Geoffrey Duggan
Geoffrey Duggan
Lumerical Inc.
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A new approach to high‐efficiency multi‐band‐gap solar cells
KWJ Barnham, G Duggan
Journal of Applied Physics 67 (7), 3490-3493, 1990
5941990
Unambiguous observation of the 2 s state of the light-and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structures
P Dawson, KJ Moore, G Duggan, HI Ralph, CTB Foxon
Physical Review B 34 (8), 6007, 1986
1641986
Short-period GaAs-AlAs superlattices: Optical properties and electronic structure
KJ Moore, G Duggan, P Dawson, CT Foxon
Physical Review B 38 (8), 5535, 1988
1431988
A critical review of heterojunction band offsets
G Duggan
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1985
1221985
Observations and calculations of the exciton binding energy in (In, Ga) As/GaAs strained-quantum-well heterostructures
KJ Moore, G Duggan, K Woodbridge, C Roberts
Physical Review B 41 (2), 1090, 1990
1131990
Envelope-function matching conditions for GaAs/(Al, Ga) As heterojunctions
I Galbraith, G Duggan
Physical Review B 38 (14), 10057, 1988
1071988
Free excitons in room-temperature photoluminescence of GaAs-Al x Ga 1− x As multiple quantum wells
P Dawson, G Duggan, HI Ralph, K Woodbridge
Physical Review B 28 (12), 7381, 1983
851983
Exciton binding energy and external-field-induced blue shift in double quantum wells
I Galbraith, G Duggan
Physical Review B 40 (8), 5515, 1989
841989
Exciton localization effects and heterojunction band offset in (Ga, In) P-(Al, Ga, In) P multiple quantum wells
MD Dawson, G Duggan
Physical Review B 47 (19), 12598, 1993
801993
Theory of heavy-hole magnetoexcitons in GaAs-(Al, Ga) As quantum-well heterostructures
G Duggan
Physical Review B 37 (5), 2759, 1988
741988
Γ-X mixing in the miniband structure of a GaAs/AlAs superlattice
NJ Pulsford, RJ Nicholas, P Dawson, KJ Moore, G Duggan, CTB Foxon
Physical review letters 63 (20), 2284, 1989
711989
Reappraisal of the band-edge discontinuities at the Al x Ga 1− x As-GaAs heterojunction
G Duggan, HI Ralph, KJ Moore
Physical Review B 32 (12), 8395, 1985
581985
Exciton binding energy in type-ii gaas-(al, ga) as quantum-well heterostructures
G Duggan, HI Ralph
Physical Review B 35 (8), 4152, 1987
561987
Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach
MF Pereira Jr, I Galbraith, SW Koch, G Duggan
Physical Review B 42 (11), 7084, 1990
521990
Positions of the sub-band minima in GaAs(AlGa) As quantum well heterostructures
P Dawson, G Duggan, HI Ralph, K Woodbridge, GW t'Hooft
Superlattices and Microstructures 1 (3), 231-235, 1985
451985
A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy
GB Scott, G Duggan, P Dawson, G Weimann
Journal of Applied Physics 52 (11), 6888-6894, 1981
441981
Miniband dispersion in (In, Ga) As-GaAs strained-layer superlattices
KJ Moore, G Duggan, A Raukema, K Woodbridge
Physical Review B 42 (2), 1326, 1990
431990
Experimental confirmation of a sum rule for room‐temperature electroabsorption in GaAs‐AlGaAs multiple quantum well structures
M Whitehead, G Parry, K Woodbridge, PJ Dobson, G Duggan
Applied physics letters 52 (5), 345-347, 1988
421988
III-nitride optoelectronic semiconductor device containing Lattice mismatched III-nitride semiconductor materials
G Duggan
US Patent 6,072,189, 2000
412000
The efficiency of photoluminescence of thin epitaxial semiconductors
G Duggan, GB Scott
Journal of Applied Physics 52 (1), 407-411, 1981
401981
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