| Ultrasensitive self-powered large area planar GaN UV-photodetector using reduced graphene oxide electrodes N Prakash, M Singh, G Kumar, A Barvat, K Anand, P Pal, SP Singh, ... Applied Physics Letters 109 (24), 2016 | 93 | 2016 |
| Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates A Barvat, N Prakash, B Satpati, SS Singha, G Kumar, DK Singh, A Dogra, ... Journal of Applied Physics 122 (1), 2017 | 45 | 2017 |
| Binary Multifunctional Ultrabroadband Self‐Powered g‐C3N4/Si Heterojunction High‐Performance Photodetector N Prakash, G Kumar, M Singh, A Barvat, P Pal, SP Singh, HK Singh, ... Advanced Optical Materials 6 (14), 1800191, 2018 | 40 | 2018 |
| Electronic structure of the PLD grown mixed phase MoS2/GaN interface and its thermal annealing effect A Barvat, N Prakash, G Kumar, DK Singh, A Dogra, SP Khanna, P Pal Current Applied Physics 18 (2), 170-177, 2018 | 20 | 2018 |
| Long‐Term, High‐Voltage, and High‐Temperature Stable Dual‐Mode, Low Dark Current Broadband Ultraviolet Photodetector Based on Solution‐Cast r‐GO on MBE‐Grown Highly Resistive GaN N Prakash, G Kumar, M Singh, SP Singh, B Satpati, SP Khanna, P Pal Advanced Optical Materials 7 (18), 1900340, 2019 | 19 | 2019 |
| Solution-Processed-2D on 3D Heterojunction UV–Visible Photodetector for Low-Light Applications G Kumar, N Prakash, M Singh, A Chakravorty, D Kabiraj, SP Singh, P Pal, ... ACS Applied Electronic Materials 1 (8), 1489-1497, 2019 | 19 | 2019 |
| Large bandgap reduced graphene oxide (rGO) based n-p+ heterojunction photodetector with improved NIR performance M Singh, G Kumar, N Prakash, SP Khanna, P Pal, SP Singh Semiconductor Science and Technology 33 (4), 045012, 2018 | 18 | 2018 |
| Mixed phase compositions of MoS2 ultra thin film grown by pulsed laser deposition A Barvat, N Prakash, DK Singh, A Dogra, SP Khanna, S Singh, P Pal Materials Today: Proceedings 5 (1), 2241-2245, 2018 | 11 | 2018 |
| Edge-contact large area hetero-structure fast photodetector utilizing two-dimensional r-GO on three-dimensional GaN material interface N Prakash, G Kumar, M Singh, SP Singh, P Pal, SP Khanna Sensors and Actuators A: Physical 303, 111720, 2020 | 8 | 2020 |
| The impact of RF-plasma power in carrier relaxation dynamics of unintentional doped GaN epitaxial layers grown by MBE N Prakash, K Anand, A Barvat, P Pal, DK Singh, M Jewariya, S Ragam, ... Optical Materials 54, 26-31, 2016 | 3 | 2016 |
| Exploration of trap levels in GaN and Al0. 2Ga0. 8N layers by temperature-dependent photoconductivity measurement N Prakash, G Kumar, A Barvat, K Anand, B Choursia, P Pal, SP Khanna Materials Today: Proceedings 5 (1), 2132-2138, 2018 | 2 | 2018 |
| Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE N Prakash, B Choursia, A Barvat, K Anand, SS Kushvaha, VN Singh, ... AIP Conference Proceedings 1731 (1), 2016 | | 2016 |
