| Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene P Kumar, BS Bhadoria, S Kumar, S Bhowmick, YS Chauhan, A Agarwal Physical Review B 93 (19), 195428, 2016 | 78 | 2016 |
| Anisotropic plasmons, excitons, and electron energy loss spectroscopy of phosphorene B Ghosh, P Kumar, A Thakur, YS Chauhan, S Bhowmick, A Agarwal Physical Review B 96 (3), 035422, 2017 | 68 | 2017 |
| Thickness and stacking dependent polarizability and dielectric constant of graphene–hexagonal boron nitride composite stacks P Kumar, YS Chauhan, A Agarwal, S Bhowmick The Journal of Physical Chemistry C 120 (31), 17620-17626, 2016 | 46 | 2016 |
| Spin-orbit-torque material exploration for maximum array-level read/write performance YC Liao, P Kumar, DC Mahendra, X Li, D Zhang, JP Wang, SX Wang, ... 2020 IEEE International Electron Devices Meeting (IEDM), 13.6. 1-13.6. 4, 2020 | 10 | 2020 |
| Atomistic study of band structure and transport in extremely thin channel InP MOSFETs T Dutta, P Kumar, P Rastogi, A Agarwal, YS Chauhan physica status solidi (a) 213 (4), 898-904, 2016 | 10 | 2016 |
| Design of a Compact Spin-Orbit-Torque-Based Ternary Content Addressable Memory S Narla, P Kumar, AF Laguna, D Reis, XS Hu, M Niemier, A Naeemi IEEE Transactions on Electron Devices, 2022 | 9 | 2022 |
| Benchmarking of spin–orbit torque vs spin-transfer torque devices P Kumar, A Naeemi Applied Physics Letters 121 (11), 112406, 2022 | 9 | 2022 |
| Modeling and design for magnetoelectric ternary content addressable memory (TCAM) S Narla, P Kumar, AF Laguna, D Reis, XS Hu, M Niemier, A Naeemi IEEE Journal on Exploratory Solid-State Computational Devices and Circuits 8 …, 2022 | 8 | 2022 |
| High Density Spin-Orbit Torque Magnetic Random Access Memory with Voltage-Controlled Magnetic Anisotropy / Spin-Transfer Torque Assist P Kumar, A Naeemi IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2022 | 3 | 2022 |
| A Drift-Diffusion Based Modeling and Optimization Framework for Nanoscale Spin-Orbit Torque Devices P Kumar, YC Liao, D Ralph, A Naeemi IEEE Transactions on Electron Devices, 2022 | 3 | 2022 |
| Performance Benchmarking of Spin-Orbit Torque Magnetic RAM (SOT-MRAM) for Deep Neural Network (DNN) Accelerators Y Luo, P Kumar, YC Liao, W Hwang, F Xue, W Tsai, SX Wang, A Naeemi, ... 2022 IEEE International Memory Workshop (IMW), 1-4, 2022 | 2 | 2022 |
| Crosslayer modeling and design for spin-orbit-torque and magnetoelectric memory arrays and compute-in-memory P Kumar, S Narla, YC Liao, A Naeemi SPIE, 2022 | 1 | 2022 |
| Impact of Technology Scaling and Back-end-of-the-line Technology Solutions on Magnetic Random-Access Memories P Kumar, S Narla, A Naeemi IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2024 | | 2024 |
| Modeling of spin-orbit torque (SOT) channel and high-density SOT magnetic random-access memory P Kumar, A Naeemi Spintronics XVI 12656, 171-182, 2023 | | 2023 |
| Investigation on the impact of spin current profile on the write time of SOT MRAMs NH Shazon, P Kumar, A Naeemi Spintronics XVI 12656, 294-305, 2023 | | 2023 |
| ii Special Topic on Oxide Electronics for Beyond CMOS Logic and Memory by DE Nikonov PAPERS SRS Raman, S Xie, JP Kulkarni, S Narla, P Kumar, AF Laguna, D Reis, ... | | |
Azad NaeemiProfessor of Electrical and Computer Engineering, Georgia Institute of TechnologyVerified email at gatech.edu
