heterointerfaces and schottky barriers in heterostructure devices E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd …, 2000 | 9 | 2000 |
Layer thickness and stress-dependent correction for InGaAs low-field mobility in TCAD applications O Penzin, L Smith, A Erlebach, KH Lee IEEE Transactions on Electron Devices 62 (2), 493-500, 2015 | 7 | 2015 |
Density gradient transport model for the simulations of ultrathin, ultrashort SOI under non-equilibrium conditions E Sayed 2002 IEEE International SOI Conference, 143-144, 2002 | 6 | 2002 |
Quasi-ballistic drift-diffusion simulation of SiGe nanowire MOSFETs using the kinetic velocity model KH Lee, A Erlebach, O Penzin, L Smith IEEE Journal of the Electron Devices Society 9, 387-392, 2021 | 5 | 2021 |
Elec. Dev. Let L Smith, V Moroz, G Eneman, P Verheyen, F Nouri, L Washington, ... Elec. Dev. Let., IEEE 26, 652-654, 2005 | 5 | 2005 |
Simulations of quantum transport in HEMT using density gradient model E Lyumkis, R Mickevicius, O Penzin, B Polsky, K El Sayed, A Wettstein, ... 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC …, 2002 | 5 | 2002 |
Three-dimensional TCAD process and device simulations I Avci, P Balasingam, K El Sayed, J Gharib, MD Johnson, K Kells, ... 2006 16th Biennial University/Government/Industry Microelectronics Symposium …, 2006 | 4 | 2006 |